Electricity storage device and method for manufacturing electricity storage device

US9640606B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9640606-B2
Application numberUS-201514663266-A
CountryUS
Kind codeB2
Filing dateMar 19, 2015
Priority dateMar 24, 2014
Publication dateMay 2, 2017
Grant dateMay 2, 2017

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

An electricity storage device includes a first electrode, a second electrode, an electricity storage layer, and a p-type semiconductor layer. The electricity storage layer is placed between the first electrode and the second electrode. The electricity storage layer contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer is placed between the electricity storage layer and the second electrode. The n-type semiconductor particles contain at least one of a titanium-niobium composite oxide and a titanium-tantalum composite oxide.

First claim

Opening claim text (preview).

What is claimed is: 1. An electricity storage device comprising: a first electrode; a second electrode; an electricity storage layer which is placed between the first electrode and the second electrode and which contains a mixture of an insulating material and n-type semiconductor particles; and a p-type semiconductor layer placed between the electricity storage layer and the second electrode, wherein the n-type semiconductor particles contain at least one of the group consisting of a titanium-niobium composite oxide and a titanium-tantalum composite oxide, the n-type semiconductor particles have an average size of 1 nm to 20 nm, and the average size is an average of value a of fifty n-type semiconductor particles, where value αof one of the fifty n-type semiconductor particles is 2×(S/3.14) 1/2 and S is an area of the one of the fifty n-type semiconductor particles in an image observed with an electron microscope. 2. The electricity storage device according to claim 1 , wherein the n-type semiconductor particles contain the titanium-niobium composite oxide as an essential component. 3. The electricity storage device according to claim 1 , wherein the n-type semiconductor particles contain a titanium-niobium composite oxide, the sum of the content of titanium, the content of niobium, and the content of oxygen in the titanium-niobium composite oxide is 80 atomic percent or more. 4. The electricity storage device according to claim 1 , wherein the n-type semiconductor particles contain the titanium-tantalum composite oxide as an essential component. 5. The electricity storage device according to claim 1 , wherein the n-type semiconductor particles contain a titanium-tantalum composite oxide, the sum of the content of titanium, the content of tantalum, and the content of oxygen in the titanium-tantalum composite oxide is 80 atomic percent or more. 6. The electricity storage device according to claim 1 , wherein the first or second electrode is made of at least one selected from the group consisting of silver, copper, gold, iron, aluminum, nickel, titanium, chromium, and molybdenum; an alloy of any selective combination of these metals; or a conductive oxide. 7. The electricity storage device according to claim 1 , wherein the p-type semiconductor layer contains a p-type oxide semiconductor. 8. The electricity storage device according to claim 7 , wherein the p-type oxide semiconductor is nickel oxide or a copper-aluminum oxide. 9. The electricity storage device according to claim 1 , wherein the insulating material is an insulating resin or an inorganic insulator. 10. The electricity storage device according to claim 1 , wherein the insulating material is silicone or silicon dioxide.

Assignees

Inventors

Classifications

  • being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

  • using solutions · CPC title

  • using a liquid · CPC title

  • characterised by treatments done after the formation of the materials · CPC title

  • Solid electrolytes, e.g. gels; Additives therein · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9640606B2 cover?
An electricity storage device includes a first electrode, a second electrode, an electricity storage layer, and a p-type semiconductor layer. The electricity storage layer is placed between the first electrode and the second electrode. The electricity storage layer contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer is placed between t…
Who is the assignee on this patent?
Panasonic Ip Man Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01M14/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 02 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).