Semiconductor light device and manufacturing method for the same

Patent metadata

Field	Value
Publication number	US-9627849-B2
Application number	US-201615059304-A
Country	US
Kind code	B2
Filing date	Mar 3, 2016
Priority date	Apr 5, 2011
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

First claim

What is claimed is:

1. A semiconductor laser device, comprising:
a semiconductor substrate having a first conduction type;
a first cladding layer having the first conduction type and deposited above the semiconductor substrate;
an active layer deposited above the first cladding layer;
a second cladding layer having a second conduction type and deposited above the active layer; and
a contact layer deposited on the second cladding layer,
wherein
the active layer includes
a window portion that is disordered via diffusion of vacancies, and
a non-window portion having less disordering than the window portion,

the contact layer has
a first hydrogen concentration in a region corresponding to the non-window portion, and
a second hydrogen concentration in a region corresponding to the window portion,

the first hydrogen concentration is higher than the second hydrogen concentration, and
the first hydrogen concentration in the region corresponding to the non-window portion is greater than 8.0E+16 atoms/cm 3 .

2. The semiconductor laser device according to claim 1 , wherein
the contact layer includes a p-type GaAs layer doped with a p-type dopant.

3. The semiconductor laser device according to claim 2 , wherein
the p-type dopant includes Zn, Mg, Be or carbon.

4. The semiconductor laser device according to claim 2 , wherein
the total doping amount of the p-type dopant in the contact layer is no greater than 1.0E+15 atoms/cm 2 .

Assignees

• Furukawa Electric Co Ltd

Inventors

• Taniguchi Hidehiro
• Ohki Yutaka

Classifications

• H01S5/028

  Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers} · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title

• H01S5/34313

  with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title

• H01L33/005

  Electricity · mapped topic

• H01S5/2072

  obtained by vacancy induced diffusion · CPC title