Semiconductor die, semiconductor package and substrate dicing method
US-2024421000-A1 · Dec 19, 2024 · US
US9646940B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9646940-B2 |
| Application number | US-201113976300-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 1, 2011 |
| Priority date | Dec 27, 2010 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The gas barrier film including, on a base, a first gas barrier layer which is formed by a physical vapor deposition method or a chemical vapor deposition method and contains Si and N; and a second gas barrier layer which is formed by coating a solution containing a polysilazane compound, wherein the second gas barrier layer is subjected to conversion treatment by being irradiated with a vacuum ultraviolet ray; and, when the composition of each layer is represented by SiO x N y , the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (A): (A) the second gas barrier layer includes 50 nm or more of a region of 0.25≦x≦1.1 and 0.4≦y≦0.75 in the thickness direction.
Opening claim text (preview).
What is claimed is: 1. A gas barrier film comprising: a base; a first gas barrier layer which is formed on the base by a physical vapor deposition method or a chemical vapor deposition method, wherein the first gas barrier layer is an inorganic film comprising silicon nitride or silicon oxynitride as a main component and has a film thickness of 40 nm or more and 200 nm or less; and a second gas barrier layer which is directly adjacent to the first gas barrier layer and is formed by coating a solution containing a polysilazane compound on the first gas barrier layer, wherein the second gas barrier layer has a film thickness of 50 nm or more and 300 nm or less, wherein the second gas barrier layer is subjected to a conversion treatment by being irradiated with a vacuum ultraviolet ray; and when the compositions of the second gas barrier layer is represented by SiO x N y , the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (A): (A) the second gas barrier layer includes 50 nm or more of a region of 0.25≦x≦1.1 and 0.4≦y≦0.75 in the thickness direction. 2. The gas barrier film according to claim 1 , wherein the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (B): (B) the second gas barrier layer includes 50 nm or more of a region of 0.25≦x≦0.55 and 0.55≦y≦0.75 in the thickness direction. 3. The gas barrier film according to claim 1 , wherein the composition of the first gas barrier layer is represented by SiO x N y , and the distribution of the compositions SiO x N y of the first gas barrier layer and the second gas barrier layer in a thickness direction satisfies a condition specified in the following (C): (C) the maximum value of a y value in the distribution of the compositions SiO x N y of the first gas barrier layer and the second gas barrier layer is included in the first gas barrier layer. 4. The gas barrier film according to claim 1 , wherein the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (D): (D) in the surface layer region of the second gas barrier layer, x/y is 6.0 or more. 5. The gas barrier film according to claim 4 , wherein the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies the condition specified in the following (A′): (A′) the second gas barrier layer comprises a region of 0.25≦x≦1.1 and 0.45≦y≦0.75, the region having a thickness of 100 nm or more and 300 nm or less in the thickness direction. 6. An electronic device comprising the gas barrier film according to claim 1 .
Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title
with two or more layers, where at least one layer of a composition contains a polymer binder · CPC title
Electricity · mapped topic
Coating not provided for in groups C23C2/00 - C23C24/00 · CPC title
Electricity · mapped topic
Related publications grouped by family.
Answers are generated from the same data shown on this page.