Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer readable recording medium

Patent metadata

Field	Value
Publication number	US-9644265-B2
Application number	US-201414503707-A
Country	US
Kind code	B2
Filing date	Oct 1, 2014
Priority date	Dec 27, 2013
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

Provided are a method of manufacturing semiconductor device, a substrate processing apparatus and a recording medium which are capable of efficiently removing a deposited film in a shower head and suppressing generation of particles. The method of manufacturing a semiconductor device includes (a) forming a film on a substrate by supplying a film forming gas and an inert gas to the substrate in a processing chamber via a shower head, and (b) removing a deposited film deposited in the shower head in (a) by supplying to the shower head an inert gas, which has a temperature lower than that of the inert gas supplied in (a), into the shower head without the substrate loaded in the processing chamber.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
(a) supplying a film forming gas and an inert gas to a substrate in a processing chamber via a shower head; and
(b) removing a deposited film deposited in the shower head in (a) by: supplying an inert gas having a temperature lower than a temperature of the shower head into the shower head without the substrate loaded in the processing chamber; and directly cooling the deposited film to generate a difference between the temperature of the shower head and a temperature of the deposited film.

2. The method of claim 1 , wherein (a) comprises exhausting an inside atmosphere of the processing chamber by a first exhaust system connected to the processing chamber, and (b) comprises:
(b-1) exhausting an inside atmosphere of the shower head by a second exhaust system connected to the shower head; and
(b-2) exhausting the inside atmosphere of the processing chamber by the first exhaust system after performing (b-1).

3. The method of claim 2 , wherein the inside atmosphere of the processing chamber flows into the shower head in (b-1).

4. The method of claim 2 , wherein the inside atmosphere of the shower head flows into the processing chamber in (b-2).

5. The method of claim 2 , wherein an exhaust flow rate of the second exhaust system is greater than that of the first exhaust system in (b-1).

6. The method of claim 2 , wherein an exhaust flow rate of the first exhaust system is greater than that of the second exhaust system in (b-2).

7. The method of claim 2 , wherein an inside pressure of the shower head is lower than that of the processing chamber in (b-1).

8. The method of claim 7 , wherein the inside pressure of the shower head is higher than that of the processing chamber in (b-2).

9. The method of claim 1 , wherein the inert gas is supplied by an inert gas supply system connected to the shower head and including a gas heating unit, and
the inert gas supplied into the shower head in (a) via the inert gas supply system is heated by the gas heating unit.

10. The method of claim 9 , wherein the inert gas is supplied into the shower head via the inert gas supply system with heating by the gas heating unit being suspended in (b).

11. The method of claim 9 , wherein a flow rate of the inert gas supplied into the shower head via the inert gas supply system in (b) is greater than that of the inert gas supplied to the shower head via the inert gas supply system in (a).

12. The method of claim 9 , wherein a flow rate of the inert gas supplied into the shower head via the inert gas supply system in (b) is greater at the beginning of supply than at the end of supply.

13. The method of claim 9 , wherein the inert gas is supplied into the processing chamber via a second inert gas supply system connected to the processing chamber in (b-1).

14. The method of claim 1 , wherein an inside of the shower head is heated in (b).

15. The method of claim 1 , wherein the temperature of the inert gas supplied in (b) is lower than that of the inert gas supplied in (a).

16. The method of claim 1 , wherein the inert gas is supplied directly into the shower head in (b).

17. The method of claim 1 , further comprising: (c) removing a deposited film deposited in the processing chamber by supplying an inert gas having a temperature lower than a temperature of the processing chamber into the shower head.

18. The method of claim 17 , wherein the inert gas having the temperature lower than the temperature of the shower head is supplied by a first inert gas supply system connected to the shower head in (b), and the inert gas having the temperature lower than the temperature of the processing chamber is supplied by a second inert gas supply system connected to the processing chamber in (c).

19. The method of claim 1 , wherein a difference between temperatures of the shower head and the inert gas supplied in (b) is greater than a difference between temperatures of the shower head and the inert gas supplied in (a).

20. A method of manufacturing a semiconductor device, comprising:
(a) supplying a film forming gas and an inert gas to the substrate in a processing chamber via a shower head; and
(b) removing a deposited film deposited in the shower head in (a) by: supplying an inert gas having a temperature lower than a temperature of the shower head into the shower head without the substrate loaded in the processing chamber; and directly cooling the deposited film to generate a difference between the temperature of the shower head and a temperature of the deposited film,
wherein a difference between temperatures of the shower head and the inert gas supplied in (b) is greater than a difference between temperatures of the shower head and the inert gas supplied in (a).

Assignees

• Hitachi Int Electric Inc
• Hitachi Int Electric Inc

Inventors

• Sasaki Takafumi
• Yamamoto Tetsuo

Classifications

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• H01J37/32853

  Hygiene · CPC title

• H01J37/32862

  In situ cleaning of vessels and/or internal parts · CPC title

• H01J37/32834

  Exhausting · CPC title

• H01J37/32522

  Temperature · CPC title