Piezoelectric device and method for manufacturing piezoelectric device

Patent metadata

Field	Value
Publication number	US-9647199-B2
Application number	US-201313850520-A
Country	US
Kind code	B2
Filing date	Mar 26, 2013
Priority date	Sep 28, 2010
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

In a method of manufacturing a piezoelectric device, during an isolation formation step, a supporting substrate has a piezoelectric thin film formed on its front with a compressive stress film present on its back. The compressive stress film compresses the surface on a piezoelectric single crystal substrate side of the supporting substrate, and the piezoelectric thin film compresses the back of the supporting substrate, which is opposite to the surface on the piezoelectric single crystal substrate side. Thus, the compressive stress produced by the compressive stress film and that produced by the piezoelectric thin film are balanced in the supporting substrate, which causes the supporting substrate to be free of warpage and remain flat. A driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film.

First claim

What is claimed is:

1. A piezoelectric device comprising:
a support;
a piezoelectric single crystal thin film located on the support and made of a material formed by isolation from a piezoelectric single crystal substrate containing an ionized element implanted thereinto at a concentration peak of the ionized implanted element as an isolation plane;
an electrode film located on the piezoelectric single crystal thin film; and
a stress layer that causes a surface of the support to contract; wherein
the surface of the support is on a side of the support on which the piezoelectric single crystal thin film is located and the surface of the support is extended by the ionized implanted element.

2. The piezoelectric device according to claim 1 , wherein the stress layer is a compressive stress film located on a back side of the support, which is opposite to the surface on the piezoelectric single crystal thin film side, to compress the surface on the piezoelectric single crystal thin film side of the support.

3. The piezoelectric device according to claim 2 , wherein the compressive stress film is made of silicon oxide, silicon nitride, zinc oxide, tantalum oxide, aluminum nitride, or aluminum oxide.

4. The piezoelectric device according to claim 1 , wherein the stress layer is a tensile stress film arranged between the piezoelectric single crystal thin film and the support so as to pull the piezoelectric single crystal thin film.

5. The piezoelectric device according to claim 4 , wherein the tensile stress film is made of silicon oxide, silicon nitride, aluminum nitride, or aluminum oxide.

6. The piezoelectric device according to claim 1 , wherein the support includes a supporting layer arranged to support the piezoelectric single crystal thin film and a void layer located between the piezoelectric single crystal thin film and the compressive stress film.

7. The piezoelectric device according to claim 1 , wherein the electrode film is an interdigital terminal electrode.

8. The piezoelectric device according to claim 1 , wherein the piezoelectric device is one of a plate wave device, a gyroscopic device, an RF switch, and a vibrational electric generator.

Assignees

• Murata Manufacturing Co

Inventors

• Ito Korekiyo

Classifications

• H10P14/3822

  Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing · CPC title

• Y10T29/42

  Piezoelectric device making · CPC title

• H03H9/02574

  of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title

• B81C1/00071

  Channels · CPC title

• H03H9/173

  Air-gaps · CPC title