Generator device for the voltage supply of a motor vehicle

Patent metadata

Field	Value
Publication number	US-9660550-B2
Application number	US-201113990334-A
Country	US
Kind code	B2
Filing date	Oct 20, 2011
Priority date	Dec 9, 2010
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.

First claim

What is claimed is:

1. A generator device for voltage supply of a motor vehicle, comprising:
at least one rectifying element for rectifying an alternating voltage provided by a generator;
wherein the rectifying element has an n-channel MOS field-effect transistor in which a gate, a body area, and a source area are electrically fixedly connected to one another at a same node and in which the drain area is used as a cathode; the rectifying element has a conducting-state voltage which is lower than a forward voltage of a p-n diode; the rectifying element has the conducting-state voltage (UON) which is lower than 0.7 V when a current flows through the rectifying element at 500 A/cm2; and the rectifying element has a gate oxide thickness which is smaller than 20 nm.

2. The generator device as recited in claim 1 , wherein a doping of the body area is reduced to reduce a threshold voltage on a surface.

3. The generator device as recited in claim 1 , wherein a connection of source and gate contacts is monolithically integrated.

4. The generator device as recited in claim 1 , wherein the rectifying element has solderable front and back sides.

5. The generator device as recited in claim 1 , wherein the rectifying element has an integrated voltage limitation (load dump protection).

6. The generator device as recited in claim 5 , wherein the integrated voltage limitation takes place due to an avalanche breakdown of a body diode.

7. The generator device as recited in claim 1 , wherein the MOSFET is produced as a power MOSFET in planar technology or as a power MOSFET in trench technology.

8. The generator device as recited in claim 1 , wherein the generator device has multiple rectifying elements, each rectifying element being integrated into a bipolar press-in diode housing.

9. The generator device as recited in claim 1 , wherein elements for voltage limitation are connected in parallel to the rectifying elements.

10. The generator device as recited in claim 1 , wherein the generator device includes at least three windings and at least one rotable field winding.

11. The generator device as recited in claim 1 , wherein the generator device is a claw-pole generator.

12. The generator device as recited in claim 1 , further comprising:
at least two rectifying elements;
wherein the generator device includes at least one winding,
wherein an anode of a first one of the at least two rectifying elements is connected at a connection point to a cathode of a second one of the at least two rectifying elements, and
wherein the connection point is further connected to the at least one winding.

13. The generator device as recited in claim 12 , further comprising:
at least six rectifying elements;
wherein the generator device includes at least three windings,
wherein the at least six rectifying elements include three pairs of rectifying elements, and
wherein for each of the three pairs included in the at least six rectifying elements: an anode of a first one of the pair is connected at a connection point to a cathode of a second one of the pair, and the connection point is further connected to one of the at least three windings.

14. A generator device for voltage supply of a motor vehicle, comprising:
at least one rectifying element for rectifying an alternating voltage provided by a generator;
wherein the rectifying element has an n-channel MOS field-effect transistor in which a gate, a body area, and a source area are electrically fixedly connected to one another at a same node and in which the drain area is used as a cathode, and
wherein the rectifying element has a conducting-state voltage (UON) which is: (i) lower than a forward voltage of a p-n diode, and (ii) lower than 0.7 V when a current flows through the rectifying element at 500 A/cm2.

15. The generator device as recited in claim 14 , wherein the rectifying element has the conducting-state voltage which is lower than the forward voltage of the p-n diode.

16. The generator device as recited in claim 14 , wherein the rectifying element has the conducting-state voltage (UON) which is lower than 0.7 V when the current flows through the rectifying element at 500 A/cm2.

17. The generator device as recited in claim 14 , wherein the rectifying element has a gate oxide thickness which is smaller than 20 nm.

18. The generator device as recited in claim 14 , wherein a doping of the body area is reduced to reduce a threshold voltage on a surface.

Assignees

• Spitz Richard
• Goerlach Alfred
• Tolksdorf Carolin
• Ahlers Dirk
• Bonart Dietrich
• Bosch Gmbh Robert
• Infineon Technologies Ag

Inventors

• Spitz Richard
• Goerlach Alfred
• Tolksdorf Carolin
• Ahlers Dirk
• Bonart Dietrich

Classifications

• H01L29/1095

  Electricity · mapped topic

• H02M7/219 Primary

  in a bridge configuration · CPC title

• H01L2924/0002

  Electricity · mapped topic

• H01L2924/00

  Electricity · mapped topic

• H01L29/7802

  Electricity · mapped topic