Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus

Patent metadata

Field	Value
Publication number	US-9627347-B2
Application number	US-201314428635-A
Country	US
Kind code	B2
Filing date	Aug 29, 2013
Priority date	Sep 24, 2012
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

A method of manufacturing a semiconductor device according to the present invention comprises:
a bump forming step of forming a bump electrode 100 on a semiconductor chip 1 , the bump electrode 100 protruding in a substantially conical shape; a pad forming step of forming a pad electrode 200 on a substrate 10 , the pad electrode 200 having a recess 210 with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape; a pressing step of pressing the bump electrode 100 and the pad electrode 200 in a direction which brings them closer to each other, with the bump electrode 100 being inserted in the recess 210 so that the central axis of the bump electrode 100 and the central axis of the recess 210 coincide with each other; and an ultrasonic joining step of joining the bump electrode 100 and the pad electrode 200 by vibrating at least one of the bump electrode 100 and the pad electrode 200 using ultrasonic waves.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device which is formed by connecting a semiconductor chip and a substrate or connecting semiconductor chips, the method comprising:
a bump forming step of forming a first electrode on one semiconductor chip or substrate, the first electrode protruding in a substantially conical shape;
a pad forming step of forming a second electrode on the other semiconductor chip or substrate, the second electrode having a recess with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape;
a pressing step of pressing the first electrode and the second electrode in a direction which brings them closer to each other, with the first electrode being inserted in the recess of the second electrode so that a central axis of the first electrode and a central axis of the recess coincide with each other; and
an ultrasonic joining step of joining the first electrode and the second electrode by vibrating at least one of the first electrode and the second electrode using ultrasonic waves, wherein:
a first flat surface is formed at a tip end of the first electrode; and
a first angle formed by a lateral surface of the first electrode relative to the central axis of the first electrode is smaller than a second angle formed by an inner lateral surface of the recess relative to the central axis of the recess of the second electrode.

2. The method according to claim 1 , wherein a second flat surface is formed at a bottom of the second electrode.

3. The method according to claim 2 , wherein a diameter of a circle inscribed with a circumference of the second flat surface is smaller than a diameter of a circumference of the first flat surface.

4. The method according to claim 1 , wherein at least surfaces of the first electrode and the second electrode are formed of gold.

5. The method according to claim 4 , wherein the first electrode and the second electrode are formed of copper whose surface is coated with gold.

6. The method according to claim 1 , wherein at least surfaces of the first electrode and the second electrode are formed of copper.

7. The method according to claim 1 , wherein a circumference of a tip end of the first electrode is chamfered.

8. The method according to claim 1 , wherein the second electrode formed in the pad forming step is formed so as to protrude from a flat surface of the semiconductor chip or the substrate.

9. A method of manufacturing a semiconductor device which is formed by connecting a semiconductor chip and a substrate or connecting semiconductor chips, the method comprising:
a bump forming step of forming a first electrode on one semiconductor chip or substrate, the first electrode protruding in a substantially conical shape;
a pad forming step of forming a second electrode on the other semiconductor chip or substrate, the second electrode having a recess with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape;
a pressing step of pressing the first electrode and the second electrode in a direction which brings them closer to each other, with the first electrode being inserted in the recess of the second electrode so that a central axis of the first electrode and a central axis of the recess coincide with each other; and
an ultrasonic joining step of joining the first electrode and the second electrode by vibrating at least one of the first electrode and the second electrode using ultrasonic waves, wherein:
a first angle formed by a lateral surface of the first electrode relative to the central axis of the first electrode is smaller than a second angle formed by an inner lateral surface of the recess relative to the central axis of the recess of the second electrode.

10. The method according to claim 9 , wherein at least surfaces of the first electrode and the second electrode are formed of gold.

11. The method according to claim 10 , wherein the first electrode and the second electrode are formed of copper whose surface is coated with gold.

12. The method according to claim 9 , wherein at least surfaces of the first electrode and the second electrode are formed of copper.

13. The method according to claim 9 , wherein a circumference of a tip end of the first electrode is chamfered.

14. The method according to claim 9 , wherein the second electrode formed in the pad forming step is formed so as to protrude from a flat surface of the semiconductor chip or the substrate.

Assignees

• Nat Inst Advanced Ind Science & Tech

Inventors

• Aoyagi Masahiro
• Bui Thanh Tung
• Suzuki Motohiro
• Watanabe Naoya
• Kato Fumiki
• Ma Lai Na
• Nemoto Shunsuke

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W80/314

  characterized by direct bonding of pads or other interconnections · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/07233

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title

• H10W72/07227

  involving guiding structures, e.g. spacers or supporting members · CPC title