Stacked inorganic-organic dielectrics for thin film capacitors in package substrates
US-2024222295-A1 · Jul 4, 2024 · US
US9642258B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9642258-B2 |
| Application number | US-201313865841-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 18, 2013 |
| Priority date | Apr 18, 2012 |
| Publication date | May 2, 2017 |
| Grant date | May 2, 2017 |
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The present invention provides novel tank circuits that are totally passive, and they are made of conductive-grade carbon nanotubes (CNTs) on substrates, and preferably flexible substrates. These components and structures contain no traditional electronic materials such as silicon, metal oxides, or ceramics, and they are totally organic. They may be used in applications where the resonant frequency and amplitude of the sensor can be modulated by a thermal, mechanical, or chemical signal, such as temperature, strain, pressure, vibration, or humidity. All-organic, and consequently combustible, passive RF sensors have unique applications for defense and consumer industries.
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We claim: 1. A tank circuit comprising: (a) a capacitor comprising a first carbon nanotube film, a second carbon nanotube film, and a dielectric layer, said dielectric layer being positioned between said first and second carbon nanotube films; and (b) an inductor operatively connected to said capacitor, said inductor comprising a coil supported on a substrate, said coil comprising a third carbon nanotube film directly on said substrate. 2. The tank circuit of claim 1 , said first and second carbon nanotube films each having respective resistances of less than about 5 Ω/sq. 3. The tank circuit of claim 1 , said third carbon nanotube film having a resistance of less than about 5 Ω/sq. 4. The tank circuit of claim 1 , wherein said capacitor and inductor are connected in parallel. 5. The tank circuit of claim 1 , said circuit further comprising an active device. 6. The tank circuit of claim 5 , wherein said active device is selected from the group consisting of vacuum tubes, transistors, ring oscillator, inverter, amplifier, diodes, memory, micro-controller, display, analog devices, and logic devices. 7. The tank circuit of claim 1 , wherein each of said first, second, and third carbon nanotube films individually comprise less than about 5% by weight metal, based upon the total weight of the film taken as 100% by weight. 8. The tank circuit of claim 1 , wherein each of said first, second, and third carbon nanotube films individually comprise less than about 5% by weight polymer, based upon the total weight of the film taken as 100% by weight. 9. The tank circuit of claim 1 , wherein each of said first, second, and third carbon nanotube films consists essentially of said carbon nanotubes. 10. The tank circuit of claim 1 , wherein said dielectric layer is selected from the group consisting of polyimide, poly(vinylidenefluoride), dedoped polyaniline, polystyrene, polyacrylate, epoxies, epoxy acrylates, parylene, polyethylene, and poly(methyl methacrylate) layers. 11. The tank circuit of claim 1 , wherein said substrate is selected from the group consisting of polyethylene terephthalate, polyimide, FR-4, breadboard, a poly(methyl methacrylate), polyacrylate, epoxy, polyurethane, paper, polyester, and polyethylene substrates. 12. The tank circuit of claim 1 , further comprising a sensor in communication with the tank circuit. 13. The tank circuit of claim 12 , wherein said sensor is selected from the group consisting of temperature sensors, strain sensors, stress sensors, moisture sensors, blast sensors, and structural sensors. 14. The tank circuit of claim 1 , wherein each of said first, second, and third carbon nanotube films individually comprises less than about 2% by weight of inorganic material, based upon the total weight of the film taken as 100% by weight. 15. The tank circuit of claim 1 , wherein each of said first, second, and third carbon nanotube films comprises random direction carbon nanotubes.
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