Plasma spectrometer
US-9222890-B2 · Dec 29, 2015 · US
US9625319B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9625319-B2 |
| Application number | US-201514632107-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 26, 2015 |
| Priority date | Feb 28, 2014 |
| Publication date | Apr 18, 2017 |
| Grant date | Apr 18, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A chip for plasma generation, a plasma generator, and a plasma spectrometry method are described, having high reproducibility of plasma light emission without a requirement of a discharge unit for removing air bubbles, wherein the chip includes a channel comprising a first region, a narrow portion, and a second region, where the narrow portion is in communication with the first region and the second region and has a cross-sectional area smaller than the first region and the second region.
Opening claim text (preview).
The invention claimed is: 1. A plasma generator comprising: a chip for plasma generation, comprising: a channel, wherein the channel has a first region, a narrow portion, and a second region, the narrow portion is in communication with the first region and the second region and has a cross-sectional area smaller than the first region and the second region, and the inner wall of the first region has a grooved portion with a longitudinal direction along the direction from the first region toward the second region; a first reservoir and a second reservoir, for preserving a conductive solution, wherein one end of the first region is in communication with the narrow portion, and the other end of the first region is in communication with the first reservoir, and one end of the second region is in communication with the narrow portion, and the other end of the second region is in communication with the second reservoir; a cathode, wherein the cathode is an electrode directly fixed to the inner walls of the first region and the first reservoir and directly fixed to the outer walls of the first region and the first reservoir; an anode, wherein the anode is an electrode directly fixed to the inner walls of the second region and the second reservoir and directly fixed to the outer walls of the second region and the second reservoir; a voltage application unit; and a detection unit configured to detect plasma light emission generated in the chip. 2. The chip according to claim 1 , wherein the cathode is arranged inside the grooved portion of the first region. 3. The chip according to claim 1 , wherein the cathode is an electrode formed by coating the inner wall of the first region with a conductive material. 4. The chip according to claim 1 , wherein the inner wall of the channel, having the cathode fixed thereon is the inner wall of the grooved portion in the channel. 5. The chip according to claim 1 , wherein the cathode is an electrode formed by burying a conductive material in the inner wall of the first region. 6. The chip according to claim 5 , wherein the inner wall of the channel, having the cathode fixed thereon is the inner wall of the grooved portion in the channel. 7. The chip according to claim 1 , wherein the anode is arranged on a side opposite to the cathode across the narrow portion. 8. The chip according to claim 7 , wherein the anode is arranged inside the second region. 9. The chip according to claim 7 , wherein the anode is fixed to the inner wall of the second region. 10. The chip according to claim 7 , wherein the anode is an electrode formed by coating the inner wall of the second region with a conductive material. 11. The chip according to claim 7 , wherein the anode is an electrode formed by burying a conductive material in the inner wall of the second region. 12. The plasma generator according to claim 1 , wherein the plasma light emission is generated in the narrow portion of the channel in the chip. 13. A plasma spectrometry method comprising: generating an electric field in a channel containing a conductive solution supplied therein; and detecting plasma light emission generated in the channel by the generation of the electric field, wherein the channel has a first region, a narrow portion, and a second region, the narrow portion is in communication with the first region and the second region and has a cross-sectional area smaller than the first region and the second region, and at least one of the inner walls of the first region and the second region has a grooved portion, and an anode and a cathode are arranged so that the narrow portion is positioned between the anode and the cathode, wherein the cathode is an electrode directly fixed to the inner walls of the first region and a first reservoir and directly fixed to the outer walls of the first region and a first reservoir, and the anode is an electrode directly fixed to the inner walls of the second region and a second reservoir and directly fixed to the outer walls of the second region and a second reservoir. 14. The plasma spectrometry method according to claim 13 , wherein in the detection step, plasma light emission is generated in the narrow portion.
using an arc (H05H1/26 takes precedence) · CPC title
Control circuits therefor · CPC title
using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title
Emission spectrometry · CPC title
using electric arcs or discharges · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.