Pillar array structure with uniform and high aspect ratio nanometer gaps

Patent metadata

Field	Value
Publication number	US-9636675-B2
Application number	US-201514697095-A
Country	US
Kind code	B2
Filing date	Apr 27, 2015
Priority date	Nov 26, 2014
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A technique related to sorting entities is provided. An inlet is configured to receive a fluid, and an outlet is configured to exit the fluid. A nanopillar array, connected to the inlet and the outlet, is configured to allow the fluid to flow from the inlet to the outlet. The nanopillar array includes nanopillars arranged to separate entities by size. The nanopillars are arranged to have a gap separating one nanopillar from another nanopillar. The gap is constructed to be in a nanoscale range.

First claim

What is claimed is:

1. An apparatus comprising:
an inlet configured to receive a fluid;
an outlet configured to exit the fluid; and
a nanopillar array connected to the inlet and the outlet, the nanopillar array configured to allow the fluid to flow from the inlet to the outlet;
wherein the nanopillar array includes nanopillars arranged to separate entities by size;
wherein the nanopillars are arranged to have a gap separating one nanopillar from another nanopillar;
wherein the gap is constructed to be in a nanoscale range;
wherein the nanopillar array comprises an oxide layer applied on the nanopillars, the oxide layer causing the gap to be uniform along a vertical axis of the one nanopillar and the another nanopillar; and
wherein the oxide layer causes unevenness in a diameter of the nanopillars to be uniform, resulting in the gap being uniform along the vertical axis of the one nanopillar and the another nanopillar.

2. The apparatus of claim 1 , wherein the one nanopillar is to a side of the another nanopillar, such that the gap is in between.

3. The apparatus of claim 1 , wherein the gap between the one nanopillar and the another nanopillar is uniform along a vertical axis of the one nanopillar and the another nanopillar.

4. The apparatus of claim 1 , wherein the oxide layer causes a size of the gap to be as small as about 20 nanometers while the gap remains uniform.

5. The apparatus of claim 1 , wherein an increase in a thickness of the oxide layer causes a decrease in a size of the gap.

6. The apparatus of claim 1 , wherein a size of the gap is less than 100 nanometers.

7. The apparatus of claim 1 , wherein a size of the gap is less than 300 nanometers.

8. The apparatus of claim 1 , wherein a monolayer is applied to the nanopillars to reduce a size of the gap; and
wherein the gap having a reduced size is configured to separate smaller entities relative to when the monolayer is not applied to the nanopillars.

Assignees

• IBM

Inventors

• Astier Yann A
• Bruce Robert L
• Smith Joshua T
• Wang Chao
• Wunsch Benjamin H

Classifications

• B01L2300/0864

  comprising only one inlet and multiple receiving wells, e.g. for separation, splitting · CPC title

• B81C2201/0132

  Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title

• B81B2203/0361

  Tips, pillars · CPC title

• B01L2200/0652

  Sorting or classification of particles or molecules · CPC title

• G01N15/10 Primary

  Investigating individual particles · CPC title