Reflective masks for use in extreme ultraviolet lithography apparatus and methods of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9645484-B2
Application number	US-201514827440-A
Country	US
Kind code	B2
Filing date	Aug 17, 2015
Priority date	Oct 22, 2014
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.

First claim

What is claimed is:

1. A reflective mask, comprising:
a reflective multi-layer on a mask substrate;
a plurality of support patterns spaced apart from one another,
the support patterns being in a main trench of the reflective multi-layer,
the support patterns corresponding to areas of the reflective mask not transferred onto an exposure target substrate, and
the support patterns partitioning the main trench to form a plurality of auxiliary trenches; and

a light absorption pattern including a plurality of auxiliary light absorption patterns, the auxiliary light absorption patterns being in the auxiliary trenches.

2. The reflective mask of claim 1 , wherein the auxiliary light absorption patterns are recessed within the auxiliary trenches.

3. The reflective mask of claim 1 , wherein the support patterns have a same width.

4. The reflective mask of claim 1 , wherein the support patterns are integral with the reflective multi-layer.

5. The reflective mask of claim 1 , wherein
the support patterns have a same depth, and
the auxiliary light absorption patterns have a same thickness.

6. The reflective mask of claim 1 , wherein
the support patterns have different depths, and
the auxiliary light absorption patterns have different thicknesses.

7. The reflective mask of claim 1 , further comprising:
a capping layer on the reflective multi-layer so as to protect the reflective multi-layer,
the main trench extending through the capping layer.

8. A reflective mask, comprising:
a reflective multi-layer on a mask substrate;
a first light absorption pattern in a first main trench of the reflective multi-layer; and
a second light absorption pattern spaced apart from the first light absorption pattern,
the second light absorption pattern being in a second main trench of the reflective multi-layer, and
the second main trench being wider than the first main trench.

9. The reflective mask of claim 8 , wherein the first light absorption pattern and the second light absorption pattern are recessed within the first main trench and the second main trench, respectively.

10. The reflective mask of claim 8 , wherein a depth of the second main trench is equal to a depth of the first main trench.

11. The reflective mask of claim 8 , wherein a depth of the second main trench is deeper than a depth of the first main trench.

12. The reflective mask of claim 8 , wherein the second light absorption pattern includes a plurality of auxiliary light absorption patterns.

13. The reflective mask of claim 12 , further comprising:
support patterns between the auxiliary light absorption patterns in the second main trench,
the support patterns supporting the auxiliary light absorption patterns, and
the support patterns corresponding to areas of the reflective mask not transferred onto an exposure target substrate.

14. The reflective mask of claim 12 , wherein the auxiliary light absorption patterns have different depths.

15. A reflective mask, comprising:
a reflective multi-layer on a mask substrate, the reflective multi-layer including,
a first light-absorption region and a second light-absorption region spaced apart from each other, and
a reflective support pattern in the second light-absorption region; and

a light absorption pattern within the reflective multi-layer and interposed between the reflective support pattern.

16. The reflective mask of claim 15 , wherein the reflective support pattern protrudes from an upper surface of the reflective multi-layer.

17. The reflective mask of claim 15 , wherein the reflective multi-layer is configured to reflect light having a wavelength of about 10 nm to about 124 nm.

18. The reflective mask of claim 15 , wherein an uppermost surface of the reflective support pattern is coplanar with an uppermost surface of the reflective multi-layer.

Assignees

• Kim Seong-Sue
• Seo Hwan-Seok
• Kim In-Sung
• Kim Tae-Geun
• Samsung Electronics Co Ltd

Inventors

• Kim Seong-Sue
• Seo Hwan-Seok
• Kim In-Sung
• Kim Tae-Geun

Classifications

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title