Single-crystal diamond and method of manufacturing the same
US-2024175167-A1 · May 30, 2024 · US
Method of preparing polycrystalline diamond
US9630853B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9630853-B2 |
| Application number | US-201514738116-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 12, 2015 |
| Priority date | Feb 6, 2008 |
| Publication date | Apr 25, 2017 |
| Grant date | Apr 25, 2017 |
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Abstract
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An object is to provide polycrystalline diamond applicable to diverse applications; and a water jet orifice, a stylus for gravure printing, a scriber, a diamond cutting tool, and a scribing wheel that include such polycrystalline diamond. This object is achieved by polycrystalline diamond obtained by converting and sintering non-diamond carbon under an ultrahigh pressure and at a high temperature without addition of a sintering aid or a catalyst, wherein sintered diamond grains constituting the polycrystalline diamond have an average grain diameter of more than 50 nm and less than 2500 nm and a purity of 99% or more, and the diamond has a D90 grain diameter of (average grain diameter+average grain diameter×0.9) or less.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a polycrystalline diamond, the method comprising steps of: preparing non-diamond carbon having D90 grain diameter of (average grain diameter+average grain diameter×0.9) or less; and converting and sintering the non-diamond carbon under an ultrahigh pressure and at a high temperature without addition of a sintering aid or a catalyst, wherein: sintered diamond grains constituting the polycrystalline diamond have an average grain diameter of more than 50 nm and less than 2500 nm and a purity of 99% or more, and the sintered diamond grains have a D90 grain diameter of (average grain diameter+average grain diameter×0.9) or less. 2. The method for manufacturing the polycrystalline diamond according to claim 1 , wherein the sintered diamond grains have a D90 grain diameter of (average grain diameter+average grain diameter×0.7) or less. 3. The method for manufacturing the polycrystalline diamond according to claim 1 , wherein the sintered diamond grains have a D90 grain diameter of (average grain diameter+average grain diameter×0.5 ) or less. 4. The method for manufacturing the polycrystalline diamond according to claim 1 , wherein the polycrystalline diamond has a hardness of 100 GPa or more. 5. The method for manufacturing the polycrystalline diamond according to claim 1 , wherein the non-diamond carbon is a carbon material having a graphite-type layer structure.
Assignees
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Classifications
Graphite · CPC title
Monomodal · CPC title
micrometer sized, i.e. from 1 to 100 micron · CPC title
by means of a fluid jet (methods for use of abrasive blasting for cutting B24C1/045; guns for abrasive fluid jets B24C5/02; perforating by non-mechanical means, e.g. by fluid jet B26F1/26) · CPC title
obtained from carbonaceous particles with or without other non-organic components · CPC title
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- What does patent US9630853B2 cover?
- An object is to provide polycrystalline diamond applicable to diverse applications; and a water jet orifice, a stylus for gravure printing, a scriber, a diamond cutting tool, and a scribing wheel that include such polycrystalline diamond. This object is achieved by polycrystalline diamond obtained by converting and sintering non-diamond carbon under an ultrahigh pressure and at a high temperatu…
- Who is the assignee on this patent?
- Sumitomo Electric Industries, Sumitomo Electric Hardmetal Corp
- What technology area does this patent fall under?
- Primary CPC classification C01B32/26. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 25 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).