Oxygen doped cadmium magnesium telluride alloy
US-2015372180-A1 · Dec 24, 2015 · US
US9647163B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9647163-B2 |
| Application number | US-201214001311-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 17, 2012 |
| Priority date | Feb 24, 2011 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
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The present invention relates to a solar cell having nanostructures on both surfaces of a transparent substrate, and to a method for manufacturing same. The nano-structures, which face each other with respect to the substrate and which transport electrons, are formed using zinc-oxide nanowires. Also, a hole-transport layer using CIS nanoparticles is formed in order to absorb light having a short wavelength and to transport generated holes. A hole-transport layer including CIGS nanoparticles for absorbing light having a relatively long wavelength is formed on the side facing the hole-transport layer including the CIS nanoparticles.
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The invention claimed is: 1. A solar cell having a double-sided nanostructure comprising: a substrate; a first photogenerating layer disposed on a first surface of the substrate, the first photogenerating layer being configured to absorb light having a short wavelength; and a second photogenerating layer disposed on a second surface of the substrate and configured to absorb light having a long wavelength, the second surface of the substrate being opposite to the first surface of the substrate, wherein the first photogenerating layer comprises a first negative electrode disposed on the first surface of the substrate; first nanowires disposed on the first negative electrode and extending from a surface of the first negative electrode, the first nanowires respectively having a zinc oxide (ZnO) nanostructure; a first hole-transport layer including CuInS 2 (CIS) nanoparticles, wherein the CIS nanoparticles are adhered to the first nanowires to completely fill spaces between the first nanowires and are disposed on the first nanowires; and a first positive electrode on the first hole-transport layer, and wherein the second photogenerating layer comprises a second negative electrode disposed on the second surface of the substrate; second nanowires disposed on the second negative electrode and extending from a surface of the second negative electrode, the second nanowires respectively having a ZnO nanostructure; a second hole-transport layer including CuInGaS 2 (CIGS) nanoparticles, wherein the CIGS nanoparticles are adhered to the second nanowires to fill spaces between the second nanowires and are disposed on the second nanowires; and a second positive electrode on the second hole-transport layer. 2. The solar cell of claim 1 , wherein the first negative electrode and the second negative electrode comprise indium tin oxide (ITO), aluminum-doped ZnO (AZO), gallium-doped ZnO (GZO), magnesium-doped ZnO (MGO), or molybdenum-doped ZnO. 3. The solar cell of claim 1 , wherein the first nanowires and the second nanowires are formed by an electrochemical deposition process putting an electrode into a ZnO precursor solution and using the behavior of zinc ions relative to a voltage applied to the first negative electrode and the second negative electrode. 4. The solar cell of claim 1 , wherein the first positive electrode includes nickel oxide (NiO), graphene, carbon nanotubes (CNTs), or fullerene. 5. The solar cell of claim 1 , wherein the second positive electrode includes molybdenum (Mo), aluminum (Al), gold (Au), copper (Cu), platinum (Pt), silver (Ag), tungsten (W), nickel (Ni), zinc (Zn), titanium (Ti), zirconium (Zr), hafnium (Hf), cadmium (Cd), or lead (Pb).
Photovoltaic [PV] devices · CPC title
the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO · CPC title
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
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