Magnetic memory devices

Patent metadata

Field	Value
Publication number	US-9647201-B2
Application number	US-201514729536-A
Country	US
Kind code	B2
Filing date	Jun 3, 2015
Priority date	Sep 26, 2014
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

The inventive concepts provide magnetic memory devices. The device includes a first magnetic pattern provided in one united body on a substrate and having a plurality of through-holes, a plurality of second magnetic patterns spaced apart from each other on the first magnetic pattern, a tunnel barrier between the first magnetic pattern and the second magnetic patterns, top electrodes disposed on the second magnetic patterns, respectively, and a plurality of plugs electrically connecting the top electrodes to the substrate through the through-holes, respectively.

First claim

What is claimed is:

1. A magnetic memory device, comprising:
a first magnetic pattern that is one united body on a substrate, the first magnetic pattern including a plurality of through-holes;
a plurality of second magnetic patterns on the first magnetic pattern, the plurality of second magnetic patterns being spaced apart from each other;
a tunnel barrier between the first magnetic pattern and the plurality of second magnetic patterns;
a plurality of top electrodes on the plurality of second magnetic patterns, each top electrode being on a separate second magnetic pattern of the plurality of second magnetic patterns; and
a plurality of plugs configured to electrically connect to the plurality of top electrodes through the plurality of through-holes, each plug of the plurality of plugs being configured to electrically connect to a single top electrode of the plurality of top electrodes through a single through-hole of the plurality of through-holes.

2. The magnetic memory device of claim 1 , wherein,
the first magnetic pattern has a fixed magnetization direction, and
each of the second magnetic patterns has a changeable magnetization direction.

3. The magnetic memory device of claim 1 , wherein each plug of the plurality of plugs includes,
a first plug in a first interlayer insulating layer between the substrate and the first magnetic pattern;
a second plug in a separate through-hole of the plurality of through-holes and a second interlayer insulating layer, the second interlayer insulating layer being between the second magnetic patterns; and
a connection pad between the second plug and a separate top electrode of the plurality of top electrodes.

4. The magnetic memory device of claim 3 , wherein the first plugs are laterally offset from the second magnetic patterns.

5. The magnetic memory device of claim 3 , further comprising:
a plurality of first spacers on separate, respective sidewalls of the second magnetic patterns,
wherein the first spacers and the second interlayer insulating layer include different materials.

6. The magnetic memory device of claim 5 , wherein sidewalls of the through-holes are self-aligned with sidewalls of the first spacers.

7. The magnetic memory device of claim 5 , further comprising:
a plurality of second spacers on separate, respective sidewalls of the plurality of through-holes,
wherein the second spacers are configured to electrically insulate the second plugs from the first magnetic pattern.

8. The magnetic memory device of claim 5 , wherein,
the through-holes penetrate the tunnel barrier, and
the tunnel barrier is between the second interlayer insulating layer and the first magnetic pattern.

9. A magnetic memory device, comprising:
a substrate having a device isolation layer, the device isolation layer defining an active region;
a pair of word lines extending in a first direction to intersect the active region;
a plurality of plugs respectively connected to dopant regions in the active region, the dopant regions spaced apart from each other with the pair of word lines therebetween; and
magnetic tunnel junctions laterally offset from the plugs,
wherein each plug of the plurality of plugs is laterally spaced apart from a plurality of adjacent magnetic tunnel junctions at equal distances.

10. The magnetic memory device of claim 9 , wherein the plurality of adjacent magnetic tunnel junctions are spaced apart from each other at equal distances.

11. The magnetic memory device of claim 9 , wherein each plug of the plurality of plugs is at a center between a separate plurality of adjacent magnetic tunnel junctions.

12. The magnetic memory device of claim 9 , wherein the magnetic tunnel junctions each include,
a first magnetic pattern having a plate shape;
a plurality of second magnetic patterns on the first magnetic pattern; and
a tunnel barrier between the first magnetic pattern and the second magnetic patterns.

13. The magnetic memory device of claim 12 , wherein,
the plugs penetrate the first magnetic pattern, and
the plugs are connected to the second magnetic patterns through separate, respective connection pads on separate, respective plugs of the plurality of plugs.

Assignees

• Park Jongchul
• Byun Kyung Rae
• Samsung Electronics Co Ltd

Inventors

• Park Jongchul
• Byun Kyung Rae

Classifications

• H01L43/08 Primary

  Electricity · mapped topic

• H01L27/228

  Electricity · mapped topic

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/12

  Electricity · mapped topic

• G11C11/1659 Primary

  Cell access · CPC title