Magnetic layer with grain refining agent

Patent metadata

Field	Value
Publication number	US-9632149-B2
Application number	US-201314052179-A
Country	US
Kind code	B2
Filing date	Oct 11, 2013
Priority date	Nov 2, 2005
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

A magnetic sensor includes a magnetic layer comprising magnetic material and a grain refining agent. The magnetic layer having a grain-refined magnetic layer surface. A layer adjacent the magnetic layer has a layer surface that conforms to the grain-refined magnetic layer surface.

First claim

What is claimed is:

1. An apparatus, comprising:
a magnetoresistive sensor, comprising:
a synthetic anti-ferromagnetic structure including a ferromagnetic reference layer comprising magnetic material and a grain refining agent, the ferromagnetic reference layer having a grain-refined reference layer surface;
at least one additional layer adjacent the grain-refined reference layer surface,
wherein the reference layer is a laminated structure having a plurality of layers, and wherein a first one of the plurality of layers of the laminated structure comprises the magnetic material with the grain refining agent, and wherein the first one of the plurality of layers with the grain refining agent is a nano-crystalline ferromagnetic layer that comprises cobalt (Co), iron (Fe) and the grain refining agent (R) in ratios of (Co 100-x Fe x ) 100-y R y where x is greater than zero atomic % and less than or equal to 50 atomic %, and y is in the range of 1-9 atomic %;
a seed layer supporting the synthetic anti-ferromagnetic structure; and
a shield layer formed of magnetic material supporting the seed layer,
wherein the shield layer comprises the grain refining agent, and wherein the shield layer that comprises the grain refining agent is an underlying layer that is positioned below the seed layer, and
wherein the shield layer is a laminated structure having a plurality of layers, and wherein a first one of the plurality of layers of the laminated shield layer comprises the grain refining agent and a second one of the plurality of layers of the laminated shield layer has no grain refining agent.

2. The magnetoresistive sensor of claim 1 and wherein the at least one additional layer comprises a thin film stack adjacent the grain-refined reference layer surface, the thin film stack having a stack surface that conforms to the grain-refined reference layer surface.

3. The magnetoresistive sensor of claim 2 and wherein the synthetic anti-ferromagnetic structure further comprises a pinned layer comprising magnetic material.

4. The magnetoresistive sensor of claim 3 and wherein the synthetic anti-ferromagnetic structure further comprises a non-magnetic spacer layer between the pinned layer and the reference layer.

5. The magnetoresistive sensor of claim 3 and wherein the pinned layer further comprises a grain refining agent.

6. The magnetoresistive sensor of claim 5 and further comprising a pinning layer, wherein the seed layer comprises a chemically compatible surface for receiving the pinning layer.

7. The magnetoresistive sensor of claim 6 and wherein the thin film stack comprises a barrier layer with a first barrier layer surface that conforms to the grain-refined reference layer surface.

8. The magnetoresistive sensor of claim 7 and wherein the thin film stack further comprises a first free layer that is adjacent the barrier layer.

9. The magnetoresistive sensor of claim 8 and wherein the first free layer comprises a grain refining agent.

10. The magnetoresistive sensor of claim 8 and wherein the thin film stack further comprises a second free layer that is adjacent the first free layer.

11. The magnetoresistive sensor of claim 10 and wherein a chemical composition of the first free layer is different from a chemical composition of the second free layer.

12. The magnetoresistive sensor of claim 11 and wherein the second free layer comprises a grain refining agent.

13. The magnetoresistive sensor of claim 10 and wherein the thin film stack further comprises a third free layer that is adjacent the second free layer.

14. The magnetoresistive sensor of claim 1 and wherein the grain refining agent comprises Boron.

15. The magnetoresistive sensor of claim 1 and wherein the plurality of layers in the laminated structure further comprises a second layer with no grain refining agent and a third layer with no grain refining agent.

16. An apparatus, comprising:
a magnetoresistive sensor, comprising:
a synthetic anti-ferromagnetic structure including a nano-crystalline ferromagnetic reference layer comprising cobalt (Co), iron (Fe) and boron (B) in ratios (Co 100-x Fe x ) 100-y B y where B is a grain refining agent, x is greater than zero atomic % and less than or equal to 50 atomic %, and y is in the range of 1-9 atomic %, the ferromagnetic reference layer having a grain-refined reference layer surface; and
a thin film stack adjacent the grain-refined reference layer surface, the thin film stack comprises:
a barrier layer with a first barrier layer surface that conforms to the grain-refined reference layer surface;
a free layer structure comprising a plurality of layers with at least one of the plurality of layers comprising a magnetic material and the grain refining agent;

a seed layer supporting the synthetic anti-ferromagnetic structure; and
a shield layer formed of magnetic material supporting the seed layer,
wherein the shield layer comprises the grain refining agent, and wherein the shield layer that comprises the grain refining agent is an underlying layer that is positioned below the seed layer, and
wherein the shield layer is a laminated structure having a plurality of layers, and wherein a first one of the plurality of layers of the laminated shield layer comprises the grain refining agent and a second one of the plurality of layers of the laminated shield layer has no grain refining agent.

17. An apparatus, comprising:
a magnetoresistive sensor, comprising:
a synthetic anti-ferromagnetic structure including a nano-crystalline ferromagnetic reference layer comprising cobalt (Co), iron (Fe) and boron (B) in ratios (Co 100-x Fe x ) 100-y B y where B is a grain refining agent, x is greater than zero atomic % and less than or equal to 50 atomic %, and y is in the range of 1-9 atomic %, the ferromagnetic reference layer having a grain-refined reference layer surface; and
a thin film stack adjacent the grain-refined reference layer surface, the thin film stack having a stack surface that conforms to the grain-refined reference layer surface, the thin film stack comprising a plurality of layers with at least one of the plurality of layers comprising Co, Fe and B;
a seed layer supporting the synthetic anti-ferromagnetic structure; and
a shield layer formed of magnetic material supporting the seed layer,
wherein the shield layer comprises the grain refining agent, and wherein the shield layer that comprises the grain refining agent is an underlying layer that is positioned below the seed layer, and
wherein the shield layer is a laminated structure having a plurality of layers, and wherein a first one of the plurality of layers of the laminated shield layer comprises the grain refining agent and a second one of the plurality of layers of the laminated shield layer has no grain refining agent.

Assignees

• Seagate Technology Llc

Inventors

• Karr Brian William
• Singleton Eric Walter
• He Qing

Classifications

• G11B5/3932

  Magnetic biasing films · CPC title

• G11B5/3912

  Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• B82Y10/00 Primary

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title