Display device having sealing material

Patent metadata

Field	Value
Publication number	US-9627459-B2
Application number	US-201615091643-A
Country	US
Kind code	B2
Filing date	Apr 6, 2016
Priority date	Jan 24, 2002
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator ( 24 ) provided between pixel electrodes, an auxiliary electrode ( 21 ) made of a metal film is formed, whereby a conductive layer ( 20 ) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode ( 21 ) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film ( 32 ) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

First claim

What is claimed is:

1. A display device comprising:
a pixel portion comprising a first transistor and a light emitting element electrically connected to the first transistor, the light emitting element comprising an anode, an organic compound layer over the anode, and a cathode over the organic compound layer;
a driver circuit comprising a second transistor;
a first organic insulating layer over and in contact with a source electrode or a drain electrode of the second transistor, the first organic insulating layer comprising an opening;
a first insulating layer over the first organic insulating layer, the first insulating layer overlapping a side surface of the opening; and
a sealing material over and in contact with the first insulating layer, the sealing material being in the opening,
wherein the sealing material overlaps a channel of the second transistor, and
wherein the first insulating layer is in contact with the cathode.

2. The display device according to claim 1 , wherein the first transistor and the second transistor are over a flexible substrate.

3. The display device according to claim 1 , wherein the first transistor comprises a semiconductor film comprising polysilicon.

4. The display device according to claim 1 , wherein the cathode comprises magnesium and the anode comprises indium tin oxide.

5. The display device according to claim 1 , wherein the source electrode or the drain electrode of the second transistor comprises at least one of aluminum and titanium.

6. The display device according to claim 1 , wherein the cathode is over the first insulating layer.

7. A display device comprising:
a pixel portion comprising a first transistor and a light emitting element electrically connected to the first transistor, the light emitting element comprising an anode, an organic compound layer over the anode, and a cathode over the organic compound layer;
a driver circuit comprising a second transistor;
a first organic insulating layer over and in contact with a source electrode or a drain electrode of the second transistor, the first organic insulating layer comprising an opening;
a second organic insulating layer over and in contact with the first organic insulating layer, the second organic insulating layer overlapping an end portion of the anode;
a first insulating layer over the first organic insulating layer and the second organic insulating layer, the first insulating layer overlapping a side surface of the opening; and
a sealing material over and in contact with the first insulating layer, the sealing material being in the opening,
wherein the sealing material overlaps a channel of the second transistor, and
wherein the first insulating layer is in contact with the cathode.

8. The display device according to claim 7 , wherein the second organic insulating layer functions as a bank.

9. The display device according to claim 7 , wherein an end portion of the organic compound layer is over the second organic insulating layer.

10. The display device according to claim 7 , wherein the opening does not overlap the second organic insulating layer.

11. The display device according to claim 7 , wherein the first transistor and the second transistor are over a flexible substrate.

12. The display device according to claim 7 , wherein the first transistor comprises a semiconductor film comprising polysilicon.

13. The display device according to claim 7 , wherein the cathode comprises magnesium and the anode comprises indium tin oxide.

14. The display device according to claim 7 , wherein the source electrode or the drain electrode of the second transistor comprises at least one of aluminum and titanium.

15. The display device according to claim 7 , wherein the cathode is over the first insulating layer.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Hiroki Masaaki
• Murakami Masakazu
• Kuwabara Hideaki

Classifications

• Y10S257/929

  PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer, e.g. diffused from both surfaces of epitaxial layer · CPC title

• H10K59/873

  Encapsulations · CPC title

• H10K59/80522

  combined with auxiliary electrodes · CPC title

• H10K59/80516

  combined with auxiliary electrodes, e.g. ITO layer combined with metal lines · CPC title

• H10K59/123

  Connection of the pixel electrodes to the thin film transistors [TFT] · CPC title