Organic light emitting device manufacturing method using shadow mask and organic light emitting device manufactured thereby

Patent metadata

Field	Value
Publication number	US-9640776-B2
Application number	US-201414647121-A
Country	US
Kind code	B2
Filing date	Jan 14, 2014
Priority date	Mar 7, 2013
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

The present inventions relates to an organic light emitting device capable of decreasing a leakage current, and more particularly, to an organic light emitting device manufacturing method and an organic light emitting device using the same, which can decrease a leakage current, by flattening a lower electrode in order to decrease a leakage current of the lower electrode deposited through a shadow mask.

First claim

The invention claimed is:

1. A method of manufacturing an organic light emitting device, comprising:
preparing a substrate;
providing a shadow mask on the substrate;
depositing a lower electrode on the substrate having the shadow mask to form a lower electrode layer;
flattening the lower electrode layer;
depositing an organic material on the flattened lower electrode layer to form an organic layer; and
depositing an upper electrode on the organic layer to form an upper electrode layer;
wherein the flattening is performed by both thermal treatment and plasma treatment simultaneously; and
the thermal treatment is performed at 380° C.; and
the plasma treatment is performed by oxygen plasma treatment with the condition of a power 150 (W), O 2 flow 50 (sccm), pressure 20 (mtorr), and time 90 (sec).

2. The method of claim 1 , further comprising depositing an insulating film on the flattened lower electrode layer.

3. The method of claim 2 , wherein the insulating film is any one selected from among PI (Polyimide), Al2O3, SiO2 and SiNx insulating films.

4. The method of claim 1 , wherein the lower electrode layer is an ITO (Indium Tin Oxide) film layer.

5. An organic light emitting device manufactured by the method of claim 1 and having reduced leakage current.

Assignees

• Korea Ind Tech Inst

Inventors

• Choi Bum Ho
• Lee Jong Ho

Classifications

• C23C14/086

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

• C23C14/584

  Non-reactive treatment · CPC title

• C23C14/5853

  Oxidation · CPC title

• H10K50/822

  characterised by their shape · CPC title

• C23C14/042 Primary

  using masks · CPC title