Phosphor, production method for the same, and light-emitting device

Patent metadata

Field	Value
Publication number	US-9624428-B2
Application number	US-201213983756-A
Country	US
Kind code	B2
Filing date	Feb 3, 2012
Priority date	Feb 6, 2011
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

A phosphor indicated by general formula Me a Re b Si c Al d N e O f . In the formula: Me has Sr as an essential element thereof and can include one or more types of element selected from Na, Li, Mg, Ca, Ba, Sc, Y, and La; and Re has Eu as an essential element thereof and can include one or more types of element selected from Mn, Ce, Tb, Yb, and Sm. In addition, when a=1−x, b=x, c=(2+2p)×(1−y), d=(2+2p)×y, e=(1+4p)×(1−z), and f=(1+4p)×z, parameters p, x, y, and z fulfill the following: 1.620<p<1.635, 0.005<x<0.300, 0.200<y<0.250, and 0.070<z<0.110. A light-emitting device with high luminance is provided by using this phosphor.

First claim

What is claimed is:

1. A phosphor represented by general formula Me a Re b Si c Al d N e O f (Me contains Sr as an essential element and may contain one or more elements selected from Na, Li, Mg, Ca, Ba, Sc, Y, and La; and Re contains Eu as an essential element and may contain one or more elements selected from Mn, Ce, Tb, Yb, and Sm), wherein when a, b, c, d, e, and f representing composition ratio satisfy the following formulae:
a= 1− x,

b=x,
c =(2+2 p )×(1− y ),

d =(2+2 p )× y,

e =(1+4 p )×(1− z ), and

f =(1+4 p )× z,

parameters p, x, y, and z fall within the following range:
1.620<p<1.635,
0.005<x<0.300,
0.200<y<0.250, and
0.070<z<0.110, and wherein
the phosphor is excited by light having wavelengths falling within a range from 300 nm to 500 nm and has emission peak wavelengths falling within a range from 495 nm to 530 nm.

2. The phosphor as set forth in claim 1 , wherein c, d, e, and f representing composition ratio fall within the following range:
0.250<d/c<0.320, and
0.080<f/e<0.200.

3. The phosphor as set forth in claim 1 , wherein Me consists only of Sr.

4. The phosphor as set forth in claim 1 , wherein Re consists only of Eu.

5. The phosphor as set forth in claim 1 , wherein p=1.625.

6. The phosphor as set forth in claim 5 , wherein x=0.014, y=0.214 or 0.238 and z=0.083 or 0.100.

7. The phosphor as set forth in claim 1 , the phosphor is described by a crystal structure model represented as (Me 1−x Re x M 2 X) m (M 2 X 4 ) n (m and n are integers satisfying the relation 1.620<n/m<1.635, m=8 and n=13; Me contains Sr as an essential element and may contain one or more type of elements selected from Na, Li, Mg, Ca, Ba, Sc, Y, and La; Re contains Eu as an essential element and may contain one or more elements selected from Mn, Ce, Tb, Yb, and Sm; M is one or more elements selected from Si and Al; and X is one or more elements selected from O and N).

8. A method for producing the phosphor as set forth in claim 1 , comprising, a mixing process for mixing raw materials; and a burning process for burning a mixture having undergone the mixing process, wherein the raw materials are:
(1) one or more compounds selected from nitrides, carbides, hydrides, silicides, carbonates, and oxides of elements represented as Me (Me contains Sr as an essential element, and may contain one or more elements selected from Na, Li, Mg, Ca, Ba, Sc, Y, and La),
(2) one or more compounds selected from nitrides, hydrides, carbides, halides, and oxides of elements represented as Re (Re contains Eu as an essential element, and may contain one or more elements selected from Mn, Ce, Tb, Yb, and Sm),
(3) one or more compounds selected from silicon nitride, silicon oxide, silicon oxynitride, and silicon metal, and
(4) one or more compounds selected from aluminum nitride, aluminum oxide, aluminum oxynitride, and aluminum metal.

9. The method for producing the phosphor as set forth in claim 8 , wherein the burning process is performed under ambient pressure of 0.1 MPa or higher and at temperatures falling within a range from 1600° C. to 2000° C.

10. The method for producing the phosphor as set forth in claim 8 , further comprising an annealing process where the phosphor having undergone the burning process is annealed at temperatures falling within a range from 1200° C. to 1900° C.

11. The method for producing the phosphor as set forth in claim 8 , wherein the raw materials in the mixing process contain the phosphor obtained in the burning process.

