Graphene, power storage device, and electric device

Patent metadata

Field	Value
Publication number	US-9653728-B2
Application number	US-201514969949-A
Country	US
Kind code	B2
Filing date	Dec 15, 2015
Priority date	Jun 24, 2011
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

An object is to provide graphene which has high conductivity and is permeable to ions of lithium or the like. Another object is to provide, with use of the graphene, a power storage device with excellent charging and discharging characteristics. Graphene having a hole inside a ring-like structure formed by carbon and nitrogen has conductivity and is permeable to ions of lithium or the like. The nitrogen concentration in graphene is preferably higher than or equal to 0.4 at. % and lower than or equal to 40 at. %. With use of such graphene, ions of lithium or the like can be preferably made to pass; thus, a power storage device with excellent charging and discharging characteristics can be provided.

First claim

What is claimed is:

1. A method of manufacturing an electrode of a power storage device comprising:
forming a graphene oxide on a particle; and
reducing the graphene oxide by heat treatment in an atmosphere containing nitrogen so that a graphene doped with nitrogen is formed on the particle,
wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.

2. The method according to claim 1 , wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. %.

3. The method according to claim 1 , wherein the hole is a nine- or more-membered ring.

4. The method according to claim 1 , wherein the atmosphere contains ammonia.

5. The method according to claim 1 , wherein the heat treatment is performed at 150° C. or higher.

6. The method according to claim 1 , wherein the particle is made of silicon.

7. A method of manufacturing an electrode of a power storage device comprising:
forming a mixture containing a graphene oxide and a particle;
heating the mixture to reduce the graphene oxide and form a graphene on the particle; and
adding nitrogen to the graphene after performing the heating,
wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.

8. The method according to claim 7 , wherein the step of heating is performed in a vacuum or in an inert gas.

9. The method according to claim 7 , wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. %.

10. The method according to claim 7 , wherein the hole is a nine- or more-membered ring.

11. The method according to claim 7 , wherein the step of heating is performed at 150° C. or higher.

12. The method according to claim 7 , wherein the particle is made of silicon.

13. The method according to claim 1 ,
wherein the at least one hole of the graphene is positioned on a surface of the particle so as to pass an ion.

14. The method according to claim 7 ,
wherein the at least one hole of the graphene is positioned on a surface of the particle so as to pass an ion.

15. The method according to claim 1 ,
wherein the heat treatment is performed in a range of 150° C. to 200° C.

16. The method according to claim 7 ,
wherein the heat treatment is performed in a range of 150° C. to 200° C.

Assignees

• Semiconductor Energy Lab

Inventors

• Hirohashi Takuya
• Oguni Teppei

Classifications

• H01G11/32 Primary

  Carbon-based · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01M2220/30

  Batteries in portable systems, e.g. mobile phone, laptop · CPC title

• H01M4/587

  for inserting or intercalating light metals · CPC title

• B82Y30/00 Primary

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title