Mesoporous silicon synthesis and applications in Li-ion batteries and solar hydrogen fuel cells

Patent metadata

Field	Value
Publication number	US-9656243-B2
Application number	US-201414328136-A
Country	US
Kind code	B2
Filing date	Jul 10, 2014
Priority date	Jul 10, 2013
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

We provide a mesoporous silicon material (PSi) prepared via a template-free and HF-free process. The production process is facile and scalable, and it may be conducted under mild reaction conditions. The silicon may be produced directly by the reduction of a silicon-halogenide precursor (for example, SiCl 4 ) with an alkaline alloy (for example, NaK alloy). The resulting Si-salt matrix is then annealed for the pore formation and crystallite growth. Final product is obtained by removal of the salt by-products with water.

First claim

We claim:

1. A process for production of porous crystalline silicon, comprising:
reducing a silicon-halogenide precursor with at least one of an alkaline metal and an alkaline metal alloy to produce a silicon-salt matrix;
annealing the silicon-salt matrix, thereby forming a plurality of salt crystals in a porous silicon structure; and
washing the porous silicon structure with water, thereby providing a porous crystalline silicon.

2. The process of claim 1 , wherein the silicon-halogenide precursor is selected from the group consisting of SiCl 4 , SiI 4 , SiBr 4 , and SiF 4 .

3. The process of claim 2 , wherein the silicon-halogenide precursor is SiCl 4 .

4. The process of claim 1 , wherein the alkaline alloy is selected from the group consisting of sodium-potassium alloy (NaK), sodium metal, and sodium naphthanide.

5. The process of claim 1 , wherein the alkaline alloy is NaK and other alkaline metal or alloy, and the silicon-halogenide precursor is SiCl 4 .

6. The process of claim 1 , wherein the process does not include contacting any member of the group consisting of the silicon-halogenide precursor, the silicon-salt matrix, and the porous silicon structure with hydrofluoric acid.

7. The process of claim 1 , wherein the porous silicon structure includes a plurality of pores ranging in size from 1 nm to 200 nm, wherein the pore size is governed by the size of at least one external template.

8. The process of claim 1 , wherein the porous silicon structure includes a plurality of pores distributed in an ordered distribution.

9. The process of claim 1 , wherein the porous silicon structure has a total pore volume between 0.86 and 2.00 cm 3 g −1 .

10. The process of claim 1 , wherein the porous silicon structure has a surface area between 220 and 700 m 2 g −1 .

11. The process of claim 1 , wherein the silicon-halogenide precursor is mixed with an external template, wherein the porous silicon structure has an average pore size greater than 20 nm.

12. The process of claim 1 , wherein the reducing step is conducted in a toluene solution.

13. The process of claim 9 , wherein the porous silicon structure has a total pore volume between 0.86 and 1.44 cm 3 g −1 .

14. The process of claim 10 , wherein the porous silicon structure has a surface area between 220 and 580 m 2 g −1 .

15. The process of claim 14 , wherein the porous silicon structure has a surface area between 400 and 525 m 2 g −1 .

16. The process of claim 1 , wherein the porous silicon structure has a mean average pore diameter between 8 and 12 nm.

17. The process of claim 1 , wherein the porous silicon structure has a mean average pore diameter less than 8 nm.

18. The process of claim 1 further comprising, prior to washing the porous silicon structure with water, calcining the porous silicon structure at a temperature from 600° C. to 950° C.

19. The process of claim 18 further comprising, prior to washing the porous silicon structure with water, calcining the porous silicon structure at a temperature from 650° C. to 900° C.

20. The process of claim 19 , further comprising, prior to washing the porous silicon structure with water, calcining the porous silicon structure at a temperature from 700° C. to 800° C.

Assignees

• Penn State Res Found

Inventors

• Wang Donghai
• Dai Fang
• Yi Ran
• Zai Jianto

Classifications

• B01J35/1023

  Operations & Transport · mapped topic

• B01J35/1042

  Operations & Transport · mapped topic

• Y02P70/56

  Cross-Sectional Technologies · mapped topic

• B01J35/1061

  Operations & Transport · mapped topic

• B01J35/004

  Operations & Transport · mapped topic