12. A light-emitting device comprising: a light-emitting element; and
the phosphor as set forth in any one of claim 1 .

13. The light-emitting device as set forth in claim 12 , further comprising one or more types of phosphors having emission peak wavelengths longer than those of the phosphors as set forth in claim 1 .

14. The light-emitting device as set forth in claim 12 , wherein the light-emitting element is either inorganic or organic light-emitting element that emits light having wavelengths falling within a range from 340 nm to 500 nm.

15. The light-emitting device as set forth in claim 12 , the light-emitting device is a backlight for LC TVs, light-source system for projectors, lighting system, or signaling device.

16. A phosphor represented by general formula Me a Re b Si c Al d N e O f (Me is Sr; and Re is Eu), wherein when a, b, c, d, e, and f representing composition ratio satisfy the following formulae:
a= 1− x,

b=x,
c =(2+2 p )×(1− y ),

d =(2+2 p )× y,

e =(1+4 p )×(1− z ), and

f =(1+4 p )× z,

parameters p, x, y, and z fall within the following range:
1.620<p<1.635,
0.005<x<0.300,
0.200<y<0.250, and
0.070<z<0.110, wherein
the phosphor is described by a crystal structure model represented as (Me 1−x Re x M 2 X) m (M 2 X 4 ) n (m and n are integers satisfying the relation 1.620<n/m<1.635, m=8 and n=13; M is one or more elements selected from Si and Al; and X is one or more elements selected from O and N), and wherein
the phosphor is excited by light having wavelengths falling within a range from 300 nm to 500 nm and has emission peak wavelengths falling within a range from 495 nm to 530 nm.

17. The phosphor as set forth in claim 16 , wherein c, d, e, and f representing composition ratio fall within the following range:
0.250<d/c<0.320, and
0.080<f/e<0.200.

18. The phosphor as set forth in claim 16 , wherein n/m=1.625, x=0.014, y=0.214 or 0.238 and z=0.083 or 0.100.

19. A method for producing the phosphor as set forth in claim 16 , comprising, a mixing process for mixing raw materials; and a burning process for burning a mixture having undergone the mixing process, wherein the raw materials are:
(1) one or more compounds selected from nitrides, carbides, hydrides, silicides, carbonates, and oxides of Sr,
(2) one or more compounds selected from nitrides, hydrides, carbides, halides, and oxides of Eu,
(3) one or more compounds selected from silicon nitride, silicon oxide, silicon oxynitride, and silicon metal, and
(4) one or more compounds selected from aluminum nitride, aluminum oxide, aluminum oxynitride, and aluminum metal.

20. The method for producing the phosphor as set forth in claim 19 , wherein the burning process is performed under ambient pressure of 0.1 MPa or higher and at temperatures falling within a range from 1600° C. to 2000° C.

21. The method for producing the phosphor as set forth in claim 19 , further comprising an annealing process where the phosphor having undergone the burning process is annealed at temperatures falling within a range from 1200° C. to 1900° C.

22. The method for producing the phosphor as set forth in claim 19 , wherein the raw materials in the mixing process contain the phosphor obtained in the burning process.

23. A light-emitting device comprising:
a light-emitting element; and
the phosphor as set forth in claim 16 .

24. The light-emitting device as set forth in claim 23 , further comprising one or more types of phosphors having emission peak wavelengths longer than those of the phosphors as set forth in claim 16 .

25. The light-emitting device as set forth in claim 23 , wherein the light-emitting element is either inorganic or organic light-emitting element that emits light having wavelengths falling within a range from 340 nm to 500 nm.

26. The light-emitting device as set forth in claim 23 , the ligh

Assignees

• Hirosaki Naoto
• Yoshimatsu Ryo
• Watanabe Shintaro
• Nat Inst For Materials Science
• Denka Company Ltd

Inventors

• Hirosaki Naoto
• Yoshimatsu Ryo
• Watanabe Shintaro

Classifications

• G02F1/133602

  Direct backlight · CPC title

• F21V9/30

  Elements containing photoluminescent material distinct from or spaced from the light source (shades F21V1/17; globes, bowls or cover glasses F21V3/08, F21V3/12; refractors F21V5/10; reflectors F21V7/26, F21V7/30; elements with provision for controlling the spectral properties or intensity F21V9/40) · CPC title

• C09K11/77928

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/77348 Primary

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/0883

  Arsenides; Nitrides; Phosphides · CPC title