Method of manufacturing optical semiconductor element

Patent metadata

Field	Value
Publication number	US-9640944-B2
Application number	US-201615223645-A
Country	US
Kind code	B2
Filing date	Jul 29, 2016
Priority date	Sep 8, 2015
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.

First claim

What is claimed is:

1. A method of manufacturing an optical semiconductor element comprising:
a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate and including a first contact layer of a first conductivity type, an active region or a light absorption region on the first contact layer, a second contact layer of a second conductivity type on the active region or the light absorption region, and a second electrode on the second contact layer is formed by dry-etching the semiconductor layer until the first contact layer is exposed;
a second step in which the substrate is exposed in a periphery of the columnar structure by dry-etching the first contact layer;
a third step in which a region including an exposed surface of the first contact layer exposed by the dry-etching and an exposed surface of the substrate is pretreated with acid or alkali;
a fourth step in which a first electrode is formed on the exposed surface of the first contact layer;
a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure, the exposed surface of the first contact layer, and the exposed surface of the substrate;
a sixth step in which a first electrode wiring connected to the first electrode and extending to the exposed surface of the substrate is formed on the interlayer insulating film, and a first electrode pad is formed on the exposed surface of the substrate; and
a seventh step in which a second electrode wiring connected to the second electrode and extending to the exposed surface of the substrate via the side surface of the columnar structure is formed on the interlayer insulating film, and a second electrode pad is formed on the exposed surface of the substrate.

2. The method of manufacturing the optical semiconductor element according to claim 1 ,
wherein the fifth step is a step in which a silicon nitride film with a film thickness of equal to or greater than 100 nm and a refraction index of equal to or greater than 1.8 is formed.

3. The method of manufacturing the optical semiconductor element according to claim 2 ,
wherein the optical semiconductor element is a surface emitting semiconductor laser element, and
wherein the semiconductor layer includes
the first contact layer of the first conductivity type,
a first semiconductor multilayer reflection mirror of the first conductivity type formed on the first contact layer,
a quantum well active layer formed on the first semiconductor multilayer reflection mirror and serving as the active region,
a second semiconductor multilayer reflection mirror of the second conductivity type formed on the quantum well active layer,
the second contact layer formed on the second semiconductor multilayer reflection on mirror, and
the second electrode formed on the second contact layer.

4. The method of manufacturing the optical semiconductor element according to claim 3 ,
wherein the first step includes a step in which a mesa structure is formed by dry-etching the semiconductor layer to expose a surface of the first semiconductor multilayer reflection mirror, and the step in which the columnar structure of the semiconductor layer is formed by the dry-etching until the first contact layer is exposed is a step in which a columnar structure of the first semiconductor multilayer reflection mirror is formed by dry-etching the first semiconductor multilayer reflection mirror until the first contact layer is exposed, and
wherein the third step is a step in which the exposed surface of the first semiconductor multilayer reflection mirror, which is exposed by the dry-etching, is further pretreated.

5. The method of manufacturing the optical semiconductor element according to claim 2 ,
wherein the optical semiconductor element is a light receiving element, and
wherein the semiconductor layer includes
the first contact layer of the first conductivity type,
a light absorption layer as the light absorption region,
the second contact layer formed on the light absorption layer, and
the second electrode formed on the second contact layer.

6. The method of manufacturing the optical semiconductor element according to claim 1 ,
wherein the optical semiconductor element is a surface emitting semiconductor laser element, and
wherein the semiconductor layer includes
the first contact layer of the first conductivity type,
a first semiconductor multilayer reflection mirror of the first conductivity type formed on the first contact layer,
a quantum well active layer formed on the first semiconductor multilayer reflection mirror and serving as the active region,
a second semiconductor multilayer reflection mirror of the second conductivity type formed on the quantum well active layer,
the second contact layer formed on the second semiconductor multilayer reflection mirror, and
the second electrode formed on the second contact layer.

7. The method of manufacturing the optical semiconductor element according to claim 6 ,
wherein the first step includes a step in which a mesa structure is formed by dry-etching the semiconductor layer to expose a surface of the first semiconductor multilayer reflection mirror, and the step in which the columnar structure of the semiconductor layer is formed by the dry-etching until the first contact layer is exposed is a step in which a columnar structure of the first semiconductor multilayer reflection mirror is formed by dry-etching the first semiconductor multilayer reflection mirror until the first contact layer is exposed, and
wherein the third step is a step in which the exposed surface of the first semiconductor multilayer reflection mirror, which is exposed by the dry-etching, is further pretreated.

8. The method of manufacturing the optical semiconductor element according to claim 1 ,
wherein the optical semiconductor element is a light receiving element, and
wherein the semiconductor layer includes
the first contact layer of the first conductivity type,
a light absorption layer as the light absorption region,
the second contact layer formed on the light absorption layer, and
the second electrode formed on the second contact layer.

Assignees

• Fuji Xerox Co Ltd

Inventors

• Jogan Naoki
• Sakurai Jun
• Murakami Akemi
• Kondo Takashi
• Takeda Kazutaka
• Hayakawa Junichiro

Classifications

• H01S5/04256

  characterised by the configuration · CPC title

• H01S2301/176

  Specific passivation layers on surfaces other than the emission facet · CPC title

• H01S5/18313

  by oxidizing at least one of the DBR layers · CPC title

• H01S5/04257

  having positive and negative electrodes on the same side of the substrate · CPC title

• H01S5/06226

  Modulation at ultra-high frequencies · CPC title