Overvoltage protection circuit, power supply device, liquid crystal display device, electronic device and television set

Patent metadata

Field	Value
Publication number	US-9632374-B2
Application number	US-201214129582-A
Country	US
Kind code	B2
Filing date	Jun 11, 2012
Priority date	Jul 1, 2011
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

An overvoltage protection portion ( 14 ) includes a transistor (P 1 ) that achieves continuity with an input voltage (VIN) used as an output voltage (VOUT) to an internal circuit when the input voltage (VIN) applied to an external terminal (T 1 ) is not in an overvoltage state. The overvoltage protection portion ( 14 ) also includes: a transistor (P 2 ) operating as a short circuit that short-circuits the source and the gate of the transistor (P 1 ) and that interrupts the input voltage (VIN) when the input voltage (VIN) is in the overvoltage state; a resistor (R 2 ); and a Zener diode (ZD 1 ). The overvoltage protection portion ( 14 ) also includes: a transistor (NTr 1 ) operating as a bypass circuit that supplies a constant output voltage (VOUT) from the external terminal (T 1 ) to the internal circuit when the input voltage (VIN) is brought into the overvoltage state; a resistor (R 3 ); and a Zener diode (ZD 2 ).

First claim

The invention claimed is:

1. An overvoltage protection circuit comprising:
a first P-channel field-effect transistor including a source connected to an input terminal and including a drain connected to an internal circuit;
a first resistor connected between a gate of the first P-channel field-effect transistor and a ground end;
a short circuit operable to short-circuit the source and the gate of the first transistor while an application voltage of the input terminal exceeds a predetermined threshold value; and
a bypass circuit operable to supply a constant voltage from the input terminal to the internal circuit while the voltage of the input terminal exceeds the threshold value,
wherein the short circuit includes:
a second P-channel field-effect transistor including a source connected to the input terminal and including a drain is connected to the gate of the first P-channel field-effect transistor;
a second resistor connected between a gate of the second P-channel field-effect transistor and the input terminal; and
a first Zener diode connected between the gate of the second P-channel field-effect transistor and the ground end,
wherein the bypass circuit includes:
an NPN transistor whose collector is connected to the input terminal and whose emitter is connected to the internal circuit;
a second Zener diode which is connected between a base of the NPN transistor and the ground end; and
a third resistor which is connected between the base of the NPN transistor and the input terminal, and
wherein each of the first P-channel field-effect transistor, the second P-channel field-effect transistor and the NPN transistor is high-voltage resistant as compared with an element of the internal circuit.

2. A semiconductor device that integrates the overvoltage protection circuit of claim 1 .

3. A liquid crystal display device comprising: the power supply circuit including the semiconductor device of claim 2 .

Assignees

• Murakami Kazuhiro
• Rohm Co Ltd

Inventors

• Murakami Kazuhiro

Classifications

• G02F1/136204 Primary

  Arrangements to prevent high voltage or static electricity failures · CPC title

• H02H9/043

  Protection of over-voltage protection device by short-circuiting · CPC title

• H01L27/0251

  Electricity · mapped topic

• H03K19/00315 Primary

  in field-effect transistor circuits · CPC title

• H10D89/601

  for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs · CPC title