Optoelectronic device comprising nanostructures of hexagonal type crystals

Patent metadata

Field	Value
Publication number	US-9627564-B2
Application number	US-201013821670-A
Country	US
Kind code	B2
Filing date	Sep 9, 2010
Priority date	Sep 9, 2010
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

First claim

The invention claimed is:

1. An optoelectronic device comprising:
a first conductive layer,
a second conductive layer,
an active layer between the first conductive layer and the second conductive layer, wherein
the active layer comprises a plurality of submicrometer size thin films of silicon in layer form having a hexagonal crystal structure, each thin film of silicon in layer form having a hexagonal crystal structure being sandwiched between silicon films with diamond crystalline structure,
each thin film of silicon having a hexagonal crystal structure being stabilized through a permanent constraint exerted on two opposing sides of said thin film by silicon films with diamond crystalline structure, said permanent constraint originating from a lattice mismatch between silicon having a hexagonal crystal structure and the silicon having a diamond crystalline structure, and
the thickness of each thin film of silicon having a hexagonal crystal structure being lower than a critical thickness beyond which the thin film develops dislocations.

2. The optoelectronic device according to claim 1 , wherein at least parts of the submicrometer size layer having a hexagonal crystal structure is under a strain in at least one direction.

3. The optoelectronic device according to claim 1 , wherein the plurality of submicrometer size thin films of silicon having a hexagonal crystal structure corresponding to the active layer has a thickness greater or equal to 10 nm and less than or equal to 1000 nm.

4. The optoelectronic device according to claim 1 , wherein the electronic affinity of the first conductive layer is less than the electronic affinity of the active layer and the ionisation energy of the second conductive layer is greater than the ionisation energy of the active layer.

5. The optoelectronic device according to claim 4 , wherein the optoelectronic device further comprises between the active layer and the first conductive layer a first blocking layer having an electronic affinity substantially equal to the electronic affinity of the active layer and an ionisation energy less than the ionisation energy of the active layer, the optoelectronic device further comprises between the active layer and the second conductive layer a second blocking layer having an electronic affinity greater than the electronic affinity of the active layer and a ionisation energy substantially equal to the ionisation energy of the active layer.

6. The optoelectronic device according to claim 4 , wherein the optoelectronic device is a photovoltaic cell.

7. The optoelectronic device according to claim 4 , wherein the optoelectronic device is a photosensor.

8. The optoelectronic device according to claim 1 , wherein the electronic affinity of the first conductive layer is greater than the electronic affinity of the active layer and the ionisation energy of the second conductive layer is less than the ionisation energy of the active layer.

9. The optoelectronic device according to claim 8 , wherein the optoelectronic device further comprises between the active layer and the first conductive layer a first blocking layer having an electronic affinity substantially equal to the electronic affinity of the first conductive layer and an ionisation energy less than the ionisation energy of the active layer, the optoelectronic device further comprises between the active layer and the second conductive layer a second blocking layer having an electronic affinity greater than the electronic affinity of the active layer and a ionisation energy substantially equal to the ionisation energy of the second conductive layer.

10. The optoelectronic device according to claim 9 , wherein the electronic affinity of the first blocking layer is less than the electronic affinity of the second blocking layer and the ionisation energy of the first blocking layer is less than the ionisation energy of the second blocking layer.

11. The optoelectronic device according to claim 8 , wherein the optoelectronic device is a light-emitting device.

12. The optoelectronic device according to claim 5 , wherein the first and/or second blocking layers are non-doped semiconductor or insulators layers.

13. The optoelectronic device according to claim 9 , wherein the first and/or second blocking layers are non-doped semiconductor or insulators layers.

Assignees

• Guillemoles Jean-Francois
• Olsson Par
• Vidal Julien
• Freundlich Alexandre
• Electricite De France
• Centre Nat De La Rech Scient (Cnrs)
• Univ Houston

Inventors

• Guillemoles Jean-Francois
• Olsson Par
• Vidal Julien
• Freundlich Alexandre

Classifications

• H01L33/18

  Electricity · mapped topic

• H01L33/34

  Electricity · mapped topic

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H01L31/028

  Electricity · mapped topic

• Y02E10/546

  Polycrystalline silicon PV cells · CPC title