Semiconductor device with self-aligned air gap and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-9640426-B2
Application number	US-201514604438-A
Country	US
Kind code	B2
Filing date	Jan 23, 2015
Priority date	Dec 28, 2012
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A method for fabricating a semiconductor device includes forming a plurality of semiconductor structures over a substrate, forming an interlayer dielectric layer over the semiconductor structures, etching the interlayer dielectric layer, and defining open parts between the semiconductor structures to expose a surface of the substrate, forming sacrificial spacers on sidewalls of the open parts, forming conductive layer patterns in the open parts, and causing the conductive layer patterns and the sacrificial spacers to reach each other, and defining air gaps on the sidewalls of the open parts.

First claim

What is claimed is:

1. A method for fabricating a semiconductor device, comprising:
forming semiconductor structures over a substrate;
defining open parts between the semiconductor structures;
forming recessed sacrificial spacers on sidewalls of the open parts, wherein the recessed sacrificial spacers include a first silicidable substance;
forming first plugs which comprise a second silicidable substance, in the open parts, in such a way as to be recessed;
forming a silicidation preventing layer to cover the first plugs and the recessed sacrificial spacers;
forming second plugs over the silicidation preventing layer; and
causing the first silicidable substance and the second silicidable substance to react with each other, thereby defining air gaps on the sidewalls of the open parts.

2. The method according to claim 1 , wherein the first silicidable substance comprises a silicon-containing layer.

3. The method according to claim 1 , wherein the second silicidable substance comprises a silicidable metal layer.

4. The method according to claim 1 , wherein the defining of air gaps comprises:
annealing and silicidating the first silicidable substance and the second silicidable substance.

5. The method according to claim 1 , wherein the silicidation preventing layer comprises a metal nitride.

6. The method according to claim 1 , wherein, after the defining of open parts, the method further comprises:
forming dielectric spacers on the sidewalls of the open parts.

7. The method according to claim 1 , wherein the semiconductor structures comprise bit line structures, and stack structures of the first plugs, the silicidation preventing layer and the second plugs comprise storage node contact plugs.

8. The method according to claim 1 , wherein the defining of air gaps is performed after the forming of the silicidation preventing layer.

Assignees

• Sk Hynix Inc
• Sk Hynic Inc

Inventors

• Rho Il-Cheol
• Lee Jong-Min

Classifications

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H10W20/064

  by modifying the conductivity of conductive parts, e.g. by alloying · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W10/021 Primary

  of air gaps · CPC title

• H10W10/20

  Air gaps · CPC title