Integrated photodetector waveguide structure with alignment tolerance
US-2015364619-A1 · Dec 17, 2015 · US
Germanium photodetector with SOI doping source
US9647165B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9647165-B2 |
| Application number | US-201514830870-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 20, 2015 |
| Priority date | Aug 20, 2015 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
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Abstract
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Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.
First claim
Opening claim text (preview).
The invention claimed is: 1. A photodetector, comprising: a semiconductor layer including a silicon (Si) portion and an n-type silicon germanium (SiGe) portion; a SiGe layer including an alternating sequence of n+-type SiGe and p-type SiGe; a barrier layer separating the semiconductor layer from the SiGe layer; a crystallization window in the barrier layer, wherein the SiGe layer contacts the n-type SiGe portion of the semiconductor layer in the crystallization window in the barrier layer; and a plurality of metal contacts to the SiGe layer. 2. The photodetector of claim 1 , wherein the n-type SiGe portion of the semiconductor layer comprises about 99% Si and about 1% Ge. 3. The photodetector of claim 1 , wherein the SiGe layer comprises about 50% Ge and about 50% Si. 4. The photodetector of claim 1 , wherein the crystallization window has a width from about 0.2 μm to about 1.0 μm.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L31/109Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9647165B2 cover?
- Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) a…
- Who is the assignee on this patent?
- Globalfoundries Inc, Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L31/109. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 09 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).