Ultraviolet light emitting diode and method for producing same

Patent metadata

Field	Value
Publication number	US-9660140-B2
Application number	US-201314440342-A
Country	US
Kind code	B2
Filing date	Oct 15, 2013
Priority date	Nov 2, 2012
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

An ultraviolet LED having increased light extraction efficiency includes: a single crystal sapphire substrate on which an array of protruding portions are formed; an AlN crystal buffer layer formed on the sapphire substrate; and an ultraviolet light emitting layer, in contact with the buffer layer, formed into a layered stack including an n-type conductive layer, a recombination layer, and a p-type conductive layer, in order from the buffer layer. The buffer layer includes a pillar array section and an integration section wherein pillars in the array are connected with one another. Each pillar extends from a protruding portion of the sapphire substrate, in a direction normal to one surface thereof. The pillars are separated from one another in the plane of the surface by a gap G. Light emitted from the ultraviolet light emitting layer is extracted to the outside through the pillar array section and the sapphire substrate.

First claim

What is claimed is:

1. A method for manufacturing an ultraviolet light-emitting device comprising steps of:
preparing a single crystal sapphire substrate having an array of protruding portions on a surface thereof;
a buffer layer formation step of an AlN crystal on the surface using an MOVPE method with material gasses of TMAl (tri-methyl-aluminum) gas and ammonia gas;
forming an ultraviolet emission layer as a layered stack including, in order from the buffer layer, an n-type conductive layer, a recombination layer, and a p-type conductive layer;
forming a first electrode in electrical connection with the n-type conductive layer; and
forming a second electrode in electrical connection with the p-type conductive layer;
wherein the buffer layer formation step includes;
a crystal nucleus formation step that generates crystal nuclei of AlN;
an embedding step that fills the spacing among the seed crystal nuclei and forms a base crystal layer of AlN that is carried out subsequent to the crystal nucleus formation step, the embedding step including carrying out an ammonia pulse-flow method growth and a simultaneous supply growth at least one time each, the ammonia pulse-flow method being performed under an enhanced lateral growth condition, with which AlN crystal coherent with the seed crystal nuclei spreads in-plane direction of the single crystal sapphire substrate; and
a pillar growth and integration step for forming a pillar array section having an array of pillars that is carried out subsequent to the embedding step that fills the spacing among the seed crystal nuclei, such that each tapered pillar extends from the base crystal layer of AlN on one of the protruding portions and has a base and a tip, each tapered pillar being wider at the tip than at the base, and each tapered pillar being in contact with one of the protruding portions at the base and such that an integration is formed section by merging the pillars together with one another at the tip.

2. The method for manufacturing an ultraviolet light-emitting device according to claim 1 , further comprising
removing the sapphire substrate, subsequent to the ultraviolet emission layer growth step.

3. The method for manufacturing an ultraviolet light-emitting device according to claim 1 ,
wherein a V/III ratio denoting a group V to group III ratio in amount-of-substance for material gasses is set between 1.0 and 10 inclusive at least for a period in the pillar growth and integration step.

4. The method for manufacturing an ultraviolet light-emitting device according to claim 1 ,
wherein the embedding step includes repeating an ammonia pulse-flow growth method and a simultaneous supply growth method alternatingly plural times.

5. The method for manufacturing an ultraviolet light-emitting device according to claim 1 ,
wherein the buffer layer formation step further includes smoothing a surface of the integration section, subsequent to the pillar growth and integration step.

6. The method for manufacturing an ultraviolet light-emitting device according to claim 5 ,
wherein a V/III ratio denoting group V to group III ratio in amount-of-substance for material gasses is set between 1.0 and 10 inclusive during at least a certain period in the smoothing step.

Assignees

• Riken

Inventors

• Hirayama Hideki

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3242

  Structure · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/278

  Pendeoepitaxy · CPC title