Autotransformer-based impedance matching circuits and methods for radio-frequency applications

Patent metadata

Field	Value
Publication number	US-9660606-B2
Application number	US-201414263860-A
Country	US
Kind code	B2
Filing date	Apr 28, 2014
Priority date	Apr 29, 2013
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

Disclosed are devices and methods related to autotransformer-based impedance matching for radio-frequency (RF) applications. In some embodiments, an impedance matching device can include a primary metal trace and a secondary metal trace, each having a respective number of turns. Such metal traces can be interconnected to form an autotransformer with the primary metal trace and the secondary metal trace being in respective planes separated by a selected distance. Such an autotransformer can be utilized to, for example, facilitate impedance matching of an amplified RF signal from a power amplifier (PA). In some embodiments, the impedance matching device can be implemented as an integrated passive device (IPD) mountable on a packaging substrate. Such an IPD can be configured to allow stacking of another component on the IPD to yield a number of desirable features in products such as RF modules.

First claim

What is claimed is:

1. An impedance matching device for a radio-frequency (RF) power amplifier (PA), the device comprising:
a primary metal trace having one or more turns between a first end and a second end, the first end of the primary metal trace configured to be capable of being connected to a voltage source for the PA, the second end of the primary metal trace configured to be capable of being connected to an output of the PA;
a secondary metal trace having one or more turns between a first end and a second end, the first end of the secondary metal trace connected to the second end of the primary metal trace, the second end of the secondary metal trace configured to be capable of being connected to an output node, the primary metal trace and the secondary metal trace being in respective planes separated by a distance and being in an autotransformer configuration; and
a capacitance implemented between the first and second ends of the first metal trace to be electrically parallel with the first metal trace, the capacitance configured to substantially resonate out magnetizing inductance of the autotransformer.

2. The impedance matching device of claim 1 further comprising a first substrate configured to support the primary metal trace.

3. The impedance matching device of claim 1 further comprising an insulator layer implemented between the primary metal trace and the secondary metal trace, the insulator layer having a thickness selected to provide the separation distance.

4. The impedance matching device of claim 3 further comprising a conductive feature implemented through the insulator layer, the conductive feature configured to provide the connection between the first end of the secondary metal trace and the second end of the primary metal trace.

5. The impedance matching device of claim 2 further comprising a second substrate configured to support the secondary metal trace.

6. The impedance matching device of claim 1 wherein the impedance matching device is an integrated passive device (IPD).

7. The impedance matching device of claim 1 wherein the primary metal trace is wider than the secondary metal trace.

8. The impedance matching device of claim 1 wherein the primary metal trace is thicker than the secondary metal trace.

9. The impedance matching device of claim 8 wherein the primary metal trace is configured to provide passage of a DC current for the PA.

10. The impedance matching device of claim 9 wherein the primary metal trace is further configured to provide a low impedance path for an RF current.

11. The impedance matching device of claim 8 wherein the secondary metal trace and its separation distance with the primary metal trace are configured to provide strong coupling between the primary and secondary metal traces.

12. The impedance matching device of claim 1 further comprising one or more circuit elements configured to provide matching functionality on either or both sides of the autotransformer.

13. A method for fabricating an impedance matching device, the method comprising:
forming a primary metal trace, the primary metal trace having one or more turns between a first end and a second end, the first end of the primary metal trace configured to be capable of being connected to a voltage source for a power amplifier (PA), the second end of the primary metal trace configured to be capable of being connected to an output of the PA;
implementing a secondary metal trace relative to the primary metal trace, the secondary metal trace having one or more turns between a first end and a second end, the first end of the secondary metal trace connected to the second end of the primary metal trace, the second end of the secondary metal trace configured to be capable of being connected to an output node, the primary metal trace and the secondary metal trace being in respective planes separated by a distance and being in an autotransformer configuration; and
connecting a capacitance between the first and second ends of the first metal trace to be electrically parallel with the first metal trace, the capacitance configured to substantially resonate out magnetizing inductance of the autotransformer.

14. A radio-frequency (RF) module comprising:
a packaging substrate configured to receive a plurality of components;
a power amplifier (PA) die implemented on the packaging substrate, the PA die including an output node configured to provide an amplified RF signal; and
an impedance matching device implemented on the packaging substrate, the impedance matching device including a primary metal trace having one or more turns between a first end and a second end, the first end of the primary metal trace connected to a voltage source for the PA die, the second end of the primary metal trace connected to the output node of the PA die, the impedance matching device further including a secondary metal trace having one or more turns between a first end and a second end, the first end of the secondary metal trace connected to the second end of the primary metal trace, the second end of the secondary metal trace connected to an output node of the impedance matching device, the primary metal trace and the secondary metal trace being in respective planes separated by a distance and being in an autotransformer configuration, the impedance matching device further including a capacitance implemented between the first and second ends of the first metal trace to be electrically parallel with the first metal trace, the capacitance configured to substantially resonate out magnetizing inductance of the autotransformer.

15. The RF module of claim 14 wherein the impedance matching device is implemented as an integrated passive device (IPD).

16. The RF module of claim 15 wherein the IPD includes a substantially flat surface suitable for mounting of a component.

17. The RF module of claim 15 wherein the packaging substrate includes a laminate substrate.

18. The RF module of claim 17 wherein the IPD having the first and second metal traces allows the laminate substrate to have a reduced number of layers.

19. The RF module of claim 15 wherein the RF module is a front-end module (FEM).

Assignees

• Skyworks Solutions Inc

Inventors

• Lyalin Aleksey A
• Sun Weimin
• Muhlmeyer Nicholas Quinn
• Reisner Russ Alan

Classifications

• H10W72/5449

  not being orthogonal to a side surface of the chip, e.g. fan-out arrangements · CPC title

• H10W44/241

  for passive devices or passive elements · CPC title

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H03F3/195

  in integrated circuits · CPC title