Low noise and low power voltage-controlled oscillator (VCO) using transconductance (gm) degeneration

Patent metadata

Field	Value
Publication number	US-9634607-B2
Application number	US-201414204542-A
Country	US
Kind code	B2
Filing date	Mar 11, 2014
Priority date	Mar 11, 2014
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

Certain aspects of the present disclosure generally relate to voltage-controlled oscillators (VCOs) using a lowered or an adjustable negative transconductance (−g m ) compared to conventional VCOs. This −g m degeneration technique suppresses the noise injected into an inductor-capacitor (LC) tank of the VCO, thereby providing lower signal-to-noise ratio (SNR) for a given VCO voltage swing, lower power consumption, and decreased phase noise. One example VCO generally includes a resonant tank circuit, an active negative transconductance circuit connected with the resonant tank circuit, and a bias current circuit for sourcing or sinking a bias current through the resonant tank circuit and the active negative transconductance circuit to generate an oscillating signal. The active negative transconductance circuit includes cross-coupled transistors and an impedance connected between the cross-coupled transistors and a reference voltage.

First claim

What is claimed is:

1. A voltage controlled oscillator (VCO), comprising:
a resonant tank circuit;
an active negative transconductance circuit connected with the resonant tank circuit, comprising:
cross-coupled transistors having drains connected with the resonant tank circuit; and
an impedance connected between sources of the cross-coupled transistors and a reference voltage; and

a bias current circuit for sourcing or sinking a bias current through the resonant tank circuit and the active negative transconductance circuit to generate an oscillating signal.

2. The VCO of claim 1 , further comprising a switch configured to programmably shunt the impedance.

3. The VCO of claim 1 , wherein the cross-coupled transistors comprise n-channel metal oxide semiconductor (NMOS) field effect transistors.

4. The VCO of claim 1 , wherein a body of each of the cross-coupled transistors is connected with the reference voltage.

5. The VCO of claim 1 , wherein the impedance comprises a variable impedance.

6. The VCO of claim 1 , wherein the impedance is a resistor.

7. The VCO of claim 1 , wherein the impedance comprises an inductor.

8. The VCO of claim 1 , wherein the active negative transconductance circuit has a variable transconductance.

9. The VCO of claim 8 , wherein the variable transconductance is adjusted by varying the effective size of transistors in the active negative transconductance circuit.

10. The VCO of claim 1 , wherein the cross-coupled transistors comprise cross-coupled p-channel metal oxide semiconductor (PMOS) field effect transistors and cross-coupled n-channel metal oxide semiconductor (NMOS) field effect transistors.

11. The VCO of claim 10 , wherein the impedance is connected between the NMOS transistors and the reference voltage.

12. The VCO of claim 11 , wherein another impedance is connected between the PMOS transistors and the bias current circuit.

13. The VCO of claim 12 , further comprising at least one switch configured to programmably shunt at least one of the impedance or the other impedance.

14. The VCO of claim 12 , wherein drains of the PMOS transistors are connected with the resonant tank circuit and wherein the other impedance is connected between sources of the PMOS transistors and the bias current circuit.

15. The VCO of claim 1 , wherein the bias current circuit comprises a current mirror.

16. The VCO of claim 1 , wherein the resonant tank circuit comprises an inductor-capacitor (LC) tank circuit.

17. The VCO of claim 1 , wherein the reference voltage is an electrical ground.

18. An apparatus for wireless communications, comprising:
at least one antenna; and
at least one of a receiver configured to receive, or a transmitter configured to send, a radio frequency (RF) signal via the at least one antenna, the at least one of the receiver or the transmitter having a voltage controlled oscillator (VCO) comprising:
a resonant tank circuit;
an active negative transconductance circuit connected with the resonant tank circuit, comprising:
cross-coupled transistors having drains connected with the resonant tank circuit; and
an impedance connected between sources of the cross-coupled transistors and a reference voltage; and

a bias current circuit for sourcing or sinking a bias current through the resonant tank circuit and the active negative transconductance circuit to generate an oscillating signal.

19. The apparatus of claim 18 , wherein the VCO further comprises a switch configured to programmably shunt the impedance.

20. The apparatus of claim 18 , wherein the active negative transconductance circuit has a variable transconductance adjusted by varying the effective size of transistors in the active negative transconductance circuit.

21. The apparatus of claim 18 , wherein a body of each of the cross-coupled transistors is connected with the reference voltage.

Assignees

• Qualcomm Inc

Inventors

• Nguyen Thinh Cat
• Yang Jeongsik
• Brockenbrough Roger Thomas
• Bicakci Ara
• Savla Anup
• Wang Shen

Classifications

• H03B5/1287

  the parameter being a quality factor, e.g. Q factor of the frequency determining element · CPC title

• H04B1/40

  Circuits · CPC title

• H03B5/1262

  the means comprising switched elements · CPC title

• H03B5/1215 Primary

  the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair · CPC title

• H03B5/1212 Primary

  the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair · CPC title