Interfused nanocrystals and method of preparing the same

Patent metadata

Field	Value
Publication number	US-9637682-B2
Application number	US-201514614475-A
Country	US
Kind code	B2
Filing date	Feb 5, 2015
Priority date	Nov 11, 2004
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

Disclosed herein is a nanocrystal comprising a core comprising a first nanocrystal material, the first nanocrystal material including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; a shell being disposed upon a surface of the core and comprising a second nanocrystal material, the second nanocrystal material being different from the first nanocrystal material and including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; and an alloy interlayer disposed between the core and the shell, wherein the emission peak wavelength of the nanocrystal is shifted into a shorter wavelength than the emission peak wavelength of the core.

First claim

What is claimed is:

1. A nanocrystal comprising:
a core comprising a first nanocrystal material, the first nanocrystal material including a Group II-VI semiconductor compound or a Group III-V semiconductor compound;
a shell being disposed upon a surface of the core and comprising a second nanocrystal material, the second nanocrystal material being different from the first nanocrystal material and including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; and
an alloy interlayer disposed between the core and the shell, wherein the emission peak wavelength of the nanocrystal is shifted into a shorter wavelength than the emission peak wavelength of the core.

2. The nanocrystals as set forth in claim 1 , wherein the alloy interlayer is formed at an interface between the core and the shell.

3. The nanocrystals as set forth in claim 1 , wherein the alloy interlayer is a gradient alloy layer.

4. The nanocrystals as set forth in claim 1 , wherein the alloy interlayer is formed by diffusion of the first nanocrystal material into the shell.

5. The nanocrystals as set forth in claim 1 , wherein the alloy interlayer is formed by diffusion of the second nanocrystal material into the core.

6. The nanocrystals as set forth in claim 1 , wherein the alloy interlayer is formed by heating the core having the shell on the surface thereof to a temperature of 120 to 460° C. for a time of five minutes or longer.

7. The nanocrystals as set forth in claim 1 , wherein the first nanocrystal comprises the Group II-VI semiconductor compound being selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, or a combination thereof.

8. The nanocrystals as set forth in claim 1 , wherein the first nanocrystal comprises the Group III-V semiconductor compound being selected from InP, InN, InAs, GaN, GaP, GaAs, or a combination thereof.

9. The nanocrystals as set forth in claim 1 , wherein the second nanocrystal comprises the Group II-VI semiconductor compound being selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, or a combination thereof.

10. The nanocrystals as set forth in claim 1 , wherein the second nanocrystal comprises the Group III-V semiconductor compound being selected from InP, InN, InAs, GaN, GaP, GaAs, or a combination thereof.

11. The nanocrystals as set forth in claim 1 , wherein a shape of each of the nanocrystals is selected from the group consisting of spheres, tetrahedra, cylinders, rods, triangles, discs, tripods, tetrapods, cubes, boxes, stars, and tubes.

12. The nanocrystals as set forth in claim 1 , wherein luminous efficiency of the nanocrystal is higher than that of the core.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jun Shin Ae
• Jang Eun Joo
• Choi Seong Jae

Classifications

• C01P2002/84

  by UV- or VIS- data · CPC title

• H01L51/502

  Electricity · mapped topic

• C01P2004/64

  Nanometer sized, i.e. from 1-100 nanometer · CPC title

• C01P2004/04

  obtained by TEM, STEM, STM or AFM · CPC title

• C01P2004/80

  Particles consisting of a mixture of two or more inorganic phases · CPC title