Method for producing Ga2O3 based crystal film

Patent metadata

Field	Value
Publication number	US-9657410-B2
Application number	US-201214357180-A
Country	US
Kind code	B2
Filing date	Nov 27, 2012
Priority date	Nov 29, 2011
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A Ga 2 O 3 crystal film is epitaxially grown on a Ga 2 O 3 crystal substrate using an MBE method, while controlling the n-type conductivity with high accuracy. Provided is a method for producing a Ga 2 O 3 crystal film, wherein a conductive Ga 2 O 3 crystal film is formed by epitaxial growth using an MBE method. This method for producing a Ga 2 O 3 crystal film comprises a step wherein a Ga 2 O 3 single crystal film containing Sn is grown by producing a Ga vapor and an Sn vapor and supplying the Ga vapor and the Sn vapor to the surface of a Ga 2 O 3 crystal substrate as molecular beams. The Sn vapor is produced by heating Sn oxide that is filled in a cell of an MBE apparatus.

First claim

The invention claimed is:

1. A method for producing a Ga 2 O 3 based crystal film using a molecular beam epitaxy (MBE) method to form a conductive Ga 2 O 3 based crystal film by epitaxial growth, the method comprising:
generating Ga vapor and Sn vapor and supplying the Ga vapor and the Sn vapor as a molecular beam to a surface of a Ga 2 O 3 based crystal substrate, while an oxygen-based gas being supplied to a vacuum chamber, so as to grow a Ga 2 O 3 based single crystal film comprising Sn,
wherein the Sn vapor is generated by heating a Sn oxide that is filled in a cell of an MBE apparatus, and
wherein the surface of the Ga 2 O 3 based crystal substrate includes a plane rotated by not less than 50° and not more than 90° with respect to a (100) plane.

2. The method for producing a Ga 2 O 3 based crystal film according to claim 1 , wherein the Sn oxide comprises SnO 2 , and
wherein the Sn vapor is generated at a temperature of the cell of 650° C. to 925° C.

3. The method for producing a Ga 2 O 3 based crystal film according to claim 1 , wherein the Ga 2 O 3 based single crystal film is epitaxially grown at a growth rate of 0.01 μm/h to 100 μm/h.

4. The method for producing a Ga 2 O 3 based single crystal film according to claim 1 , wherein a carrier concentration of the Ga 2 O 3 based crystal film is 1×10 14 /cm 3 to 1×10 20 /cm 3 .

5. The method for producing a Ga 2 O 3 based crystal film according to claim 3 , wherein a carrier concentration of the Ga 2 O 3 based single crystal film is 1×10 14 /cm 3 to 1×10 20 /cm 3 .

6. The method for producing a Ga 2 O 3 based crystal film according to claim 1 , wherein the Sn oxide comprises SnO 2 , and
wherein the Sn vapor is generated at a temperature of the cell of 450° C. to 1080° C.

7. The method for producing a Ga 2 O 3 based crystal film according to claim 6 , wherein the Ga 2 O 3 based single crystal film is epitaxially grown at a growth rate of 0.01 μm/h to 100 μm/h.

8. The method for producing a Ga 2 O 3 based crystal film according to claim 6 , wherein the Ga 2 O 3 based single crystal film is epitaxially grown at a growth temperature of 530° C. to 600° C.

9. The method for producing a Ga 2 O 3 based crystal film according to claim 2 , wherein the Ga 2 O 3 based single crystal film is epitaxially grown at a growth rate of 0.01 μm/h to 100 μm/h.

10. The method for producing a Ga 2 O 3 based crystal film according to claim 2 , wherein a carrier concentration of the Ga 2 O 3 based single crystal film is 1×10 14 /cm 3 to 1×10 20 /cm 3 .

11. A method for producing a Ga 2 O 3 based crystal film using a molecular beam epitaxy (MBE) method to form a conductive Ga 2 O 3 based crystal film by epitaxial growth, the method comprising:
generating Ga vapor and Sn vapor and supplying the Ga vapor and the Sn vapor as a molecular beam to a surface of a Ga 2 O 3 based crystal substrate, while an oxygen-based gas being supplied to a vacuum chamber, so as to grow a Ga 2 O 3 based single crystal film comprising Sn,
wherein the Sn vapor is generated by heating a Sn oxide that is filled in a cell of an MBE apparatus,
wherein a growth temperature is set between 530° C. and 570° C., and
wherein an n-type conductivity of the Ga 2 O 3 based single crystal film is controlled by a temperature of the cell.

12. The method for producing a Ga 2 O 3 based crystal film according to claim 1 , wherein the Sn oxide comprises SnO 2 , and
wherein the Ga 2 O 3 based single crystal film is epitaxially grown at a growth rate of 0.01 μm/h to 100 μm/h.

13. The method for producing a Ga 2 O 3 based crystal film according to claim 1 , wherein the Sn oxide comprises SnO 2 , and
wherein a carrier concentration of the Ga 2 O 3 based single crystal film is 1×10 14 /cm 3 to 1×10 20 /cm 3 .

14. The method for producing a Ga 2 O 3 based crystal film according to claim 1 , wherein the plane rotated by not less than 50° and not more than 90° with respect to the (100) plane includes one of a (010) plane, a (001) plane, a (−201) plane, a (101) plane, and a (310) plane.

15. The method for producing a Ga 2 O 3 based crystal film according to claim 1 , wherein an n-type conductivity of the Ga 2 O 3 based single crystal film is controlled by a temperature of the cell.

16. The method for producing a Ga 2 O 3 based crystal film according to claim 1 , wherein a conductivity of the Ga 2 O 3 based single crystal film is controlled by a temperature of the cell.

17. The method for producing a Ga 2 O 3 based crystal film according to claim 11 , wherein the Sn oxide comprises SnO 2 , and
wherein the Ga 2 O 3 based single crystal film is epitaxially grown at a growth rate of 0.01 μm/h to 100 μm/h.

18. The method for producing a Ga 2 O 3 based crystal film according to claim 17 , wherein the Sn vapor is generated at a temperature of the cell of 450° C. to 1,080° C.

19. The method for producing a Ga 2 O 3 based crystal film according to claim 11 , wherein the Sn oxide comprises SnO 2 , and
wherein a carrier concentration of the Ga 2 O 3 based single crystal film is 1×10 14 /cm 3 to 1×10 20 /cm 3 .

20. The method for producing a Ga 2 O 3 based crystal film according to claim 19 , wherein the Sn vapor is generated at a temperature of the cell of 450° C. to 1,080° C.

Assignees

• Tamura Seisakusho Kk

Inventors

• Sasaki Kohei

Classifications

• H10P14/3442

  N-type · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/2918

  being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• C30B29/16

  Oxides · CPC title