Contactless damage inspection of perimeter region of semiconductor device

Patent metadata

Field	Value
Publication number	US-9658279-B2
Application number	US-201514923052-A
Country	US
Kind code	B2
Filing date	Oct 26, 2015
Priority date	Oct 30, 2014
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A power semiconductor device includes a semiconductor body. The semiconductor body includes an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region. The active semiconductor region has an active surface area, and the perimeter semiconductor region has a perimeter surface area. The power semiconductor device further includes a test structure for contactless testing of the perimeter semiconductor region. The test structure includes an electrically conductive path mounted on the perimeter surface area. The test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field.

First claim

What is claimed is:

1. A power semiconductor device, comprising:
a semiconductor body comprising an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region, the active semiconductor region having an active surface area and the perimeter semiconductor region having a perimeter surface area; and
a test structure for contactless testing of the perimeter semiconductor region, the test structure having a resonance frequency in an original configuration and comprising an electrically conductive path mounted on the perimeter surface area, wherein the test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field in the original configuration, the electromagnetic radio frequency test field being provided with a frequency range that includes the resonance frequency of the test structure in the original configuration,
wherein the test structure is configured to become detuned in an altered configuration of the test structure caused by mechanical damage in the perimeter semiconductor region, such that the test structure has a significantly different resonance frequency or no resonance frequency in the altered configuration.

2. The power semiconductor device of claim 1 , wherein the test structure is configured to produce a test signal based on the extracted energy, wherein the produced test signal is arranged to be detected by a test signal detector positioned remotely from the power semiconductor device.

3. The power semiconductor device of claim 1 wherein power semiconductor device further comprises an insulator electrically insulating the electrically conductive path from the perimeter semiconductor region and being at least partially included in the perimeter semiconductor region.

4. The power semiconductor device of claim 1 , wherein the electrically conductive path is a closed or an almost closed path that completely or almost completely surrounds the active surface area.

5. The power semiconductor device of claim 1 , wherein the electrically conductive path contacts the perimeter semiconductor region.

6. The power semiconductor device of claim 1 , wherein:
the test structure comprises a capacitor electrically coupled to the electrically conductive path; and
the test structure has at least one resonance frequency that is defined by an inductance of the electrically conductive path and a capacitance of the capacitor.

7. The power semiconductor device of claim 6 , wherein the capacitor comprises a first electrode and a second electrode, the first electrode and the second electrode being mounted on the perimeter surface area, and wherein an electric field between the first electrode and the second electrode extends into the perimeter semiconductor region.

8. The power semiconductor device of claim 7 , wherein the electrically conductive path, the first electrode and the second electrode form a monolithic component that is mounted on the perimeter surface area.

9. The power semiconductor device of claim 7 , wherein the perimeter semiconductor region includes a well, the well comprising charge carriers of a first conductivity type, and wherein the electric field between the first electrode and the second electrode extends into the well.

10. The power semiconductor device of claim 9 , wherein the well includes a first zone and a second zone, the first zone and the second zone each comprising charge carriers of a second conductivity type, and wherein the first zone contacts the first electrode and the second zone contacts the second electrode.

11. The power semiconductor device of claim 1 , wherein the perimeter semiconductor region comprises at least one pn-junction, the at least one pn-junction being electrically coupled to the test structure.

12. The power semiconductor device of claim 1 , wherein the test structure comprises a diode, the diode being electrically coupled to the electrically conductive path and configured to convert the extracted energy into a detectable light signal in the original configuration, and to produce a weak light signal or no light signal in the altered configuration.

13. The power semiconductor device of claim 1 , wherein the electrically conductive path comprises a first end and a second end spaced apart from each other, and wherein both the first end and the second end are electrically coupled to a bulk region of the power semiconductor device.

14. The power semiconductor device of claim 1 , wherein the electrically conductive path is configured to convert the extracted energy into a detectable heat signal resulting from high ohmic losses in the original configuration, and to produce reduced ohmic losses or no ohmic losses in the altered configuration.

15. The power semiconductor device of claim 1 , further comprising a first load contact structure mounted on the active surface area and electrically insulated from the test structure, wherein the first load contact structure is configured to feed a load current into the active semiconductor region.

16. The power semiconductor device of claim 1 , wherein the electromagnetic radio frequency test field has a frequency that is at least twice as high as a frequency of an operating frequency range of the power semiconductor device.

17. The power semiconductor device of rein the semiconductor body comprises silicon carbide.

18. The power semiconductor device of claim 1 , wherein the test structure is not connected to any circuitry in the active semiconductor region.

Assignees

• Infineon Technologies Ag

Inventors

• Graetz Eric
• Bilban Hermann
• Pairleitner Rudolf

Classifications

• H10P74/277 Primary

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• H10P74/273

  Interconnections for measuring or testing, e.g. probe pads · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H10W20/43

  Layouts of interconnections · CPC title