Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

Patent metadata

Field	Value
Publication number	US-9653259-B2
Application number	US-201314400815-A
Country	US
Kind code	B2
Filing date	May 14, 2013
Priority date	May 14, 2012
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion element for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.

First claim

The invention claimed is:

1. A method for determining a beamlet position of a charged particle beamlet in a charged particle multi-beamlet exposure apparatus provided with a sensor comprising a conversion element for converting the energy of charged particles into light and a light sensitive detector, the conversion element being provided with a sensor surface area provided with a two-dimensional pattern of beamlet blocking and non-blocking regions, the method comprising:
taking a plurality of measurements using said charged particle beamlet, wherein said charged particle beamlet is turned off or blocked from reaching the two-dimensional pattern in between each of said plurality of measurements,
wherein each measurement comprises:
writing two-dimensional feature at a position onto a portion of the two-dimensional pattern with said charged particle beamlet, wherein said two-dimensional feature is written by scanning the charged particle beamlet along a two-dimensional path over the two-dimensional pattern while allowing the charged particle beamlet to expose the two-dimensional pattern during a portion of the two-dimensional path wherein the position at which the feature is exposed differs for each measurement, the positions forming a two-dimensional grid;
receiving light generated by the conversion element in response to charged particles, being part of said charged particle beam writing the two-dimensional feature, being transmitted through the non-blocking regions of the two-dimensional pattern; and
converting the received light into a light intensity value by means of the light sensitive detector, and assigning the light intensity value to the position at which the measurement was taken;

wherein the position at which the two-dimensional feature is written onto the portion of the two-dimensional pattern differs for each measurement, resulting in a plurality of two-dimensional features being written onto the two-dimensional pattern, the positions at which the two-dimensional features are written forming a two-dimensional grid;
determining the position of said charged particle beamlet with respect to the two-dimensional pattern on the basis of a two-dimensional image created by means of the light intensity values at the different positions within the two-dimensional grid, the two-dimensional image showing light intensity as a function of grid position.

2. The method of claim 1 , wherein the two-dimensional pattern of beamlet blocking and non-blocking regions takes the form of a blocking surface provided with non-blocking holes.

3. The method of claim 2 , wherein the holes have a substantially circular shape.

4. The method of claim 3 , wherein the holes are of the same size as the size of the exposed feature.

5. The method of claim 1 , wherein the two-dimensional pattern of beamlet blocking and non-blocking regions takes the form of a non-blocking surface provided with blocking features.

6. The method of claim 5 , wherein the blocking features have a substantially circular shape.

7. The method of claim 6 , wherein the blocking features are of the same size as the size of the written two-dimensional feature.

8. The method of claim 1 , wherein the written two-dimensional feature has a substantially circular shape.

9. The method of claim 1 , wherein writing a two-dimensional feature onto a portion of the two-dimensional pattern with a charged particle beamlet comprises scanning the beamlet along a two-dimensional path over the portion of the two-dimensional pattern during which scanning the charged particle beamlet is active during a predetermined portion of the scan path, and wherein differing the position at which the two-dimensional feature is exposed for each measurement comprises changing the predetermined portion of the scan path for each measurement.

10. The method of claim 9 , wherein the scanning is performed by electrostatic deflection.

11. The method of claim 1 , wherein determining the position of the charged particle beamlet includes fitting a 2D Gaussian.

12. A computer readable medium for performing, when executed by a processor, the method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus according to claim 1 .

13. A method for determining a distance between two beamlets in a charged particle multi-beamlet exposure apparatus provided with a sensor comprising a conversion element for converting the energy of charged particles into light and a light sensitive detector, the conversion element being provided with a sensor surface area provided with a two-dimensional pattern of beamlet blocking and non-blocking regions, the method comprising:
performing a method for determining a beamlet position of a charged particle beamlet in said charged particle multi-beamlet exposure apparatus, the method for determining a beamlet position comprising:
taking a plurality of measurements using said charged particle beam let, wherein each measurement comprises:
exposing a two-dimensional feature at a position onto a portion of the two-dimensional pattern with said charged particle beamlet wherein the position at which the feature is exposed differs for each measurement, the positions forming a two-dimensional grid;
receiving light generated by the conversion element in response to charged particles, being part of said charged particle beam writing the two-dimensional feature, being transmitted through the non-blocking regions of the two-dimensional pattern; and
converting the received light into a light intensity value by means of the light sensitive detector, and assigning the light intensity value to the position at which the measurement was taken;
determining the position of said charged particle beamlet with respect to the two-dimensional pattern on the basis of a two-dimensional image created by means of the light intensity values at the different positions within the two-dimensional grid;
transferring the two-dimensional pattern in a direction substantially parallel to the sensor surface plane over a predetermined distance;
taking a plurality of said measurements for determining a beamlet position of a charged particle beamlet in said charged particle multi-beamlet exposure apparatus,

wherein each measurement comprises:
exposing a two-dimensional feature onto a portion of the two-dimensional pattern with a further charged particle beamlet, the further charged particle beamlet having a theoretical distance from said charged particle beamlet equal to the predetermined distance over which the two-dimensional pattern has been transferred, wherein the position at which the feature is exposed differs for each measurement, the positions forming a two-dimensional grid;
receiving light generated by the conversion element in response to charged particles, being part of said charged particle beam writing the two-dimensional feature, being transmitted through the non-blocking regions of two-dimensional pattern; and
converting the received light into a further light intensity value by means of the light sensitive detector, and assigning the further light intensity value to the position at which the measurement was taken;
determining the position of the further charged particle beamlet with respect to the two-dimensional pattern on the basis of a two-dimensional image created by means of the further light intensity values at the different positions within the two-dimensional grid;
determining the actual distance between the charged particle beamlet and the further beamlet based on the determined charged particle beamlet position, the determined further charged particle beamlet position and the predetermined distance.

Assignees

• Mapper Lithography Ip Bv

Inventors

• Scheffers Paul Ijmert

Classifications

• H01J37/3045 Primary

  Object or beam position registration · CPC title

• H01J2237/31774

  Multi-beam · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01J2237/24514

  Beam diagnostics including control of the parameter or property diagnosed (H01J2237/30472 takes precedence) · CPC title

• H01J2237/065

  Source emittance characteristics · CPC title