Double guard ring edge termination for silicon carbide devices

Patent metadata

Field	Value
Publication number	US-9640609-B2
Application number	US-3721108-A
Country	US
Kind code	B2
Filing date	Feb 26, 2008
Priority date	Feb 26, 2008
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

Edge termination structures for semiconductor devices are provided including a plurality of spaced apart concentric floating guard rings in a semiconductor layer that at least partially surround a semiconductor junction. The spaced apart concentric floating guard rings have a highly doped portion and a lightly doped portion. Related methods of fabricating devices are also provided herein.

First claim

That which is claimed is:

1. An edge termination structure for a semiconductor device, comprising:
a plurality of spaced apart concentric floating guard rings in a silicon carbide semiconductor layer that at least partially surrounds a semiconductor junction in the edge termination structure,
wherein the plurality of spaced apart concentric floating guard rings each have a highly doped portion and a lightly doped portion;
wherein the highly doped portion and the lightly doped portion of each of the plurality of spaced apart concentric floating guard rings have an associated dopant concentration; and
wherein the lightly doped portion of the floating guard rings has at least two portions, a first portion having a first depth no greater than a depth of the highly doped portion of the floating guard rings and having a first doping concentration and a second portion having a second depth greater than the depth of the highly doped portion of the floating guard rings, extending beneath the highly doped portion, having a planar bottom surface and one sidewall that is aligned with a sidewall of the highly doped portion and having a second doping concentration, greater than the first doping concentration.

2. The edge termination structure of claim 1 , wherein the semiconductor device comprises a silicon carbide semiconductor device, the semiconductor layer comprises a silicon carbide layer and the semiconductor junction comprises a silicon carbide-based semiconductor junction.

3. The edge termination structure of claim 2 , wherein the highly doped portion of each of the plurality of spaced apart concentric floating guard rings extend a first distance into the silicon carbide layer and wherein the lightly doped portion of each of the plurality of spaced apart concentric floating guard rings extend a second distance into the silicon carbide layer.

4. The edge termination structure of claim 3 , wherein the first distance and the second distance are the same.

5. The edge termination structure of claim 3 , wherein the first distance is less than the second distance.

6. The edge termination structure of claim 5 , wherein the first distance is about 0.5 μm and the second distance is about 0.8 μm.

7. The edge termination structure of claim 6 , wherein the lightly doped portion of the floating guard rings has a first doping concentration in a portion adjacent the highly doped portion of the floating guard rings and a second doping concentration, greater than the first doping concentration, beneath the highly doped portion of the floating guard rings.

8. The edge termination structure of claim 7 , wherein the first doping concentration is about 1.0×10 17 and the second doping concentration is about 1.4×10 17 .

9. The edge termination structure of claim 2 , wherein the highly doped portion of each of the plurality of spaced apart concentric floating guard rings have a dopant concentration of from about 5.0×10 18 cm −3 to about 1.0×10 20 cm −3 and wherein the lightly doped portion of each of the plurality of spaced apart concentric floating guard rings have a dopant concentration of from about 5.0×10 16 cm −3 to about 5.0×10 17 cm −3 .

10. The edge termination structure of claim 1 , wherein the highly doped portion and the lightly doped portion of the plurality of spaced apart concentric floating guard rings extend a distance of from about 0.3 μm to about 0.8 μm into the silicon carbide layer.

11. The edge termination structure of claim 1 , wherein the floating guard rings are one of uniformly spaced, non-uniformly spaced and a combination of uniformly and non-uniformly spaced.

12. The edge termination structure of claim 1 , wherein the plurality of spaced apart concentric floating guard rings comprises from about 2 to about 100 guard rings.

13. The edge termination structure of claim 2 , wherein the silicon carbide layer is an n-type silicon carbide layer and the plurality of spaced apart concentric floating guard rings are p-type silicon carbide.

14. The edge termination structure of claim 2 , wherein the silicon carbide layer is a p-type silicon carbide layer and the plurality of spaced apart concentric floating guard rings are n-type silicon carbide.

15. The edge termination structure of claim 1 , wherein the highly doped portion of each of the plurality of spaced apart concentric floating guard rings is doped with Aluminum and wherein the lightly doped portion of each of the plurality of spaced apart concentric floating guard rings is doped with Boron.

16. The edge termination structure of claim 1 , wherein the plurality of spaced apart concentric floating guard rings are non-uniformly spaced.

17. The edge termination structure of claim 1 , further comprising an oxide insulating layer on the plurality of spaced apart concentric floating guard rings, wherein an oxide-semiconductor interface where the oxide insulating layer and the plurality of spaced apart concentric floating guard rings meet is expected to have from about 1.0×10 12 to about 2.0×10 12 cm −3 of positive charge.

18. An edge termination structure for a semiconductor device, comprising:
at least two spaced apart concentric floating guard rings in a silicon carbide semiconductor layer, the at least two spaced apart concentric floating guard rings configured to reduce electric field breakdown of the device and each of the at least two spaced apart concentric floating guard rings having a highly doped portion and a lightly doped portion,
wherein the highly doped portion and the lightly doped portion of each of the at least two spaced apart concentric floating guard rings have an associated dopant concentration; and
wherein the lightly doped portion of the floating guard rings has at least two portions, a first portion having a first depth no greater than a depth of the highly doped portion of the floating guard rings and having a first doping concentration and a second portion having a second depth greater than the depth of the highly doped portion of the floating guard rings, extending beneath the highly doped portion, having at least one sidewall that is aligned with a sidewall of the highly doped portion and having a second doping concentration, greater than the first doping concentration.

19. The edge termination structure of claim 18 , wherein the at least two spaced apart concentric floating guard rings at least partially surrounds the main semiconductor junction.

20. The edge termination structure of claim 19 , wherein the semiconductor device comprises a silicon carbide semiconductor device, the semiconductor layer comprises a silicon carbide layer and the semiconductor junction comprises a silicon carbide-based semiconductor junction.

21. The edge termination structure of claim 20 , wherein the highly doped portion of each of the at least two spaced apart concentric floating guard rings extend a first distance into the silicon carbide layer and wherein the lightly doped portion of each of the at least two spaced apart concentric floating guard rings extend a second distance into the silicon carbide layer.

22. The edge termination structure of claim 20 , wherein the highly doped portion of each of the at least two spaced apart concentric floating guard rings have a dopant concentration of from about 5.0×10 18 cm −3 to about 1.0×10 20 cm −3 and wherein the lightly doped portion of each of the at least two spaced apart concentric floating guard rings have a dopant concentration of from about 5.0×10 16 cm −3 to about 5.0×10

Assignees

• Zhang Qingchun
• Jonas Charlotte
• Agarwal Anant K
• Cree Inc

Inventors

• Zhang Qingchun
• Jonas Charlotte
• Agarwal Anant K

Classifications

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D64/64

  Electrodes comprising a Schottky barrier to a semiconductor · CPC title

• H10D62/10

  Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies · CPC title

• H10D8/60 Primary

  Schottky-barrier diodes · CPC title

• H01L29/0619 Primary

  Electricity · mapped topic