Integrated photonic devices with reduced sensitivity to external influences
US-9075251-B2 · Jul 7, 2015 · US
US9645312B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9645312-B2 |
| Application number | US-201514808511-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2015 |
| Priority date | Jul 24, 2015 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
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A polarization splitter/combiner and method of forming the same includes a first waveguide having a direction of propagation in a first direction. The height of the first waveguide is greater than the width of the first waveguide. A second waveguide is in proximity to the first waveguide and has a direction of propagation substantially parallel to the first direction in an interaction region. The second waveguide includes a first portion having a greater than the width of the first portion and a second portion having a width greater than a height of the second portion.
Opening claim text (preview).
The invention claimed is: 1. A polarization splitter/combiner, comprising: a first waveguide having a direction of propagation in a first direction, wherein a height of the first waveguide is greater than a width of the first waveguide; a second waveguide, disposed in proximity to the first waveguide and having a direction of propagation substantially parallel to the first direction in an interaction region, said second waveguide comprising: a first portion, wherein a height of the first portion is greater than a width of the first portion; a second portion, wherein a width of the second portion is greater than a height of the second portion; and a layer of insulator material directly between the first and second portion. 2. The polarization splitter of claim 1 , wherein the width of the first waveguide increases in the interaction region. 3. The polarization splitter of claim 1 , wherein the first and second waveguides are each formed from two layers. 4. The polarization splitter of claim 3 , wherein a bottom layer of the first and second waveguides is formed from crystalline silicon and a top layer of the first and second waveguides is formed from polysilicon. 5. The polarization splitter of claim 1 , wherein the first waveguide comprises a first portion disposed over a second portion, the first portion having a width that is smaller than a width of the second portion before the interaction region and increases to equal the width of the second portion in the interaction region. 6. The polarization splitter of claim 5 , wherein the first portion of the first waveguide has a width that is smaller than the width of the first portion of the second waveguide at one end of the interaction region and a width that is larger than the width of the second waveguide at an opposite end of the interaction region. 7. The polarization splitter of claim 1 , wherein the second waveguide carries signals having two modes, one of which moves to the first waveguide in the interaction region. 8. A method for forming a polarization splitter/combiner, comprising: forming a lower layer of a first and second waveguide on a substrate; forming a dielectric layer around and over the lower layer of the first and second waveguide; forming an upper layer of the first and second waveguide on the respective lower layer of the first and second waveguide, wherein the combined height of the lower and upper layer of the first waveguide is greater than a width of the first waveguide, and wherein the upper layer of the second waveguide has a substantially smaller width than a width of the lower layer of the second waveguide. 9. The method of claim 8 , wherein a width of the first waveguide increases in the interaction region. 10. A polarization splitter/combiner, comprising: a first waveguide, the first waveguide having a direction of propagation in a first direction, wherein a height of the first waveguide is greater than a width of the first waveguide, comprising a bottom layer formed from crystalline silicon and a top layer formed from polysilicon; a second waveguide formed from two layers, the second waveguide being disposed in proximity to the first waveguide and having a direction of propagation substantially parallel to the first direction in an interaction region, said second waveguide comprising: a bottom layer formed from crystalline silicon; and a top layer formed from polysilicon, wherein the second waveguide further comprises a first portion and a second portion, the height of the first portion being greater than a width of the first portion and a width of the second portion being greater than a height of the second portion. 11. The polarization splitter of claim 10 , wherein the width of the first waveguide increases in the interaction region. 12. The polarization splitter of claim 10 , wherein the first portion is in direct contact with the second portion. 13. The polarization splitter of claim 10 , wherein a layer of insulator material is directly between the first and second portion. 14. The polarization splitter of claim 10 , wherein the first and second waveguides are each formed from two layers. 15. The polarization splitter of claim 14 , wherein a bottom layer of the first and second waveguides is formed from crystalline silicon and a top layer of the first and second waveguides is formed from polysilicon. 16. The polarization splitter of claim 10 , wherein the first waveguide comprises a first portion disposed over a second portion, the first portion having a width that is smaller than a width of the second portion before the interaction region and increases to equal the width of the second portion in the interaction region. 17. The polarization splitter of claim 16 , wherein the first portion of the first waveguide has a width that is smaller than the width of the first portion of the second waveguide at one end of the interaction region and a width that is larger than the width of the second waveguide at an opposite end of the interaction region. 18. A polarization splitter/combiner, comprising: a first waveguide having a direction of propagation in a first direction, wherein a height of the first waveguide is greater than a width of the first waveguide, said first waveguide comprising: a first portion; and a second portion disposed under the first portion, the first portion having a width that is smaller than a width of the second portion before the interaction region and increases to equal the width of the second portion in the interaction region; a second waveguide, disposed in proximity to the first waveguide and having a direction of propagation substantially parallel to the first direction in an interaction region, said second waveguide comprising: a first portion, wherein a height of the first portion is greater than a width of the first portion; and a second portion, wherein a width of the second portion is greater than a height of the second portion. 19. The polarization splitter of claim 18 , wherein the first portion of the first waveguide has a width that is smaller than the width of the first portion of the second waveguide at one end of the interaction region and a width that is larger than the width of the second waveguide at an opposite end of the interaction region.
Silicon · CPC title
using polarisation effects {(G02B6/1226 takes precedence)} · CPC title
Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title
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by deposition of thin films · CPC title
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