Wafer processing apparatus and wafer processing method
US-2024395512-A1 · Nov 28, 2024 · US
US9644257B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9644257-B2 |
| Application number | US-201514829621-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 18, 2015 |
| Priority date | May 8, 2015 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
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A method of fabricating a composite PDMS microstructure includes a defining step, a depositing step and an etching step. The defining step is performed for defining a patterned area having a mono-molecule with a thiol group on a PDMS substrate, and the mono-molecule with the thiol group is in liquid phase. The depositing step is performed for placing the PDMS substrate having the mono-molecule with the thiol group into a vacuum chamber within an activation time so as to deposit one Au atom on the patterned area of the PDMS substrate by a vacuum coating process. The etching step is performed for cleaning the PDMS substrate using water, and thus the Au atom can be selectively retained on the patterned area of the PDMS substrate.
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a composite PDMS microstructure, comprising: performing a defining step for defining a patterned area having 3-mercaptopropyl trimethoxysilane (MPTMS) on a PDMS substrate; performing a depositing step by placing the PDMS substrate having MPTMS into a vacuum chamber for a deposition time so as to deposit a plurality of Au atoms on the patterned area of the PDMS substrate by a vacuum coating process; and performing a cleaning step for cleaning the PDMS substrate using water so as selectively retain the Au atoms on the patterned area of the PDMS substrate; wherein the vacuum coating process is an evaporation process; wherein the evaporation process comprises: performing a first evaporation step for treating the PDMS substrate by using a 0.5 M methanol with MPTMS for 10 seconds; and performing a second evaporation step for evaporating the Au atoms at an evaporation rate of 0.5 Å/sec to form an Au film, wherein the Au film has a thickness after the second evaporation step; wherein the deposition time is smaller than or equal to 30 minutes. 2. The method of claim 1 , wherein the thickness is greater than or equal to 5 nm and smaller than or equal to 5000 nm. 3. The method of claim 2 , wherein the thickness is equal to 100 nm. 4. The method of claim 1 , wherein the PDMS substrate has a curved shape.
Metallic material, boron or silicon · CPC title
Removal of material · CPC title
Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence) · CPC title
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