Bonded body and power module substrate

Patent metadata

Field	Value
Publication number	US-9648737-B2
Application number	US-201414913845-A
Country	US
Kind code	B2
Filing date	Aug 18, 2014
Priority date	Aug 26, 2013
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic member and the Cu member, and intermetallic compounds containing P and Ti are dispersed in the Cu—Sn layer.

First claim

The invention claimed is:

1. A bonded body comprising:
a ceramic member made of ceramics; and
a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material,
wherein a Cu—Sn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic member and the Cu member, and
intermetallic compounds containing P and Ti are dispersed in the Cu—Sn layer.

2. A power module substrate comprising the bonded body according to claim 1 , wherein the substrate further comprises:
a ceramic substrate formed of the ceramic member; and
a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material,
wherein the Cu—Sn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic substrate and the circuit layer, and
the intermetallic compounds containing P and Ti are dispersed in the Cu—Sn layer.

3. The power module substrate according to claim 2 ,
wherein a metal layer is formed on a second surface of the ceramic substrate.

4. The power module substrate according to claim 3 ,
wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material,
a Cu—Sn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic substrate and the metal layer, and
intermetallic compounds containing P and Ti are dispersed in the Cu—Sn layer.

5. The power module substrate according to claim 3 , wherein the metal layer is made of Al or an Al alloy.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W70/692

  Ceramics or glasses · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W40/037

  Assembling together parts thereof · CPC title