Rebalanced adiabatic optical polarization splitter

US9645312B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9645312-B2
Application numberUS-201514808511-A
CountryUS
Kind codeB2
Filing dateJul 24, 2015
Priority dateJul 24, 2015
Publication dateMay 9, 2017
Grant dateMay 9, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A polarization splitter/combiner and method of forming the same includes a first waveguide having a direction of propagation in a first direction. The height of the first waveguide is greater than the width of the first waveguide. A second waveguide is in proximity to the first waveguide and has a direction of propagation substantially parallel to the first direction in an interaction region. The second waveguide includes a first portion having a greater than the width of the first portion and a second portion having a width greater than a height of the second portion.

First claim

Opening claim text (preview).

The invention claimed is: 1. A polarization splitter/combiner, comprising: a first waveguide having a direction of propagation in a first direction, wherein a height of the first waveguide is greater than a width of the first waveguide; a second waveguide, disposed in proximity to the first waveguide and having a direction of propagation substantially parallel to the first direction in an interaction region, said second waveguide comprising: a first portion, wherein a height of the first portion is greater than a width of the first portion; a second portion, wherein a width of the second portion is greater than a height of the second portion; and a layer of insulator material directly between the first and second portion. 2. The polarization splitter of claim 1 , wherein the width of the first waveguide increases in the interaction region. 3. The polarization splitter of claim 1 , wherein the first and second waveguides are each formed from two layers. 4. The polarization splitter of claim 3 , wherein a bottom layer of the first and second waveguides is formed from crystalline silicon and a top layer of the first and second waveguides is formed from polysilicon. 5. The polarization splitter of claim 1 , wherein the first waveguide comprises a first portion disposed over a second portion, the first portion having a width that is smaller than a width of the second portion before the interaction region and increases to equal the width of the second portion in the interaction region. 6. The polarization splitter of claim 5 , wherein the first portion of the first waveguide has a width that is smaller than the width of the first portion of the second waveguide at one end of the interaction region and a width that is larger than the width of the second waveguide at an opposite end of the interaction region. 7. The polarization splitter of claim 1 , wherein the second waveguide carries signals having two modes, one of which moves to the first waveguide in the interaction region. 8. A method for forming a polarization splitter/combiner, comprising: forming a lower layer of a first and second waveguide on a substrate; forming a dielectric layer around and over the lower layer of the first and second waveguide; forming an upper layer of the first and second waveguide on the respective lower layer of the first and second waveguide, wherein the combined height of the lower and upper layer of the first waveguide is greater than a width of the first waveguide, and wherein the upper layer of the second waveguide has a substantially smaller width than a width of the lower layer of the second waveguide. 9. The method of claim 8 , wherein a width of the first waveguide increases in the interaction region. 10. A polarization splitter/combiner, comprising: a first waveguide, the first waveguide having a direction of propagation in a first direction, wherein a height of the first waveguide is greater than a width of the first waveguide, comprising a bottom layer formed from crystalline silicon and a top layer formed from polysilicon; a second waveguide formed from two layers, the second waveguide being disposed in proximity to the first waveguide and having a direction of propagation substantially parallel to the first direction in an interaction region, said second waveguide comprising: a bottom layer formed from crystalline silicon; and a top layer formed from polysilicon, wherein the second waveguide further comprises a first portion and a second portion, the height of the first portion being greater than a width of the first portion and a width of the second portion being greater than a height of the second portion. 11. The polarization splitter of claim 10 , wherein the width of the first waveguide increases in the interaction region. 12. The polarization splitter of claim 10 , wherein the first portion is in direct contact with the second portion. 13. The polarization splitter of claim 10 , wherein a layer of insulator material is directly between the first and second portion. 14. The polarization splitter of claim 10 , wherein the first and second waveguides are each formed from two layers. 15. The polarization splitter of claim 14 , wherein a bottom layer of the first and second waveguides is formed from crystalline silicon and a top layer of the first and second waveguides is formed from polysilicon. 16. The polarization splitter of claim 10 , wherein the first waveguide comprises a first portion disposed over a second portion, the first portion having a width that is smaller than a width of the second portion before the interaction region and increases to equal the width of the second portion in the interaction region. 17. The polarization splitter of claim 16 , wherein the first portion of the first waveguide has a width that is smaller than the width of the first portion of the second waveguide at one end of the interaction region and a width that is larger than the width of the second waveguide at an opposite end of the interaction region. 18. A polarization splitter/combiner, comprising: a first waveguide having a direction of propagation in a first direction, wherein a height of the first waveguide is greater than a width of the first waveguide, said first waveguide comprising: a first portion; and a second portion disposed under the first portion, the first portion having a width that is smaller than a width of the second portion before the interaction region and increases to equal the width of the second portion in the interaction region; a second waveguide, disposed in proximity to the first waveguide and having a direction of propagation substantially parallel to the first direction in an interaction region, said second waveguide comprising: a first portion, wherein a height of the first portion is greater than a width of the first portion; and a second portion, wherein a width of the second portion is greater than a height of the second portion. 19. The polarization splitter of claim 18 , wherein the first portion of the first waveguide has a width that is smaller than the width of the first portion of the second waveguide at one end of the interaction region and a width that is larger than the width of the second waveguide at an opposite end of the interaction region.

Assignees

Inventors

Classifications

  • Silicon · CPC title

  • G02B6/126Primary

    using polarisation effects {(G02B6/1226 takes precedence)} · CPC title

  • Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

  • Splitter · CPC title

  • by deposition of thin films · CPC title

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What does patent US9645312B2 cover?
A polarization splitter/combiner and method of forming the same includes a first waveguide having a direction of propagation in a first direction. The height of the first waveguide is greater than the width of the first waveguide. A second waveguide is in proximity to the first waveguide and has a direction of propagation substantially parallel to the first direction in an interaction region. T…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification G02B6/126. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 09 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).