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Method and apparatus for restoring properties of graphene
US9643850B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9643850-B2 |
| Application number | US-201313864732-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 17, 2013 |
| Priority date | Aug 16, 2012 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
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- Title
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Abstract
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A method and apparatus for restoring properties of graphene includes exposing the graphene to plasma having a density in a range from about 0.3*10 8 cm −3 to about 30*10 8 cm −3 when the graphene is in a ground state. The method and apparatus may be used for large-area, low-temperature, high-speed, eco-friendly, and silicon treatment of graphene.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of restoring properties of graphene, the method comprising: grounding the graphene; and exposing the graphene to plasma having a density in a range from about 0.3*10 8 cm −3 to about 30*10 8 cm −3 . 2. The method of claim 1 , wherein the density is an ion density, and exposing the graphene includes exposing the graphene to the plasma having the ion density in a range from about 1.0*10 8 cm −3 to about 10*10 8 cm −3 . 3. The method of claim 1 , wherein the plasma is an inductively coupled plasma (ICP), and the exposing the graphene further comprises: adjusting power input to an ICP electrode in order to control the density of the ICP; and exposing the graphene to the ICP. 4. The method of claim 1 , wherein the plasma is a pulse plasma, and the exposing the graphene further comprises: adjusting a pulse frequency and a duty cycle of power input to a counter electrode in order to control the density of the pulse plasma; and exposing the graphene to the pulse plasma. 5. The method of claim 1 , wherein the exposing the graphene includes generating the plasma using an inert gas. 6. The method of claim 1 , wherein the exposing the graphene includes exposing the graphene having properties including at least one of a charge neutrality point, a doping state, carriers, and conductivity.
Assignees
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Classifications
Amplitude modulation, includes pulsing · CPC title
- B82Y40/00Primary
Manufacture or treatment of nanostructures · CPC title
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
Purification or separation of fullerenes or nanotubes · CPC title
the radio frequency energy being inductively coupled to the plasma · CPC title
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- What does patent US9643850B2 cover?
- A method and apparatus for restoring properties of graphene includes exposing the graphene to plasma having a density in a range from about 0.3*10 8 cm −3 to about 30*10 8 cm −3 when the graphene is in a ground state. The method and apparatus may be used for large-area, low-temperature, high-speed, eco-friendly, and silicon treatment of graphene.
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification B82Y40/00. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue May 09 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).