Multi-Beam Probes with Decoupled Structural and Current Carrying Beams and Methods of Making
US-2024094259-A1 · Mar 21, 2024 · US
US9625492B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9625492-B2 |
| Application number | US-201113883698-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2011 |
| Priority date | Nov 19, 2010 |
| Publication date | Apr 18, 2017 |
| Grant date | Apr 18, 2017 |
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Official abstract text for this publication.
The present invention provides a contact probe pin in which a carbon film having both of conductivity and durability is formed on a base material with a tip divided, wherein Sn adherence can be reduced as much as possible to be able to maintain stable electrical contact over a long period of time, even under such circumstances that the temperature of a usage environment becomes high. The present invention relates to a contact probe pin, including a tip divided into 2 or more projections and repeatedly coming into contact with a test surface at the projection, wherein a carbon film containing a metal element is formed at least on a surface of the projection, and a radius of curvature at an apex part of the projection is 30 μm or more.
Opening claim text (preview).
The invention claimed is: 1. A method for measuring electrical property of a semiconductor element, the method comprising: contacting a contact probe pin with a test surface of the semiconductor element, wherein the contact probe pin comprises a tip divided into two or more projections each having an apex part with an apical radius of curvature of 30 μm or more and 100 μm or less, at least a surface of each said projection is coated with a film comprising carbon and a metal element, and a contact angle between contacted surfaces is 45° or less when said contacting between the apex part of each projection and the test surface occurs while a load of from 5 to 40 g is applied. 2. The method of claim 1 , wherein said contacting occurs at a temperature of at least 85° C. 3. The method of claim 1 , wherein said contacting occurs at a temperature of at least 90° C. 4. The method of claim 1 , wherein said contacting occurs at a temperature of 130° C. 5. The method of claim 1 , wherein the test surface comprises Sn. 6. The method of claim 1 , wherein the tip is divided into three projections. 7. The method of claim 1 , wherein the tip is divided into four to eight projections. 8. The method of claim 1 , wherein the apical radius of curvature is from 30 μm to 50 μm. 9. The method of claim 1 , wherein the apical radius of curvature is from 50 μm to 100 μm. 10. The method of claim 1 , wherein said film has a metal content ranging from 5 to 30 atomic %. 11. The method of claim 1 , wherein the metal element is at least one selected from the group consisting of W, Ta, Mo, Nb, Ti and Cr. 12. The method of claim 1 , wherein said film comprises an elemental metal mixed with carbon. 13. The method of claim 1 , wherein said film comprises a metal carbide. 14. The method of claim 1 , wherein said film comprises tungsten or tungsten carbide. 15. The method of claim 1 , wherein said film is at east 0.1 μm thick. 16. The method of claim 1 , wherein said film has a thickness of from 0.1 μm to 5 μm.
related to layers · CPC title
characterised by the material, e.g. plating, or coating materials · CPC title
related to tip portion · CPC title
Measuring probes · CPC title
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