Light-emitting device and electronic device

Patent metadata

Field	Value
Publication number	US-9627648-B2
Application number	US-201514802642-A
Country	US
Kind code	B2
Filing date	Jul 17, 2015
Priority date	May 9, 2012
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first flexible substrate comprising a first surface and a second surface opposite to and below the first surface;
a transistor over the first surface;
a planarization layer over the transistor;
a light-emitting element over the planarization layer, the light-emitting element being electrically connected to the transistor;
an adhesive layer over the light-emitting element; and
a second flexible substrate over the adhesive layer, the second flexible substrate comprising a third surface and a fourth surface opposite to and over the third surface,
wherein the adhesive layer is in contact with the third surface, and
wherein a first distance from the second surface to a top surface of the planarization layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the top surface of the planarization layer.

2. The light-emitting device according to claim 1 ,
wherein the first distance is 0.9 to 1.1 times as large as the second distance.

3. The light-emitting device according to claim 1 ,
wherein the planarization layer is in contact with the transistor.

4. The light-emitting device according to claim 1 ,
wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a pair of electrodes, and
wherein the light-emitting element is in contact with the planarization layer.

5. An electronic device comprising the light-emitting device according to claim 4 in a display portion.

6. An electronic device comprising the light-emitting device according to claim 1 in a display portion.

7. The light-emitting device according to claim 1 ,
wherein the adhesive layer is in contact with the planarization layer.

8. The light-emitting device according to claim 1 ,
wherein a portion of one of the transistor, the planarization layer, and the light-emitting element is positioned in a neutral plane.

9. A light-emitting device comprising:
a first flexible substrate comprising a first surface and a second surface opposite to and below the first surface;
a transistor over the first surface;
a planarization layer over the transistor;
a light-emitting element over the planarization layer, the light-emitting element being electrically connected to the transistor;
a first protection layer covering the light-emitting element;
a second protection layer over the first protection layer;
an adhesive layer over the light-emitting element; and
a second flexible substrate over the adhesive layer, the second flexible substrate comprising a third surface and a fourth surface opposite to and over the third surface,
wherein a thickness of the first protection layer is greater than or equal to 0.1 μm and less than 100 μm,
wherein a surface of the second protection layer has a higher hardness than a surface of the first protection layer,
wherein the adhesive layer is in contact with the third surface, and
wherein a first distance from the second surface to a top surface of the planarization layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the top surface of the planarization layer.

10. The light-emitting device according to claim 9 ,
wherein the first distance is 0.9 to 1.1 times as large as the second distance.

11. An electronic device comprising the light-emitting device according to claim 9 in a display portion.

12. The light-emitting device according to claim 9 ,
wherein the adhesive layer is in contact with the planarization layer.

13. The light-emitting device according to claim 9 ,
wherein a portion of one of the transistor, the planarization layer, and the light-emitting element is positioned in a neutral plane.

14. A light-emitting device comprising:
a first flexible substrate comprising a first surface and a second surface opposite to and below the first surface;
a transistor over the first surface;
a planarization layer over the transistor;
a light-emitting element over the planarization layer, the light-emitting element being electrically connected to the transistor;
an adhesive layer over the light-emitting element;
a second flexible substrate over the adhesive layer, the second flexible substrate comprising a third surface and a fourth surface opposite to and over the third surface; and
an FPC affixed to the first substrate,
wherein the adhesive layer is in contact with the third surface, and
wherein a first distance from the second surface to a top surface of the planarization layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the top surface of the planarization layer.

15. The light-emitting device according to claim 14 ,
wherein the first distance is 0.9 to 1.1 times as large as the second distance.

16. The light-emitting device according to claim 14 ,
wherein the planarization layer is in contact with the transistor.

17. The light-emitting device according to claim 14 ,
wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a pair of electrodes, and
wherein the light-emitting element is in contact with the planarization layer.

18. An electronic device comprising the light-emitting device according to claim 14 in a display portion.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Eguchi Shingo

Classifications

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K50/30

  Organic light-emitting transistors · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H10K59/8792

  comprising light absorbing layers, e.g. black layers · CPC title

• H10K59/873

  Encapsulations · CPC title