Method and system for providing magnetic junctions including Heusler multilayers

Patent metadata

Field	Value
Publication number	US-9634241-B2
Application number	US-201514809113-A
Country	US
Kind code	B2
Filing date	Jul 24, 2015
Priority date	Aug 6, 2014
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

First claim

We claim:

1. A magnetic junction residing on a substrate and usable in a magnetic device comprising:
a free layer;
a nonmagnetic spacer layer; and
a reference layer, the nonmagnetic spacer layer residing between reference layer and the free layer, at least one of the free layer and the reference layer including at least one Heusler multilayer, each of the at least one Heusler multilayer including a plurality of Heusler layers sharing at least one interface, the plurality of Heusler layers including a plurality of Heusler alloys, having a plurality of lattice parameters and having a plurality of coefficients of thermal expansion;
wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

2. The magnetic junction of claim 1 wherein the free layer includes a Heusler multilayer of the at least one Heusler multilayer.

3. The magnetic junction of claim 1 wherein the reference layer includes a Heusler multilayer of the at least one Heusler multilayer.

4. The magnetic junction of claim 1 wherein the at least one of the free layer and the reference layer that includes the at least one Heuser multilayer is free of hexagonal close packed magnetic materials and free of face-centered cubic magnetic materials having a (111) orientation.

5. The magnetic junction of claim 3 wherein the reference layer is a synthetic antiferromagnetic including a first magnetic layer, a second magnetic layer and a nonmagnetic body centered cubic (BCC) layer between the first magnetic layer and the second magnetic layer, the first magnetic layer including the first Heusler multilayer, the second magnetic layer including a second Heusler multilayer of the at least one Heusler multilayer.

6. The magnetic junction of claim 3 further comprising:
a polarization enhancement layer between the reference layer and the nonmagnetic spacer layer.

7. The magnetic junction of claim 1 wherein the at least one of the free layer and the reference layer consists of the at least one Heusler multilayer.

8. The magnetic junction of claim 1 wherein the plurality of lattice parameters and the plurality of coefficients of thermal expansion differ.

9. The magnetic junction of claim 8 wherein the plurality of coefficients of thermal expansion are configured such that a difference between lattice parameters of adjoining Heusler layers decreases with increasing temperature.

10. The magnetic junction of claim 8 wherein the plurality of coefficients of thermal expansion are configured such that a difference between lattice parameters of adjoining Heusler layers increases with increasing temperature.

11. The magnetic junction of claim 1 wherein the free layer includes a Heusler multilayer of the at least one Heusler multilayer, the plurality of Heusler layers in the Heusler multilayer have a plurality of thicknesses such that a free layer perpendicular magnetic anisotropy increases with increasing distance from the nonmagnetic spacer layer.

12. The magnetic junction of claim 1 further comprising:
an additional nonmagnetic spacer layer, the free layer being between the additional nonmagnetic spacer layer and the nonmagnetic spacer layer; and
an additional reference layer, the additional nonmagnetic spacer layer being between the free layer and the additional reference layer.

13. The magnetic junction of claim 12 wherein the additional reference layer includes an additional Heusler multilayer, the additional Heusler multilayer including an additional plurality of Heusler layers sharing at least one additional interface, the additional plurality of Heusler layers including an additional plurality of Heusler alloys, having an additional plurality of lattice parameters and having an additional plurality of coefficients of thermal expansion.

14. A magnetic memory residing on a substrate, the magnetic memory comprising:
a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a free layer, a nonmagnetic spacer layer and a reference layer, the nonmagnetic spacer layer residing between reference layer and the free layer, at least one of the free layer and the reference layer including at least one Heusler multilayer, each of the at least one Heusler multilayer including a plurality of Heusler layers sharing at least one interface, the plurality of Heusler layers including a plurality of Heusler alloys, having a plurality of lattice parameters and having a plurality of coefficients of thermal expansion, the at least one magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and
a plurality of bit lines coupled with the plurality of magnetic storage cells.

15. A method for providing a magnetic junction residing on a substrate and usable in a magnetic device, the method comprising:
providing a free layer;
providing a nonmagnetic spacer layer; and
providing a reference layer, the nonmagnetic spacer layer residing between reference layer and the free layer, at least one of the free layer and the reference layer including at least one Heusler multilayer, each of the at least one Heusler multilayer including a plurality of Heusler layers sharing at least one interface, the plurality of Heusler layers including a plurality of Heusler alloys, having a plurality of lattice parameters and having a plurality of coefficients of thermal expansion, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

16. The method of claim 15 wherein the at least one of the free layer and the reference layer that includes the at least one Heusler multilayer is free of hexagonal close packed magnetic materials and free of face-centered cubic magnetic materials having a (111) orientation.

17. The method of claim 16 wherein the reference layer is a synthetic antiferromagnetic including a first magnetic layer, a second magnetic layer and a nonmagnetic body centered cubic (BCC) layer between the first magnetic layer and the second magnetic layer, the first magnetic layer including the first Heusler multilayer, the second magnetic layer including a second Heusler multilayer of the at least one Heusler multilayer.

18. The method of claim 15 wherein the free layer includes a Heusler multilayer of the at least one Heusler multilayer; and
wherein the plurality of coefficients of thermal expansion are configured such that a difference between lattice parameters of adjoining Heusler layers increases with increasing temperature.

19. The method of claim 15 wherein the free layer includes a Heusler multilayer of the at least one Heusler multilayer, the plurality of Heusler layers in the Heusler multilayer have a plurality of thicknesses such that a free layer perpendicular magnetic anisotropy increases with increasing distance from the nonmagnetic spacer layer.

20. The method of claim 15 further comprising:
providing an additional nonmagnetic spacer layer, the free layer being between the additional nonmagnetic spacer layer and the nonmagnetic spacer layer; and
providing an additional reference layer, the additional nonmagnetic spacer layer being between the free layer and the additional reference layer, the addit

Assignees

• Samsung Electronics Co Ltd

Inventors

• Butler William H
• Munira Kamaram
• Chepulskyy Roman
• Apalkov Dmytro

Classifications

• H01L43/08 Primary

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H10N50/85

  Materials of the active region · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title