Block copolymer self-assembly for pattern density multiplication and rectification

Patent metadata

Field	Value
Publication number	US-9626996-B2
Application number	US-201514588865-A
Country	US
Kind code	B2
Filing date	Jan 2, 2015
Priority date	Dec 28, 2010
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.

First claim

What is claimed is:

1. A method, comprising:
a) lithographically transferring an initial pattern of an initial template to a substrate;
b) applying a layer of block copolymer to the substrate after the transferring of the initial pattern, and performing block copolymer self-assembly of the layer of block copolymer with a density multiplication factor k;
c) creating a subsequent pattern by removing a block from the layer of block copolymer after self-assembly for a subsequent template with the density multiplication factor k;
d) determining whether or not the subsequent pattern meets a design specification; and
e) repeating steps a)-d) with the subsequent template as the initial template until the subsequent pattern meets the design specification.

2. The method of claim 1 ,
wherein the design specification comprises a pattern density specification and a pattern quality specification with respect to missing pattern features and deformed pattern features.

3. The method of claim 1 ,
wherein removing the block comprises
exposing the layer of block copolymer to ultraviolet light followed by acetic acid or
dry etching the layer of block copolymer with oxygen.

4. The method of claim 3 , further comprising:
depositing a mask over the substrate and another block of the layer of block copolymer,
wherein the mask comprises chromium, tantalum, aluminum, or carbon, and
wherein the mask has a thickness ranging from about 3 nm to about 10 nm.

5. The method of claim 4 , further comprising:
removing the mask from the another block by reactive ion etching with chlorine, and
removing the mask from sidewalls of the another block by high-angle ion milling.

6. The method of claim 5 , further comprising:
removing the another block of the annealed block copolymer film,
wherein removing the another block comprises a dry etching process with oxygen.

7. A method, comprising:
performing block copolymer self-assembly over a substrate with a density multiplication factor k, wherein the substrate includes an initial pattern;
creating a subsequent pattern for a subsequent template with the density multiplication factor k;
determining whether the subsequent pattern meets a design specification with respect to pattern density and pattern quality;
if the subsequent pattern does not meet the design specification, performing another block copolymer self-assembly over the subsequent template with the density multiplication factor k, wherein the subsequent template includes the subsequent pattern;
creating another subsequent pattern for another subsequent template with the density multiplication factor k; and
determining whether the another subsequent pattern meets the design specification with respect to the pattern density and the pattern quality.

8. The method of claim 7 , further comprising
spin-coating a block copolymer film over the substrate.

9. The method of claim 8 ,
wherein a block copolymer of the block copolymer film is selected from the group consisting of polystyrene-block-poly(methyl methacrylate), polystyrene-block-poly(2-vinylpyridine), polystyrene-block-poly(4-vinylpyridine), polystyrene-block-poly(ethylene oxide), polystyrene-block-polyisoprene, polystyrene-block-polybutadiene, polystyrene-block-poly(dimethylsiloxane), polyisoprene-block-poly(dimethylsiloxane), polyisobutylene-block-poly(dimethylsiloxane), poly(methyl methacrylate)-block-poly(dimethylsiloxane), and polystyrene-block-poly(ferrocenylsilane).

10. The method of claim 8 ,
wherein the annealed block copolymer film has a thickness ranging from about 30 nm to about 70 nm.

11. A method, comprising:
performing a block copolymer self-assembly of an initial template by annealing a block copolymer film over an initial resist pattern on a substrate with a density multiplication factor k;
creating a subsequent pattern for a subsequent template with the density multiplication factor k; and
repeating the performing and the creating with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.

12. The method of claim 11 , further comprising:
creating the initial resist pattern using deep ultraviolet lithography, extreme ultraviolet lithography, electron-beam lithography, imprint lithography, or a combination thereof.

13. The method of claim 12 ,
wherein the initial resist pattern is about 250 Gdpsi.

14. The method of claim 11 , further comprising:
removing a first block of the block copolymer film subsequent to the annealing, and
depositing a mask over the substrate and a second block of the block copolymer film.

15. The method of claim 14 , further comprising:
removing the mask over the second block, and
removing the second block,
wherein the removing the mask and the removing the second block comprises dry lift-off processes.

16. The method of claim 11 , further comprising:
inspecting the subsequent pattern prior to the repeating to determine whether or not the subsequent pattern meets the design specification.

17. The method of claim 11 ,
wherein k=1 for pattern rectification, and
wherein k≧2 for pattern density multiplication.

18. The method of claim 11 ,
wherein k=1 for pattern rectification, and
wherein k≧3 for pattern density multiplication.

19. The method of claim 11 ,
wherein the initial resist pattern is about 250 Gdpsi,
wherein k≧2 for pattern density multiplication, and
wherein the subsequent pattern is about 1 Tdpsi.

Assignees

• Seagate Technology Llc
• Seagate Technology Llc

Inventors

• Yang Xiaomin
• Yu Zhaoning
• Lee Kim Yang
• Feldbaum Michael
• Hsu Yautzong
• Hu Wei
• Xiao Shuaigang
• Yang Henry
• Wang Hongying
• Van De Veerdonk Rene Johannes Marinus
• Kuo David

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title

• B32B27/308

  comprising acrylic (co)polymers · CPC title

• G03F7/0035

  Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface · CPC title