Sense amplifier including a single-transistor amplifier and level shifter and methods therefor
US-2016133320-A1 · May 12, 2016 · US
Method for manufacturing magnetic memory
US9640756B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9640756-B2 |
| Application number | US-201514808347-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2015 |
| Priority date | Mar 11, 2015 |
| Publication date | May 2, 2017 |
| Grant date | May 2, 2017 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
According to one embodiment, a method for manufacturing a magnetic memory is disclosed. The method includes forming a magnetoresistive element on a substrate. The method further includes measuring an electrical characteristic of the magnetoresistive element, and applying a voltage to the magnetoresistive element which the electrical characteristic is measured.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a magnetic memory, the method comprising: forming a magnetoresistive element on a substrate; measuring an electrical characteristic of the magnetoresistive element; determining whether the electrical characteristic of the magnetoresistive element is defective or not; and applying a voltage to the magnetoresistive element when the electrical characteristic is determined as being defective, and not applying a voltage to the magnetoresistive element when the electrical characteristic is determined as not defective. 2. The method according to claim 1 , wherein the measuring the electrical characteristic of the magnetoresistive element is performed in a state in which the magnetoresistive element is on the substrate. 3. The method according to claim 1 , wherein the applying the voltage to the magnetoresistive element is performed in a state in which the magnetoresistive element is on the substrate. 4. The method according to claim 1 , further comprising measuring an electrical characteristic of the magnetoresistive element again, after the voltage is applied to the magnetoresistive element. 5. The method according to claim 4 , further comprising packaging a chip including the magnetoresistive element to which the voltage is applied. 6. The method according to claim 5 , further comprising measuring an electrical characteristic of the packaged chip by burn-in test. 7. The method according to claim 6 , wherein the burn-in test includes applying a voltage which is greater than or equal to 0.3 V and less than or equal to 0.4 V. 8. The method according to claim 7 , wherein an application time of the voltage which is greater than or equal to 0.3 V and less than or equal to 0.4 V is one hour or longer. 9. The method according to claim 1 , wherein the measuring the electrical characteristic of the magnetoresistive element is performed to a chip that is cut out from the substrate. 10. The method according to claim 9 , wherein the applying the voltage to the magnetoresistive element is performed to the chip. 11. The method according to claim 10 , wherein the measuring the electrical characteristic of the chip is performed by burn-in test. 12. The method according to claim 1 , wherein the applying the voltage to the magnetoresistive element is performed to a chip that is cut out from the substrate. 13. The method according to claim 12 , wherein the measuring the electrical characteristic of the chip is performed by burn-in test. 14. The method according to claim 1 , wherein the voltage is lower than a breakdown voltage of the magnetoresistive element. 15. The method according to claim 1 , wherein the voltage is higher than a write voltage of the magnetoresistive element. 16. The method according to claim 1 , wherein the voltage is greater than 0.5 V and less than 0.9 V. 17. The method according to claim 1 , wherein an application time of the voltage is 10 nanoseconds or more. 18. The method according to claim 1 , wherein the magnetoresistive element includes a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. 19. The method according to claim 1 , wherein the applying the voltage to the magnetoresistive element comprises bringing the electrical characteristic determined as being defective into a normal electrical characteristic.
Assignees
Inventors
Classifications
Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title
Electricity · mapped topic
- H01L43/12Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9640756B2 cover?
- According to one embodiment, a method for manufacturing a magnetic memory is disclosed. The method includes forming a magnetoresistive element on a substrate. The method further includes measuring an electrical characteristic of the magnetoresistive element, and applying a voltage to the magnetoresistive element which the electrical characteristic is measured.
- Who is the assignee on this patent?
- Aikawa Hisanori, Iwayama Masayoshi, Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H01L43/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 02 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).