Tetraamino pyrazine based ladder polymer for electroactive applications

Patent metadata

Field	Value
Publication number	US-9627622-B1
Application number	US-201615142290-A
Country	US
Kind code	B1
Filing date	Apr 29, 2016
Priority date	Nov 21, 2011
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

A method for making electronic devices based on derivatized ladder polymer (Pz-BBL) including photovoltaic modules and simple thin film transistors in planar and mechanically flexible and stretchable constructs.

First claim

What is claimed is:

1. A method for making thin film materials, comprising:
dissolving the Pz-BBL in an acid solution;
removing traces of said acid via solvent exposure; and
forming of at least one semiconducting ladder polymer films.

2. The method according to claim 1 , further comprising depositing metal onto said film(s) to act as contacts.

3. The method according to claim 1 , further comprising fabricating said thin film onto plastic and elastomeric substrates for mechanically flexible and stretchable constructs.

4. A photovoltaic device having thin-film material, comprising:
thin film material(s) having at least one substrate;
at least two electrodes having at least one anode and at least one cathode, wherein at least one said electrode is associated with said substrate; and
at least one organic layer having Pz-BBL, wherein said organic layer is associated between at least one said anode and at least one said cathode.

5. The device according to claim 4 , wherein said organic layer comprises at least one semiconducting donor material having Pz-BBL and at least one organic acceptor.

6. The device according to claim 4 , wherein said at least one substrate is selected from the group consisting of silicon, Ge, Quartz wafers, glass, plastics including polyethylene, and elastomerics including polydimethylsiloxanes.

7. The device according to claim 4 , wherein said electrodes comprises highly conductive metals and/or metal oxides are selected from the group consisting of Au, Ag, Al, and indium tin oxide (ITO).

8. The device according to claim 5 , wherein said at least one organic acceptor is selected from the group consisting of polythiophene, MEH-PPV, and like p-type organic polymers.

9. The device according to claim 4 , wherein said film represents a single cell which is either electrically connected in parallel or series to form solar modules.

10. The device according to claim 9 , wherein said modules are electrically connected to form a photovoltaic array/device.

11. A transistor having thin-film material, comprising:
at least one substrate;
at least one gate metal contact;
thin film material(s) having at least one organic semiconducting material layer, wherein at least one said organic semiconducting layer is Pz-BBL, at least one insulator, wherein said gate metal is associated with said insulator, at least one source electrode and at least one drain electrode, wherein said insulator is associated with said source electrode and said insulator is associated with said drain electrode; and
wherein said gate metal is associated with said substrate, wherein said organic semiconducting layer is associated with said source electrode, associated with said drain electrode, and associated with said insulator.

12. The transistor according to claim 11 , wherein said at least one substrate is selected from the group consisting of silicon, Ge, Quartz wafers, degenerately doped silicon wafers, glass, plastics including polyethylene, and elastomerics including polydimethylsiloxanes.

13. The transistor according to claim 11 , wherein said gate metal is selected from the group consisting of Au, Ag, Pt, Pd, and Cu.

14. The transistor according to claim 11 , wherein said gate metal is selected from the group consisting of polymers, degenerately doped silicon wafers, and graphite inks.

15. The transistor according to claim 11 , wherein said insulator is selected from the group consisting of silicon dioxide, silicon nitride, alumina oxide, hafnium oxide, and high-K dielectric materials.

16. The transistor according to claim 11 , wherein said insulator is at least one polymer and/or elastomer selected from the group consisting of epoxies, polyimides, and polydimethylsiloxanes.

17. The transistor according to claim 11 , wherein said source electrode and/or drain electrode are made of materials selected from the group consisting of Au and Ag.

18. The transistor according to claim 11 , wherein said source electrode and/or drain electrode are made of Cu.

19. The transistor according to claim 11 , wherein said source electrode and/or drain electrode are made of materials selected from the group consisting of graphene and carbon nanotubes.

20. A transistor having thin-film material, comprising:
at least one substrate;
at least one gate metal contact, wherein said gate metal is associated with said substrate;
thin film material(s) having at least one insulator, wherein said gate metal is associated with said insulator;
at least one drain electrode;
at least one n-source material to form at least one n-source channel;
at least one p-source material to form at least one p-source channel, wherein said n-source channel and said p-source channel are associated with said drain electrode and with said insulator, wherein said insulator is associated with said source electrode and said insulator is associated with said drain electrode; and
at least one organic semiconducting layer, wherein at least one said organic semiconducting layer is Pz-BBL, wherein said organic semiconducting layer is associated with said n-channel source and said drain, wherein said organic semiconducting layer is associated with said p-channel source and said drain.

21. The transistor according to claim 20 , wherein said at least one substrate is selected from the group consisting of silicon, Ge, Quartz wafers, degenerately doped silicon wafers, glass, plastics including polyethylene, and elastomerics including polydimethylsiloxanes.

22. The transistor according to claim 20 , wherein said gate metal is selected from the group consisting of Au, Ag, Pt, Pd, and Cu.

23. The transistor according to claim 20 , wherein said gate metal is selected from the group consisting of polymers, degenerately doped silicon wafers, and graphite inks.

24. The transistor according to claim 20 , wherein said insulator is selected from the group consisting of silicon dioxide, silicon nitride, alumina oxide, hafnium oxide, and high-K dielectric materials.

25. The transistor according to claim 20 , wherein said insulator is at least one polymer and/or elastomer selected from the group consisting of epoxies, polyimides, and polydimethylsiloxanes.

26. The transistor according to claim 20 , wherein said source electrode and/or drain electrode are made of materials selected from the group consisting of Au and Ag.

27. The transistor according to claim 20 , wherein said source electrode and/or drain electrode are made of Cu.

28. The transistor according to claim 20 , wherein said source electrode and/or drain electrode are made of materials selected from the group consisting of graphene and carbon nanotubes.

29. The transistor according to claim 20 , wherein said p-channel and p-drain are made of materials selected from the group consisting of polythiophene and fullerene (C-60).

Assignees

• Us Navy

Inventors

• Lai William W
• Baca Alfred J

Classifications

• H01L51/055

  Electricity · mapped topic

• H01L51/0558

  Electricity · mapped topic

• H01L51/0002

  Electricity · mapped topic

• H01L51/0096

  Electricity · mapped topic

• H01L51/441

  Electricity · mapped topic