US9660551B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9660551-B2 |
| Application number | US-201514935349-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 6, 2015 |
| Priority date | Nov 6, 2014 |
| Publication date | May 23, 2017 |
| Grant date | May 23, 2017 |
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The present application teaches, inter alia, methods and circuits for operating B-TRANs (double-base bidirectional bipolar junction transistors). Base drive circuits provide high-impedance drive to the base contact region on whichever side of the device is (instantaneously) operating as the collector. (B-TRANs, unlike other bipolar junction transistors, are controlled by applied voltage, not applied current.) Control signals operate preferred drive circuits, providing diode-mode turn-on and pre-turnoff operation, and a hard ON state with a low voltage drop (the “transistor-ON” state). In some (not necessarily all) preferred embodiments, a self-synchronizing rectifier circuit provides an adjustable low voltage for the gate drive circuit. Also, in some preferred embodiments, the base drive voltage used to drive the c-base region (on the collector side) is varied while monitoring the base current at that terminal, so that no more base current than necessary is applied. This solves the difficult challenge of optimizing base drive in B-TRANs.
Opening claim text (preview).
What is claimed is: 1. A method of operating a bidirectional bipolar transistor which has first and second first-conductivity-type emitter/collector regions in distinct locations separated by a bulk second-conductivity-type base region, and also has two distinct second-conductivity-type base contact regions which connect to the bulk base region in mutually separate locations, in respective proximity to first and second emitter/collector regions but not to each other, comprising the actions of: a) when low on-state resistance is desired, applying a base drive voltage to whichever of the base contact regions is then on the collector side of the device, relative to a collector voltage; and b) varying the base drive voltage while monitoring base current, to thereby find a target base drive voltage where differential conductance becomes detectable, above a present sensitivity threshold, with increasing base drive voltage; and operating the transistor at approximately the target base drive voltage. 2. The method of claim 1 , wherein the first and second first-conductivity-type emitter/collector regions are located on opposite surfaces of a second-conductivity-type semiconductor die. 3. The method of claim 1 , wherein the base current is initially measured with a base drive voltage of approximately zero. 4. The method of claim 1 , wherein the varying step is repeated multiple times which the device is on. 5. A system for power switching, comprising: a bidirectional bipolar transistor which has two first-conductivity-type emitter/collector regions separated by a bulk second-conductivity-type base region, and two distinct second-conductivity-type base contact regions which connect to the bulk base region in mutually separate locations; and a pair of transistor-mode drive circuits, separately connected to the first and second base contact regions respectively; wherein, during the transistor-ON state when low voltage drop is desired between the two emitter/collector regions, one of the drive circuits, depending on external voltage polarity, is configured to apply an adjustable voltage to a selected one of base contact regions, relative to a respective emitter/collector voltage and dither the adjustable voltage, to thereby find an operating point voltage where the differential conductance at the selected base contact becomes detectable, above a preset sensitivity threshold, with increasing applied voltage, and then keep the adjustable voltage at approximately the operating point voltage.
the devices being bipolar transistors (bipolar transistors having four or more electrodes H03K17/72) · CPC title
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