Light emitting diode (LED) using carbon materials

Patent metadata

Field	Value
Publication number	US-9647169-B2
Application number	US-201414538497-A
Country	US
Kind code	B2
Filing date	Nov 11, 2014
Priority date	Oct 11, 2011
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

Carbon-based light emitting diodes (LEDs) and techniques for the fabrication thereof are provided. In one aspect, a LED is provided. The LED includes a substrate; an insulator layer on the substrate; a first bottom gate and a second bottom gate embedded in the insulator layer; a gate dielectric on the first bottom gate and the second bottom gate; a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED; and metal source and drain contacts to the carbon material.

First claim

What is claimed is:

1. A light emitting diode (LED), comprising:
a substrate;
an insulator layer on the substrate;
a first bottom gate and a second bottom gate embedded in the insulator layer;
a gate dielectric on the first and second bottom gates;
a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED, and wherein at least one region of the carbon material is doped and another region of the carbon material is undoped, wherein at least one first region of the carbon material on top of the first bottom gate and at least one second region on top of the second bottom gate are doped; and
metal source and drain contacts on top of the carbon material with the carbon material being present between the gate dielectric and the metal source and drain contacts, wherein the carbon material terminates under the metal source and drain contacts such that the metal source and drain contacts i) surround a top and sides of opposing ends of the carbon material and ii) are in direct contact with both the carbon material and the gate dielectric.

2. The LED of claim 1 , wherein the substrate comprises a silicon substrate.

3. The LED of claim 1 , wherein the insulator layer comprises silicon dioxide.

4. The LED of claim 1 , wherein the insulator layer has a bilayer configuration.

5. The LED of claim 4 , wherein the insulator layer comprises i) a nitride layer on the substrate and ii) an oxide layer on the nitride layer, and wherein the first bottom gate and the second bottom gate are present in the oxide layer.

6. The LED of claim 1 , wherein the first bottom gate and the second bottom gate each comprises doped polysilicon, and wherein the first bottom gate and the second bottom gate are doped with a same dopant as one another.

7. The LED of claim 1 , wherein the first bottom gate and the second bottom gate each comprises at least one metal.

8. The LED of claim 1 , wherein the gate dielectric comprises hafnium oxide, aluminum oxide or silicon nitride.

9. The LED of claim 1 , wherein the carbon material comprises carbon nanotubes.

10. The LED of claim 1 , wherein the carbon material comprises graphene.

11. The LED of claim 1 , wherein the metal source and drain contacts each comprises titanium.

12. The LED of claim 1 , wherein the insulator layer comprises a single layer of silicon dioxide, and wherein the first bottom gate and the second bottom gate extend only part way through the insulator layer and a portion of the insulator layer separates the first bottom gate and the second bottom gate from the substrate.

13. The LED of claim 1 , wherein the first bottom gate and the second bottom gate are spaced apart from one another by a distance of from about 50 nm to about 2,000 nm.

14. The LED of claim 1 , comprising exactly two bottom gates one of which is the first bottom gate, and another of which is the second bottom gate.

15. The LED of claim 1 , wherein at least one third region of the carbon material between the at least one first region and the at least one second region of the carbon material is undoped.

16. The LED of claim 15 , wherein the at least one third region of the carbon material comprises an ungated region of the carbon material.

Assignees

• IBM

Inventors

• Guo Dechao
• Han Shu-Jen
• Wong Keith Kwong Hon
• Yuan Jun

Classifications

• H01L51/0048

  Electricity · mapped topic

• H01L33/34

  Electricity · mapped topic

• H01L33/26

  Electricity · mapped topic

• H01L51/5203

  Electricity · mapped topic

• H01L33/0041 Primary

  Electricity · mapped topic