Imaging device having electrode overlying photoelectric conversion layer and having electrical contact to electrode

Patent metadata

Field	Value
Publication number	US-9653498-B2
Application number	US-201615188009-A
Country	US
Kind code	B2
Filing date	Jun 21, 2016
Priority date	Jul 30, 2014
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

An imaging device includes a plurality of pixels arranged in a pixel region, each of the plurality of pixels including a photoelectric conversion element including a first electrode provided above a substrate, a second electrode provided above the first electrode and a photoelectric conversion layer provided between the first electrode and the second electrode, an interconnection layer provided between the substrate and the first electrode, the interconnection layer including a first conductive member extending in a first direction, and a second conductive member arranged at a level lower than the first conductive member and extending in a second direction intersecting the first direction, a first contact portion provided in the pixel region, the first contact portion electrically connecting the second electrode and the first conductive member, and a second contact portion electrically connecting the first conductive member and the second conductive member.

First claim

What is claimed is:

1. An imaging device comprising:
a semiconductor substrate;
a plurality of pixels, each of the plurality of pixels including a transistor arranged in a pixel region of the semiconductor substrate and a photoelectric conversion element including a first electrode provided above the semiconductor substrate, a second electrode provided above the first electrode and a photoelectric conversion layer provided between the first electrode and the second electrode;
a conductive member included in an interconnection layer provided between the semiconductor substrate and the first electrode; and
a contact portion provided in the pixel region, the contact portion connecting the second electrode and the conductive member.

2. The imaging device according to claim 1 , wherein each of the plurality of pixels includes a microlens provided above the second electrode.

3. The imaging device according to claim 2 , wherein each of the plurality of pixels includes a color filter provided between the second electrode and the microlens.

4. The imaging device according to claim 3 further comprising:
a plurality of output lines included in a second interconnection layer different from the interconnection layer, wherein
the plurality of pixels is arranged in a matrix including a plurality of rows and a plurality of columns, and
the plurality of output lines are provided correspondingly to the plurality of columns.

5. The imaging device according to claim 4 , wherein the transistor outputs a pixel signal based on charge generated in the photoelectric conversion element to one of the plurality of output lines.

6. The imaging device according to claim 5 , wherein the conductive member has a shape of a mesh or a grid in a planar view of the semiconductor substrate.

7. The imaging device according to claim 6 , wherein the contact portion is provided at least one for each of the plurality of pixels.

8. The imaging device according to claim 6 , wherein the contact portion is provided for every m rows and/or every n columns of the plurality of pixels, wherein m and n are natural numbers.

9. The imaging device according to claim 6 , further comprising:
a second contact portion provided in a peripheral region provided next to the pixel region, the second contact portion connecting the second electrode and a second conductive member included in the interconnection layer.

10. The imaging device according to claim 9 , wherein the second electrode is a common electrode common to the plurality of pixels.

11. The imaging device according to claim 9 , wherein the plurality of pixels is divided into a plurality of groups, and
the second electrode as a common electrode and the interconnection layer are provided for each of the plurality of groups.

12. The imaging device according to claim 1 , wherein the photoelectric conversion layer includes a quantum dot.

13. An imaging system comprising:
an imaging device including
a semiconductor substrate,
a plurality of pixels, each of the plurality of pixels including a transistor arranged in a pixel region of the semiconductor substrate and a photoelectric conversion element including a first electrode provided above the semiconductor substrate, a second electrode provided above the first electrode and a photoelectric conversion layer provided between the first electrode and the second electrode,
a conductive member included in an interconnection layer provided between the substrate and the first electrode, and
a contact portion provided in the pixel region, the contact portion connecting the second electrode and the conductive member; and
a signal processing device configured to process a signal from the imaging device.

14. The imaging system according to claim 13 , wherein each of the plurality of pixels includes a microlens provided above the second electrode.

15. The imaging system according to claim 14 , wherein each of the plurality of pixels includes a color filter provided between the second electrode and the microlens.

16. The imaging system according to claim 15 , wherein
the imaging device further comprises a plurality of output lines included in a second interconnection layer different from the interconnection layer,
the plurality of pixels is arranged in a matrix including a plurality of rows and a plurality of columns, and
the plurality of output lines are provided correspondingly to the plurality of columns.

17. The imaging system according to claim 16 , wherein the transistor outputs a pixel signal based on charge generated in the photoelectric conversion element to one of the plurality of output lines.

18. The imaging system according to claim 17 , wherein the conductive member has a shape of a mesh or a grid in a planar view of the semiconductor substrate.

19. The imaging system according to claim 18 , wherein the contact portion is provided at least one for each of the plurality of pixels.

20. The imaging system according to claim 18 , wherein the contact portion is provided for every m rows and/or every n columns of the plurality of pixels, wherein m and n are natural numbers.

Assignees

• Canon Kk

Inventors

• Yamashita Takanori
• Hashimoto Seiji

Classifications

• H01L27/14612

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H01L27/14621

  Electricity · mapped topic

• H01L31/035218

  Electricity · mapped topic

• H01L27/14643

  Electricity · mapped topic