TFT ion sensor and TFT ion sensor apparatus using the same

Patent metadata

Field	Value
Publication number	US-9664642-B2
Application number	US-201514671582-A
Country	US
Kind code	B2
Filing date	Mar 27, 2015
Priority date	Mar 28, 2014
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

The ion sensors using TFT or MOSFET are low in the measurement sensitivity so that it is difficult to detect an extremely small amount of sensing-target substance. A TFT ion sensor includes both a gate electrode (a silicon substrate) and a reference electrode, in which the electrostatic capacitance of a gate insulating film (a thermal oxide film) is set to be larger than the electrostatic capacitance of an ion sensitive insulating film. Therefore, it is possible to detect the concentration of ions, hormones, and the like in a sensing-target substance from the shift in the threshold voltage of the gate-source voltage to source-drain current property.

First claim

What is claimed is:

1. A thin film transistor (TFT) ion sensor, comprising:
a semiconductor active layer to which a source electrode and a drain electrode are connected;
a gate insulating film and a gate electrode provided on one of surfaces of the semiconductor active layer;
an ion sensitive insulating film provided on the other surface of the semiconductor active layer, an electrostatic capacitance per unit area of the ion sensitive insulating film being n-times (n>1) greater than an electrostatic capacitance per unit area of the gate insulating film;
a reference electrode provided at a position spatially isolated from the ion sensitive insulating film; and
a voltage detection unit configured to read out a potential difference between the source electrode and the gate electrode that is n-times greater than a potential difference between the source electrode and the gate electrode when the electrostatic capacitance per unit area of the ion sensitive insulating film is equivalent to the electrostatic capacitance per unit area of the gate insulating film.

2. The TFT ion sensor as claimed in claim 1 , wherein
the potential difference between the source electrode and the gate electrode is a potential difference acquired by multiplying a value of a ratio that is acquired by dividing the electrostatic capacitance per unit area of the ion sensitive insulating film by the electrostatic capacitance per unit area of the gate insulating film to a potential difference generated between the ion sensitive insulating film and a sensing-target substance that is disposed on the ion sensitive insulating film.

3. The TFT ion sensor as claimed in claim 1 , further comprising:
a voltage control unit which controls the potential difference between the source electrode and the gate electrode so that a constant current flows between the source electrode and the drain electrode.

4. The TFT ion sensor as claimed in claim 1 , wherein the gate electrode, the gate insulating film, the semiconductor active layer, the source electrode as well as the drain electrode, and the ion sensitive insulating film are provided in this order on a substrate.

5. The TFT ion sensor as claimed in claim 1 , wherein:
a thermal oxide film, the source electrode, the drain electrode, the semiconductor active layer, the gate insulating film, and the gate electrode are provided in this order on a silicon substrate; and
an opening part is provided in the silicon substrate so that the thermal oxide film located under the semiconductor active layer is exposed.

6. The TFT ion sensor as claimed in claim 1 , wherein:
the semiconductor active layer, the source electrode, the drain electrode, the gate insulating film, and the gate electrode are provided in this order on an insulating substrate; and
a recessed part is provided on the insulating substrate on an opposite side from the semiconductor active layer so that a thin part of the insulating substrate is exposed.

7. The TFT ion sensor as claimed in claim 1 , wherein the ion sensitive insulating film is a monolayer film formed with one selected from tantalum oxide, hafnium oxide, aluminum oxide, barium titanate, strontium titanate, and a silicon nitride, or a laminated film formed with two or more of tantalum oxide, hafnium oxide, aluminum oxide, barium titanate, strontium titanate, and a silicon nitride.

8. The TFT ion sensor as claimed in claim 1 , wherein an ion selective sensitive film exhibiting sensitivity for a specific ion is laminated on the ion sensitive insulating film.

9. The TFT ion sensor as claimed in claim 1 , wherein an enzyme which changes hydrogen ion concentration in vicinity of the ion sensitive insulating film by reacting with a substrate is solidified on the ion sensitive insulating film.

10. The TFT ion sensor as claimed in claim 1 , wherein protein, sugar, DNA, or RNA which exhibits sensitivity for a specific bio-substance and generates a potential change by a mutual action with the bio-substance is disposed on the ion sensitive insulating film.

11. The TFT ion sensor as claimed in claim 1 , wherein:
the gate insulating film and the ion sensitive insulating film are formed with substantially a same material, and
a film thickness of the gate insulating film is thicker than a film thickness of the ion sensitive insulating film.

12. The TFT ion sensor as claimed in claim 1 , wherein a relative dielectric constant of a substantial structural material of the ion sensitive insulating film is larger than a relative dielectric constant of a substantial structural material of the gate insulating film.

13. The TFT ion sensor as claimed in claim 1 , wherein hole accumulation does not occur in the semiconductor active layer.

14. The TFT ion sensor as claimed in claim 1 , wherein the semiconductor active layer is formed with an oxide semiconductor.

15. The TFT ion sensor as claimed in claim 1 , wherein a substantial structural material of the gate insulating film is a monolayer film formed with one selected from silicon oxide, silicon nitride, and aluminum oxide or a laminated film formed of two or more of silicon oxide, silicon nitride, and aluminum oxide.

16. The TFT ion sensor as claimed in claim 1 , wherein a defect density in an interface between the semiconductor active layer and the ion sensitive insulating film is suppressed to 1×10 21 cm −3 or less.

17. A thin film transistor (TFT) ion sensor comprising:
a semiconductor active layer to which a source electrode and a drain electrode are connected;
a gate insulating film and a gate electrode provided on one of surfaces of the semiconductor active layer;
an ion sensitive insulating film provided on the other surface of the semiconductor active layer, an electrostatic capacitance per unit area of the ion sensitive insulating film being n-times (n>1) greater than an electrostatic capacitance per unit area of the gate insulating film;
a reference electrode provided at a position spatially isolated from the ion sensitive insulating film; and
a current detection unit configured to read out a current flow in the source electrode or the drain electrode that is n-times greater than a current flow in the source electrode or the drain electrode when the electrostatic capacitance per unit area of the ion sensitive insulating film is equivalent to the electrostatic capacitance per unit area of the gate insulating film.

18. The TFT ion sensor as claimed in claim 17 , further comprising a current control unit which controls the current flown between the source electrode and the drain electrode so that the potential difference between the gate electrode and the source electrode becomes constant.

19. A thin film transistor (TFT) ion sensor apparatus, comprising:
a TFT ion sensor which comprises a semiconductor active layer to which a source electrode and a drain electrode are connected;
a gate insulating film and a gate electrode provided on one of surfaces of the semiconductor active layer;
an ion sensitive insulating film provided on the other surface of the semiconductor active layer, an electrostatic capacitance per unit area of the ion sensitive insulating film being n-times (n>1) greater than an electrostatic capacitance per unit area of the gate insulating film;
a reference electrode provided at a position spatially isolated from the ion sensitive insulating film; and
a detection circuit which
supplies a constant potential to the reference electrode by having a potential of the source electrode as a reference,
supplies a constant potential difference between

Assignees

• Nlt Technologies Ltd

Inventors

• Takechi Kazushige
• Haga Hiroshi
• Iwamatsu Shinnosuke
• Kobayashi Seiya
• Abe Yutaka
• Yahagi Toru

Classifications

• G01N27/4145

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title

• G01N27/414 Primary

  Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS · CPC title

• G01N27/4148

  Integrated circuits therefor, e.g. fabricated by CMOS processing · CPC title

• H01L29/7869

  Electricity · mapped topic

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title