Organic film transistor, organic semiconductor film, organic semiconductor material and application of these

US9653686B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9653686-B2
Application numberUS-201614993371-A
CountryUS
Kind codeB2
Filing dateJan 12, 2016
Priority dateJul 19, 2013
Publication dateMay 16, 2017
Grant dateMay 16, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent; (Each of R 1 R 2 represents a hydrogen atom or a substituent; each of Ar 1 and Ar 2 independently represents a heteroarylene group or an arylene group; V 1 represents a divalent linking group; m represents an integer of 0 to 6; cy represents a naphthalene ring or an anthracene ring; each of R 3 and R 4 represents a hydrogen atom or a substituent; each of Ar 3 and Ar 4 represents a heterocyclic aromatic ring or an aromatic ring; V 2 represents a divalent linking group; p represents an integer of 0 to 6; n represents an integer of equal to or greater than 2; A is a divalent linking group represented by Formula (101′); each of R A1 to R A6 represents a hydrogen atom, a substituent, or a direct bond with Ar 101 or Ar 102 in Formula (101); and among the groups represented by R A1 to R A6 , two different groups are direct bonds with Ar 101 and Ar 102 in Formula (101) respectively.)

First claim

Opening claim text (preview).

What is claimed is: 1. An organic film transistor comprising a compound, which is composed of n repeating units represented by the following Formula (1-1), (1-2), or (101), in a semiconductor active layer; in Formula (1-1), each of R 1 and R 2 independently represents a hydrogen atom or a substituent; each of Ar 1 and R 2 independently represents a heteroarylene group or an arylene group; V 1 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V 1 may be the same as or different from each other; and n represents an integer of equal to or greater than 2; in Formula (1-2), cy represents a naphthalene ring or an anthracene ring; each of R 3 and R 4 independently represents a hydrogen atom or a substituent; each of Ar 3 and Ar 4 independently represents a heteroarylene group or an arylene group; V 2 represents a divalent linking group; p represents an integer of 0 to 6; when p is equal to or greater than 2, two or more groups represented by V 2 may be the same as or different from each other; and n represents an integer of equal to or greater than 2; in Formula (101), each of Ar 101 and Ar 102 independently represents a heteroarylene group or an arylene group; V 101 represents a divalent linking group; m 101 represents an integer of 1 to 6; when m 101 is equal to or greater than 2, two or more groups represented by V 101 may be the same as or different from each other; n represents an integer of equal to or greater than 2; and A represents a divalent linking group represented by the following Formula (101′); and in Formula (101′), each of R A1 to R A6 independently represents a hydrogen atom, a substituent, or a direct bond with Ar 101 or Ar 102 in Formula (101); and among the groups represented by R A1 to R A6 , two different groups represent direct bonds with Ar 101 and Ar 102 in Formula (101) respectively, the transistor further comprising a compound, which is composed of n repeating units represented by Formula (101), in the semiconductor active layer; in Formula (101), each of Ar 101 and Ar 102 independently represents a heteroarylene group or an arylene group; V 101 represents a divalent linking group; m 101 represents an integer of 1 to 6; when m 101 is equal to or greater than 2, two or more groups represented by V 101 may be the same as or different from each other; n represents an integer of equal to or greater than 2; and A represents a divalent linking group represented by Formula (101′); and in Formula (101′), each of R A1 to R A6 independently represents a hydrogen atom, a substituent, or a direct bond with Ar 101 or Ar 102 in Formula (101); and among the groups represented by R A1 to R A6 , two different groups represent direct bonds with Ar 101 and Ar 102 in Formula (101) respectively, wherein the compound composed of n repeating units represented by Formula (101) is a compound composed of n repeating units represented by any of the following Formulae (101-1) to (101-3); in Formulae (101-1), (101-2), and (101-3), each of R 101 to R 104 and R 141 to R 148 independently represents a hydrogen atom or a substituent; each of Ar 101 and Ar 102 independently represents a heteroarylene group or an arylene group; V 101 represents a divalent linking group; m 101 represents an integer of 1 to 6; when m 101 is equal to or greater than 2, two or more groups represented by V 101 may be the same as or different from each other; each of p 101 and r 101 represents an integer of 0 to 6; when each of p 101 and r 101 is equal to or greater than 2, two or more groups represented by V 101 may be the same as or different from each other; and n represents an integer of equal to or greater than 2, wherein in Formulae (101-1) to (101-3), V 101 is a divalent linking group represented by any of the following Formulae (V-101) to (V-117); in Formulae (V-101) to (V-117), * represents a position where the divalent linking group is bonded to any of Ar 101 and Ar 102 when m 101 , p 101 , or r 101 is 1 and represents a position where the divalent linking group is bonded to an of Ar 101 ,Ar 102 , and divalent linking groups represented by Formulae (V-101) to (V-117) m 101 , p 101 , or r 101 is equal to or greater than 2; each R v in Formulae (V-101), (V-102), (V-105), (V-106), (V-109) to (V-111), (V-113) to (V-115), and (V-117) independently represents a hydrogen atom or an alkyl group; the groups adjacent to each other represented by R v may form a ring by being bonded to each other; each Z in Formulae (V-104), (V-107), (V-108), and (V-112) independently represents a hydrogen atom, an alkyl group, or an alkoxy group; the groups adjacent to each other represented by Z may form a ring by being bonded to each other; each Y in Formula (V-116) independently represents a hydrogen atom, an alkyl group, an alkoxy group, a CN group, or a F atom; and the groups adjacent to each other represented by Y may form a ring by being bonded to each other, and in Formulae (101-1) to (101-3), V 101 represents a divalent linking group represented by any of Formulae (V-101) to (V-108) and (V-111) to (V-115). 2. The organic film transistor according to claim 1 , comprising a compound, which is composed of n repeating units represented by the following Formula (1-1) or (1-2), in the semiconductor active layer; in Formula (1-1), each of R 1 and R 2 independently represents a hydrogen atom or a substituent; each of Ar 1 and Ar 2 independently represents a heteroarylene group or an arylene group; V 1 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V 1 may be the same as or different from each other; and n represents an integer of equal to or greater than 2; and in Formula (1-2), cy represents a naphthalene ring or an anthracene ring; each of R 3 and R 4 independently represents a hydrogen atom or a substituent; each of Ar 3 and Ar 4 independently represents a heteroarylene group or an arylene group; V 2 represents a divalent linking group; p represents an integer of 0 to 6; when p is equal to or greater than 2, two or more groups represented by V 2 may be the same as or different from each other; and n represents an integer of equal to or greater than 2. 3. The organic film transistor according to claim 1 , wherein Formula (1-2) represents a compound composed of n repeating units represented by the following Formula (2-1), (2-2), (2-3), (2-4), or (2-5); in Formulae (2-1) to (2-5), each of R 3 , R 4 , and R 10 to R 33 independently represents a hydrogen atom or a substituent; each of Ar 3 and Ar 4 independently represents a heteroarylene group or a

Assignees

Inventors

Classifications

  • derived from other polycyclic systems · CPC title

  • containing heteroatoms · CPC title

  • Saturated aliphatic units · CPC title

  • Side-chains having heteroaromatic units · CPC title

  • Condensed aromatic systems, e.g. perylene, anthracene or pyrene · CPC title

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What does patent US9653686B2 cover?
An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent; …
Who is the assignee on this patent?
Fujifilm Corp
What technology area does this patent fall under?
Primary CPC classification C08G61/126. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 16 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).