NAND flash memory device

Patent metadata

Field	Value
Publication number	US-9627082-B2
Application number	US-201615065068-A
Country	US
Kind code	B2
Filing date	Mar 9, 2016
Priority date	Mar 13, 2013
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.

First claim

The invention claimed is:

1. A NAND flash memory device comprising:
an interface;
a NAND flash memory array;
a page buffer coupled to the NAND flash memory array;
a control logic coupled to the NAND flash memory array and the page buffer for providing, from the NAND flash memory device via the interface and the page buffer, in response to a read command, a continuous data output across page boundaries and from logically contiguous memory locations without wait intervals; and
a power-up detector for initiating loading of a default page of the NAND flash memory array to the page buffer upon power-up.

2. The NAND flash memory device of claim 1 further comprising a buffer mode flag, wherein the power-up detector sets the buffer mode flag into a continuous page read mode upon power-up.

3. The NAND flash memory device of claim 2 wherein the interface comprises a single-bit and multiple-bit SPI interface.

4. The NAND flash memory device of claim 1 further comprising a package selected from a group consisting of an 8-pin WSON package, a 24-pin FBGA package, an 8-pin SOIC package, and a 16-pin SOIC package, wherein at least some of the pins of the package are active pins of an SPI interface, and the NAND flash memory array and the control logic are contained in the package.

5. The NAND flash memory device of claim 4 wherein the package comprises a pinout that is the same as a pinout of a corresponding type of package for a high-performance serial flash NOR (“HPSF-NOR”) memory.

6. The serial NAND flash memory of claim 4 wherein the package has a footprint of 48 millimeters squared or less.

7. The NAND flash memory device of claim 1 wherein the read command corresponds to a high-performance serial flash NOR (“HPSF-NOR”) read command, the control logic further being clock-compatible with the HPSF-NOR read command.

8. The NAND flash memory device of claim 1 further comprising a package having a footprint of 48 millimeters squared or less, and an active SPI interface of from four to six pins, wherein the NAND flash memory array and the control logic are contained in the package.

9. The NAND flash memory device of claim 8 wherein the package comprises a pinout that is the same as a pinout of a corresponding type of package for a high-performance serial flash NOR (“HPSF-NOR”) memory.

10. The NAND flash memory device of claim 8 wherein the package is an eight pin WSON package.

11. The NAND flash memory device of claim 8 wherein the package is a twenty-four pin FBGA package.

12. The NAND flash memory device of claim 1 wherein the page buffer is a ping-pong buffer.

Assignees

• Winbond Electronics Corp

Inventors

• Jigour Robin John
• Chen Hui
• Michael Oron

Classifications

• G11C2029/0411

  Online error correction · CPC title

• G06F11/1068 Primary

  in sector programmable memories, e.g. flash disk (G06F11/1072 takes precedence) · CPC title

• G11C16/20

  Initialising; Data preset; Chip identification · CPC title

• G11C16/3404

  Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells · CPC title

• G11C16/26 Primary

  Sensing or reading circuits; Data output circuits · CPC title