Acid mist suppression in copper electrowinning
US-12098474-B2 · Sep 24, 2024 · US
US9637833B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9637833-B2 |
| Application number | US-201213726251-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 24, 2012 |
| Priority date | Dec 22, 2011 |
| Publication date | May 2, 2017 |
| Grant date | May 2, 2017 |
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A copper plating solution which contains compounds with the structure —X—S—Y— where X and Y are, independently of each other, atoms selected from a group consisting of hydrogen, carbon, sulfur, nitrogen, and oxygen, and X and Y can be the same only if they are carbon atoms and aliphatic semialdehydes. By using this copper electroplating solution it is possible to form good filled vias without worsening the appearance of the plating.
Opening claim text (preview).
What is claimed is: 1. A method of copper electroplating comprising: a) providing a base comprising vias; b) providing an acid copper electroplating solution comprising copper sulfate, copper cyanide or copper pyrophosphate, 10 g/L to 400 g/L sulfuric acid, 1.0×10 −4 to 1.0×10 −1 mol/L semialdehyde succinate, and a compound selected from the group consisting of: M-SO 3 —(CH 2 ) a —S—(CH 2 ) b —SO 3 -M; (1) M-SO 3 —(CH 2 ) a —O—CH 2 —S—CH 2 —O—(CH 2 ) b —SO 3 -M; (2) M-SO 3 —(CH 2 ) a —S—S —(CH 2 ) b —SO 3 -M; (3) M-SO 3 —(CH 2 ) a —O—CH 2 —S—S —CH 2 —O—(CH 2 ) b —SO 3 -M; (4) M-SO 3 —(CH 2 ) a —S—C(═S)—S—(CH 2 ) b —SO 3 -M; (5) M-SO 3 —(CH 2 ) a —O—CH 2 —S—C(═S)—S—CH 2 —O—(CH 2 ) b —SO 3 -M; (6) A-S—(CH 2 ) a —SO 3 -M; and (7) A-S—CH 2 —O—(CH 2 ) a —SO 3 -M, (8) wherein a and b are integers from 3 to 8, M is hydrogen or an alkali metal element, and A is a hydrogen atom, (C 1 —C 10 )alkyl group, aryl group, a chain or cyclic amine compound formed from 1-6 nitrogen atoms, 1-20carbon atoms and a plurality of hydrogen atoms or a heterocyclic compound formed from 1-2 sulfur atoms, 1-6 nitrogen atoms, 1-20 carbon atoms, and a plurality of hydrogen atoms; c) immersing the base comprising the vias in the acid copper electroplating solution; and d) electroplating copper on the base and filling the vias with copper. 2. The method of claim 1 , wherein the semialdehyde succinate is in amounts of 1.0×10 −3 to 1.0×10 −2 mol/L.
Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title
the interconnections being through-semiconductor vias · CPC title
characterised by the filling method or the material of the conductive fill · CPC title
Metal filled via · CPC title
Plated through-holes or plated blind vias filled with insulating material · CPC title
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