Gas barrier film and electronic device

US9646940B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9646940-B2
Application numberUS-201113976300-A
CountryUS
Kind codeB2
Filing dateDec 1, 2011
Priority dateDec 27, 2010
Publication dateMay 9, 2017
Grant dateMay 9, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The gas barrier film including, on a base, a first gas barrier layer which is formed by a physical vapor deposition method or a chemical vapor deposition method and contains Si and N; and a second gas barrier layer which is formed by coating a solution containing a polysilazane compound, wherein the second gas barrier layer is subjected to conversion treatment by being irradiated with a vacuum ultraviolet ray; and, when the composition of each layer is represented by SiO x N y , the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (A): (A) the second gas barrier layer includes 50 nm or more of a region of 0.25≦x≦1.1 and 0.4≦y≦0.75 in the thickness direction.

First claim

Opening claim text (preview).

What is claimed is: 1. A gas barrier film comprising: a base; a first gas barrier layer which is formed on the base by a physical vapor deposition method or a chemical vapor deposition method, wherein the first gas barrier layer is an inorganic film comprising silicon nitride or silicon oxynitride as a main component and has a film thickness of 40 nm or more and 200 nm or less; and a second gas barrier layer which is directly adjacent to the first gas barrier layer and is formed by coating a solution containing a polysilazane compound on the first gas barrier layer, wherein the second gas barrier layer has a film thickness of 50 nm or more and 300 nm or less, wherein the second gas barrier layer is subjected to a conversion treatment by being irradiated with a vacuum ultraviolet ray; and when the compositions of the second gas barrier layer is represented by SiO x N y , the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (A): (A) the second gas barrier layer includes 50 nm or more of a region of 0.25≦x≦1.1 and 0.4≦y≦0.75 in the thickness direction. 2. The gas barrier film according to claim 1 , wherein the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (B): (B) the second gas barrier layer includes 50 nm or more of a region of 0.25≦x≦0.55 and 0.55≦y≦0.75 in the thickness direction. 3. The gas barrier film according to claim 1 , wherein the composition of the first gas barrier layer is represented by SiO x N y , and the distribution of the compositions SiO x N y of the first gas barrier layer and the second gas barrier layer in a thickness direction satisfies a condition specified in the following (C): (C) the maximum value of a y value in the distribution of the compositions SiO x N y of the first gas barrier layer and the second gas barrier layer is included in the first gas barrier layer. 4. The gas barrier film according to claim 1 , wherein the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (D): (D) in the surface layer region of the second gas barrier layer, x/y is 6.0 or more. 5. The gas barrier film according to claim 4 , wherein the distribution of the composition SiO x N y of the second gas barrier layer in a thickness direction satisfies the condition specified in the following (A′): (A′) the second gas barrier layer comprises a region of 0.25≦x≦1.1 and 0.45≦y≦0.75, the region having a thickness of 100 nm or more and 300 nm or less in the thickness direction. 6. An electronic device comprising the gas barrier film according to claim 1 .

Assignees

Inventors

Classifications

  • Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

  • with two or more layers, where at least one layer of a composition contains a polymer binder · CPC title

  • Electricity · mapped topic

  • Coating not provided for in groups C23C2/00 - C23C24/00 · CPC title

  • H01L23/564Primary

    Electricity · mapped topic

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Frequently asked questions

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What does patent US9646940B2 cover?
The gas barrier film including, on a base, a first gas barrier layer which is formed by a physical vapor deposition method or a chemical vapor deposition method and contains Si and N; and a second gas barrier layer which is formed by coating a solution containing a polysilazane compound, wherein the second gas barrier layer is subjected to conversion treatment by being irradiated with a vacuum …
Who is the assignee on this patent?
Mori Takahiro, Konica Minolta Inc
What technology area does this patent fall under?
Primary CPC classification H01L23/564. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 09 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).